Debdeep Jena
Cornell University
H-index: 88
North America-United States
Top articles of Debdeep Jena
Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy
Journal of Vacuum Science & Technology A
2024/5/1
Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
Applied Physics Letters
2024/4/8
Dualtronics: leveraging both faces of polar semiconductors
arXiv preprint arXiv:2404.03733
2024/4/4
Epitaxial growth of α-(AlxGa1− x) 2O3 by suboxide molecular-beam epitaxy at 1 µm/h
APL Materials
2024/4/1
Impacts of device processing on contact interfaces to (010) β-Ga2O3
2024/3/15
Debdeep Jena
H-Index: 63
Hari P Nair
H-Index: 13
Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure
Applied Physics Letters
2024/3/11
Growth of wurtzite AlScN thin films on commercial Silicon and SOI (111) substrates using PAMBE
Bulletin of the American Physical Society
2024/3/6
Homoepitaxial sapphire for superconducting qubits
Bulletin of the American Physical Society
2024/3/5
Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates
Applied Physics Letters
2024/3/4
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same
2024/2/6
Erratum:“Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy”[APL Mater. 11, 111113 (2023)]
APL Materials
2024/1/1
Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1− x) 2O3 on m-plane α-Al2O3 by molecular beam epitaxy
APL Materials
2024/1/1
Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
APL materials
2023/4/1
Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy
Japanese Journal of Applied Physics
2023/3/23
Defeating broken symmetry with doping: Symmetric resonant tunneling in noncentrosymetric heterostructures
Physical Review B
2023/3/2
Jimy Encomendero
H-Index: 7
Vladimir Protasenko
H-Index: 24
Debdeep Jena
H-Index: 63
Huili Grace Xing
H-Index: 54
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Applied Physics Letters
2023/2/27
Resistive electrodes on ferroelectric devices for linear piezoelectric programming
2023/2/23
Electric field induced migration of native point defects in Ga2O3 devices
Journal of Applied Physics
2023/1/21
Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs)
2023
Properties of epitaxial superconductor/semiconductor heterostuctures
APS March Meeting Abstracts
2023
Debdeep Jena
H-Index: 63
John Wright
H-Index: 38