Kazuki Nomoto
Cornell University
H-index: 33
North America-United States
Top articles of Kazuki Nomoto
Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy
Journal of Vacuum Science & Technology A
2024/5/1
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same
2024/2/6
Erratum:“Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy”[APL Mater. 11, 111113 (2023)]
APL Materials
2024/1/1
Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
APL Materials
2023/11/1
AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality
2023/10/16
Vertical gallium oxide (ga2o3) power fets
2023/10/12
Ultrafast spectral diffusion of GaN defect single photon emitters
Applied Physics Letters
2023/10/1
Kazuki Nomoto
H-Index: 22
2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC
physica status solidi (a)
2023/8
Bottom tunnel junction light-emitting field-effect transistors
2023/6/22
15-ghz epitaxial aln fbars on sic substrates
IEEE Electron Device Letters
2023/4/20
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Applied Physics Letters
2023/2/27
Electric field induced migration of native point defects in Ga2O3 devices
Journal of Applied Physics
2023/1/21
Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs)
2023
Chip-Scale Electron Spin Resonance Spectroscopy of Spin-Active Defects in Epitaxial β-Ga2O3
APS March Meeting Abstracts
2023
Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties
Applied Physics Letters
2022/4/11
Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV
Applied Physics Letters
2022/3/21
Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy
AIP Advances
2022/3/1
Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation
physica status solidi (a)
2022/3
Robert Cooper
H-Index: 2
Kazuki Nomoto
H-Index: 22
Wenshen Li
H-Index: 14
Debdeep Jena
H-Index: 63
Huili Grace Xing
H-Index: 54
Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures
Applied Physics Letters
2022/1/3
Cavity optimization for AlGaN heterostructure deep-ultraviolet lasers
APS March Meeting Abstracts
2022
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