Debdeep Jena

Debdeep Jena

Cornell University

H-index: 88

North America-United States

About Debdeep Jena

Debdeep Jena, With an exceptional h-index of 88 and a recent h-index of 65 (since 2020), a distinguished researcher at Cornell University, specializes in the field of Semiconductors, Nanoelectronic and Photonic Devices, Molecular Beam Epitaxy, Quantum Mechanics of Transport Properties, Solid St.

His recent articles reflect a diverse array of research interests and contributions to the field:

Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Dualtronics: leveraging both faces of polar semiconductors

Epitaxial growth of α-(AlxGa1− x) 2O3 by suboxide molecular-beam epitaxy at 1 µm/h

Impacts of device processing on contact interfaces to (010) β-Ga2O3

Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure

Growth of wurtzite AlScN thin films on commercial Silicon and SOI (111) substrates using PAMBE

Homoepitaxial sapphire for superconducting qubits

Debdeep Jena Information

University

Position

___

Citations(all)

34426

Citations(since 2020)

18411

Cited By

23839

hIndex(all)

88

hIndex(since 2020)

65

i10Index(all)

323

i10Index(since 2020)

247

Email

University Profile Page

Google Scholar

Debdeep Jena Skills & Research Interests

Semiconductors

Nanoelectronic and Photonic Devices

Molecular Beam Epitaxy

Quantum Mechanics of Transport Properties

Solid St

Top articles of Debdeep Jena

Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy

Journal of Vacuum Science & Technology A

2024/5/1

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Applied Physics Letters

2024/4/8

Dualtronics: leveraging both faces of polar semiconductors

arXiv preprint arXiv:2404.03733

2024/4/4

Epitaxial growth of α-(AlxGa1− x) 2O3 by suboxide molecular-beam epitaxy at 1 µm/h

APL Materials

2024/4/1

Impacts of device processing on contact interfaces to (010) β-Ga2O3

2024/3/15

Debdeep Jena
Debdeep Jena

H-Index: 63

Hari P Nair
Hari P Nair

H-Index: 13

Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure

Applied Physics Letters

2024/3/11

Growth of wurtzite AlScN thin films on commercial Silicon and SOI (111) substrates using PAMBE

Bulletin of the American Physical Society

2024/3/6

Homoepitaxial sapphire for superconducting qubits

Bulletin of the American Physical Society

2024/3/5

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Applied Physics Letters

2024/3/4

High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same

2024/2/6

Erratum:“Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy”[APL Mater. 11, 111113 (2023)]

APL Materials

2024/1/1

Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1− x) 2O3 on m-plane α-Al2O3 by molecular beam epitaxy

APL Materials

2024/1/1

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

APL materials

2023/4/1

Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

Japanese Journal of Applied Physics

2023/3/23

Defeating broken symmetry with doping: Symmetric resonant tunneling in noncentrosymetric heterostructures

Physical Review B

2023/3/2

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Applied Physics Letters

2023/2/27

Resistive electrodes on ferroelectric devices for linear piezoelectric programming

2023/2/23

Electric field induced migration of native point defects in Ga2O3 devices

Journal of Applied Physics

2023/1/21

Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs)

2023

Properties of epitaxial superconductor/semiconductor heterostuctures

APS March Meeting Abstracts

2023

Debdeep Jena
Debdeep Jena

H-Index: 63

John Wright
John Wright

H-Index: 38

See List of Professors in Debdeep Jena University(Cornell University)