Matteo Meneghini
Università degli Studi di Padova
H-index: 60
Europe-Italy
Top articles of Matteo Meneghini
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Defects, performance, and reliability in UVC LEDs | Matteo Meneghini Nicola Roccato Francesco Piva Marco Pilati Carlo De Santi | 2024/3/13 | |
Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics | IEEE Transactions on Electron Devices | Michele Zenari Matteo Buffolo Carlo De Santi Jeroen Goyvaerts Alexander Grabowski | 2024/1/3 |
Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements | Materials Science in Semiconductor Processing | Alberto Marcuzzi Marina Avramenko Carlo De Santi Filip Geenen Peter Moens | 2024/7/1 |
Positive VTH shift in Schottky p-GaN Gate power HEMTs: Dependence on Temperature, Bias and Gate leakage | IEEE Transactions on Power Electronics | Nicola Modolo Carlo De Santi Sebastien Sicre Andrea Minetto Gaudenzio Meneghesso | 2024/2/22 |
Antimony selenide solar cells: non-ideal deep level response and study of trap-filling transients | Carlo De Santi Jessica Jazmine Nicole Barrantes Francesco Piva Alessandro Caria Matteo Buffolo | 2024/3/8 | |
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD | Journal of Semiconductors | Nicolò Zagni Manuel Fregolent Andrea Del Fiol Davide Favero Francesco Bergamin | 2024 |
TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells | IEEE Journal of Photovoltaics | Marco Nicoletto Alessandro Caria Carlo De Santi Matteo Buffolo Matteo GC Alasio | 2024/3/19 |
Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs | Marco Nicoletto Alessandro Caria Fabiana Rampazzo Carlo De Santi Matteo Buffolo | 2024/3/8 | |
Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack | Carlo De Santi Manuel Fregolent Enrico Brusaterra Kornelius Tetzner Joachim Würfl | 2024/3/15 | |
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis | IEEE Transactions on Electron Devices | Marco Nicoletto Alessandro Caria Fabiana Rampazzo Carlo De Santi Matteo Buffolo | 2024/1/26 |
Semitransparent perovskite solar cells for Si tandem and agrivoltaic integration | Nicola Trivellin Noah Tormena Jasmine Jessica Nicole Barrantes Carlo De Santi Francesco Piva | 2024/3/8 | |
Robustness and reliability of high-power white LEDs under high-temperature, high-current stress | A Caria R Fraccaroli G Pierobon T Castellaro G Mura | 2024/3/13 | |
Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs | IEEE Photonics Journal | Nicola Roccato Francesco Piva Carlo De Santi Matteo Buffolo Normal Susilo | 2024/1/18 |
Lifetime-limiting mechanisms of integrated IR sources for silicon photonics | Matteo Buffolo Michele Zenari Carlo De Santi Chen Shang Justin Norman | 2024/3/8 | |
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives | M Buffolo D Favero A Marcuzzi C De Santi G Meneghesso | 2024/1/10 | |
Undestanding commercial UVC LEDs reliability to boost disinfection efficacy | Nicola Trivellin Francesco Piva Carlo De Santi Alessandro Caria Matteo Buffolo | 2024/3/13 | |
Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications | IEEE Transactions on Electron Devices | Matteo Meneghini Geok Ing Ng Farid Medjdoub Matteo Buffolo Shireen Warnock | 2024/3/1 |
Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness | Microelectronics Reliability | Andrea Benato Carlo De Santi Matteo Borga Benoit Bakeroot Izabela Kuzma Filipek | 2023/11/1 |
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling | Marco Nicoletto Alessandro Caria Carlo DE SANTI Matteo Buffolo Xuanqui Huang | 2023 | |
Bias-dependent degradation of single quantum well on InGaN-based light emitting diode | Microelectronics Reliability | C Casu M Buffolo A Caria F Piva C De Santi | 2023/11/1 |
