Patrick Fay
University of Notre Dame
H-index: 50
North America-United States
Top articles of Patrick Fay
Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes
Applied Physics Letters
2024/4/22
Electric field control and exploitation in III-N devices
2024/3/8
Patrick Fay
H-Index: 30
Yu Duan
H-Index: 5
Wet etch methods to achieve submicron active area self-aligned vertical Sb-heterostructure backward diodes
Materials Science in Semiconductor Processing
2024/3/1
Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications
physica status solidi (a)
2024/1/15
Low-Loss D-Band SIW Power Divider for Integrated Systems
2024/1/9
High-power density W-band MMIC amplifiers using graded-channel GaN HEMTs
2023/6/11
Broadband THz Switching with Extremely Low Insertion Loss and Superior Isolation
2023/6/11
Ion-implanted triple-zone graded junction termination extension for vertical GaN pn diodes
Applied Physics Letters
2023/5/22
Yu Duan
H-Index: 5
Patrick Fay
H-Index: 30
Performance Improvement of GaN HEMT with Ferroelectric Gate Stacks for RF/mm-Wave Switching Applications
2023/4/17
Patrick Fay
H-Index: 30
Integration of ferroelectrics with III-N transistors for high performance millimeter-wave applications
2023/3/15
Yu Cao
H-Index: 27
Patrick Fay
H-Index: 30
Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
2023/3/15
Core-shell nanofin vertical switch and high-voltage switching
2023/3/2
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Applied Physics Letters
2023/2/27
Polarization-Resolved THz Imaging with Orthogonal Heterostructure Backward Diode Detectors
IEEE Transactions on Terahertz Science and Technology
2023/2/3
Extraordinary Permittivity Characterization Using 4H-SiC Substrate-Integrated-Waveguide Resonators
2023/1/22
A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs
IEEE Journal of Microwaves
2023/12/18
Lei Li
H-Index: 18
Patrick Fay
H-Index: 30
A D-band frequency-doubling distributed amplifier through monolithic integration of SiC SIW and GaN HEMTs
2023/12/5
1.7-kV vertical GaN pn diode with triple-zone graded junction termination extension formed by ion-implantation
e-Prime-Advances in Electrical Engineering, Electronics and Energy
2023/12/1
Yu Duan
H-Index: 5
Patrick Fay
H-Index: 30
Thank You to Our Reviewers and Editors!
IEEE Transactions on Electron Devices
2023/11/27
Patrick Fay
H-Index: 30
Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies
Applied Physics Letters
2023/7/3
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