Debdeep Jena
Cornell University
H-index: 88
North America-United States
Top articles of Debdeep Jena
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates | Applied Physics Letters | Shivali Agrawal Len van Deurzen Jimy Encomendero Joseph E Dill Hsin Wei Sheena Huang | 2024/3/4 |
Epitaxial growth of α-(AlxGa1− x) 2O3 by suboxide molecular-beam epitaxy at 1 µm/h | APL Materials | Jacob Steele Kathy Azizie Naomi Pieczulewski Yunjo Kim Shin Mou | 2024/4/1 |
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same | 2024/2/6 | ||
Impacts of device processing on contact interfaces to (010) β-Ga2O3 | Kathleen T Smith Cameron A Gorsak Avijit Kalra Bennett J Cromer Debdeep Jena | 2024/3/15 | |
Erratum:“Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy”[APL Mater. 11, 111113 (2023)] | APL Materials | Sushma Raghuvansy Jon P McCandless Marco Schowalter Alexander Karg Manuel Alonso-Orts | 2024/1/1 |
Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy | Journal of Vacuum Science & Technology A | B Cromer D Saraswat N Pieczulewski W Li K Nomoto | 2024/5/1 |
Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure | Applied Physics Letters | JP McCandless CA Gorsak V Protasenko DG Schlom Michael O Thompson | 2024/3/11 |
Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1− x) 2O3 on m-plane α-Al2O3 by molecular beam epitaxy | APL Materials | Martin S Williams Manuel Alonso-Orts Marco Schowalter Alexander Karg Sushma Raghuvansy | 2024/1/1 |
Growth of wurtzite AlScN thin films on commercial Silicon and SOI (111) substrates using PAMBE | Bulletin of the American Physical Society | Rishabh Singh Thai-Son Nguyen Anand Ithepalli Debdeep Jena Huili Grace Xing | 2024/3/6 |
Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates | Applied Physics Letters | Yu-Hsin Chen Jimy Encomendero Chandrashekhar Savant Vladimir Protasenko Huili Grace Xing | 2024/4/8 |
Homoepitaxial sapphire for superconducting qubits | Bulletin of the American Physical Society | Manas Verma Vladimir Protasenko Huili Grace Xing Debdeep Jena | 2024/3/5 |
Dualtronics: leveraging both faces of polar semiconductors | arXiv preprint arXiv:2404.03733 | Len van Deurzen Eungkyun Kim Naomi Pieczulewski Zexuan Zhang Anna Feduniewicz-Zmuda | 2024/4/4 |
2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC | physica status solidi (a) | Austin Hickman Reet Chaudhuri Lei Li Kazuki Nomoto Neil Moser | 2023/8 |
Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy | APL Materials | Sushma Raghuvansy Jon P McCandless Marco Schowalter Alexander Karg Manuel Alonso-Orts | 2023/11/1 |
Transport properties of heavily Si doped high Al mole fraction AlxGa1-xN grown by MBE on single-crystal AlN substrates | APS March Meeting Abstracts | Chandrashekhar Savant Ryan Page Thai-Son Nguyen Kevin Lee Vladimir Protasenko | 2023 |
Electric field induced migration of native point defects in Ga2O3 devices | Journal of Applied Physics | Micah S Haseman Daram N Ramdin Wenshen Li Kazuki Nomoto Debdeep Jena | 2023/1/21 |
Non-alloyed ohmic contacts to (010) β-Ga2O3 with low contact resistance | Applied Physics Letters | Kathleen T Smith Cameron A Gorsak Avijit Kalra Bennett J Cromer Kathy Azizie | 2023/12/11 |
Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy | APL materials | Kathy Azizie Felix VE Hensling Cameron A Gorsak Yunjo Kim Naomi A Pieczulewski | 2023/4/1 |
AlN/AlGaN/AlN quantum well channel HEMTs | Applied Physics Letters | Jashan Singhal Eungkyun Kim Austin Hickman Reet Chaudhuri Yongjin Cho | 2023/5/29 |
RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages | 2023/7/25 |
