Patrick Vogt

Patrick Vogt

Cornell University

H-index: 15

North America-United States

Contact Patrick Vogt

About Patrick Vogt

Patrick Vogt, With an exceptional h-index of 15 and a recent h-index of 14 (since 2020), a distinguished researcher at Cornell University, specializes in the field of semiconductors, thin film synthesis, surface physics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two …

Erratum:“Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy”[APL Mater. 11, 111113 (2023)]

Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1− x) 2O3 on m-plane α-Al2O3 by molecular beam epitaxy

Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy

Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy

Nucleation Window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

Patrick Vogt Information

University	Cornell University
Position	___
Citations(all)	1020
Citations(since 2020)	846
Cited By	479
hIndex(all)	15
hIndex(since 2020)	14
i10Index(all)	18
i10Index(since 2020)	16
Email	Access Email
University Profile Page	Cornell University
Google Scholar	View Google Scholar Profile

Patrick Vogt Skills & Research Interests

semiconductors

thin film synthesis

surface physics

Top articles of Patrick Vogt

Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two …

ACS Applied Materials & Interfaces

2024

Martin Albrecht

H-Index: 38

Patrick Vogt

H-Index: 12

Erratum:“Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy”[APL Mater. 11, 111113 (2023)]

APL Materials

2024/1/1

Manuel Alonso-Orts

H-Index: 4

Kazuki Nomoto

H-Index: 22

Huili Grace Xing

H-Index: 54

Andreas Rosenauer

H-Index: 32

Debdeep Jena

H-Index: 63

Martin Eickhoff

H-Index: 31

Patrick Vogt

H-Index: 12

Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1− x) 2O3 on m-plane α-Al2O3 by molecular beam epitaxy

APL Materials

2024/1/1

Manuel Alonso-Orts

H-Index: 4

Debdeep Jena

H-Index: 63

Andreas Rosenauer

H-Index: 32

Martin Eickhoff

H-Index: 31

Patrick Vogt

H-Index: 12

Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy

APL Materials

2023/11/1

Manuel Alonso-Orts

H-Index: 4

Kazuki Nomoto

H-Index: 22

Huili Grace Xing

H-Index: 54

Andreas Rosenauer

H-Index: 32

Debdeep Jena

H-Index: 63

Martin Eickhoff

H-Index: 31

Patrick Vogt

H-Index: 12

Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy

APL Materials

2023/9/1

Patrick Vogt

H-Index: 12

Andreas Rosenauer

H-Index: 32

Martin Eickhoff

H-Index: 31

Nucleation Window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3

Crystal Growth & Design

2023/5/23

Andreas Rosenauer

H-Index: 32

Patrick Vogt

H-Index: 12

Martin Eickhoff

H-Index: 31

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

APL materials

2023/4/1

Yunjo Kim

H-Index: 8

Patrick Vogt

H-Index: 12

Debdeep Jena

H-Index: 63

David A Muller

H-Index: 75

Michael O Thompson

H-Index: 25

Hari P Nair

H-Index: 13

Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

Japanese Journal of Applied Physics

2023/3/23

Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer

Journal of Applied Physics

2022/11/21

Suboxide molecular-beam epitaxy and related structures

2022/10/4

Controlled Si doping of β-Ga2O3 by molecular beam epitaxy

Applied Physics Letters

2022/8/15

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide-catalyzed epitaxy

Physical Review Applied

2022/3/8

Patrick Vogt

H-Index: 12

Jisung Park

H-Index: 6

Kursti Delello

H-Index: 2

David A Muller

H-Index: 75

Debdeep Jena

H-Index: 63

Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire

Applied Physics Letters

2021/8/9

Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

Apl Materials

2021/3/1

Patrick Vogt

H-Index: 12

David Turner

H-Index: 27

Jisung Park

H-Index: 6

Debdeep Jena

H-Index: 63

David A Muller

H-Index: 75

Influence of Polymorphism on the Electronic Structure of Ga2O3

Chemistry of Materials

2020/9/2

Christian Vorwerk

H-Index: 5

Patrick Vogt

H-Index: 12

Martin Eickhoff

H-Index: 31

Philip Murgatroyd

H-Index: 6

Claudia Draxl

H-Index: 41

Anna Regoutz

H-Index: 24

Plasma-assisted molecular beam epitaxy 2: Fundamentals of suboxide-related growth kinetics, thermodynamics, catalysis, polymorphs, and faceting

Gallium Oxide: Materials Properties, Crystal Growth, and Devices

2020

Patrick Vogt

H-Index: 12

See List of Professors in Patrick Vogt University(Cornell University)

Co-Authors

H-index: 140

Jim Speck — Jim Speck
University of California, Santa Barbara

Visit Jim Speck Page

H-index: 119

David A Muller — David A Muller
Cornell University

Visit David A Muller Page

H-index: 118

Darrell G. Schlom — Darrell G. Schlom
Cornell University

Visit Darrell G. Schlom Page

H-index: 92

Marius Grundmann — Marius Grundmann
Universität Leipzig

Visit Marius Grundmann Page

H-index: 88

Debdeep Jena — Debdeep Jena
Cornell University

Visit Debdeep Jena Page

H-index: 80

Huili Grace Xing — Huili Grace Xing
Cornell University

Visit Huili Grace Xing Page

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