Ved Gund

Ved Gund

Cornell University

H-index: 8

North America-United States

About Ved Gund

Ved Gund, With an exceptional h-index of 8 and a recent h-index of 8 (since 2020), a distinguished researcher at Cornell University, specializes in the field of MEMS, ferroelectrics, inertial sensors, RF filters, chemical sensors.

His recent articles reflect a diverse array of research interests and contributions to the field:

Design and Implementation of an AlScN-Based FeMEMS Multiplier for In-Memory Computing Applications

Feature-Based Machine Learning for Predicting Resistances in Printed Electronics

Resistive electrodes on ferroelectric devices for linear piezoelectric programming

Programmable Ferroelectric HZO NEMS Mechanical Multiplier for in-Memory Computing

EPITAXIAL ScxAl1-xN SEMICONDUCTOR DEVICES

AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality

FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors

HZO-based FerroNEMS MAC for in-memory computing

Ved Gund Information

University

Position

Research Associate

Citations(all)

233

Citations(since 2020)

206

Cited By

38

hIndex(all)

8

hIndex(since 2020)

8

i10Index(all)

7

i10Index(since 2020)

6

Email

University Profile Page

Google Scholar

Ved Gund Skills & Research Interests

MEMS

ferroelectrics

inertial sensors

RF filters

chemical sensors

Top articles of Ved Gund

Design and Implementation of an AlScN-Based FeMEMS Multiplier for In-Memory Computing Applications

2023/7/23

Feature-Based Machine Learning for Predicting Resistances in Printed Electronics

2023/7/9

Resistive electrodes on ferroelectric devices for linear piezoelectric programming

2023/2/23

Programmable Ferroelectric HZO NEMS Mechanical Multiplier for in-Memory Computing

2023/1/15

Shubham Jadhav
Shubham Jadhav

H-Index: 3

Ved Gund
Ved Gund

H-Index: 4

EPITAXIAL ScxAl1-xN SEMICONDUCTOR DEVICES

2023/11/23

AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality

2023/10/16

FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors

2022/12/3

HZO-based FerroNEMS MAC for in-memory computing

Applied Physics Letters

2022/11/7

Laser-Induced Graphene Pressure Sensors Manufactured via Inkjet PCB Printer: Locally Producing Super-Sensitive and Cost-Effective Circular Diaphragm Pressure Gauges

2022/7/10

Ved Gund
Ved Gund

H-Index: 4

Benyamin Davaji
Benyamin Davaji

H-Index: 7

Intrinsically switchable GHz ferroelectric ScAlN SAW resonators

2022/6/27

CMOS-integrated aluminum nitride MEMS: A review

2022/5/13

Ved Gund
Ved Gund

H-Index: 4

Multi-level Analog Programmable Graphene Resistive Memory with Fractional Channel Ferroelectric Switching in Hafnium Zirconium Oxide

2022/4/24

Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties

Applied Physics Letters

2022/4/11

Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques

2022/3/15

Ved Gund
Ved Gund

H-Index: 4

Development of compact multi-beam ion accelerators for plasma heating

APS Division of Plasma Physics Meeting Abstracts

2022

Ved Gund
Ved Gund

H-Index: 4

Khurram Afridi
Khurram Afridi

H-Index: 26

PCB Integrated Linbo3 Pyroelectric High Voltage Supply with Electrostatic Switch Regulator

2021/6/20

Ved Gund
Ved Gund

H-Index: 4

Towards Realizing the Low-Coercive Field Operation of Sputtered Ferroelectric ScxAl1-xN

2021/6/20

Ferroelectricity in polar ScAlN/GaN epitaxial semiconductor heterostructures

arXiv preprint arXiv:2105.10114

2021/5/21

Temperature-dependent Lowering of Coercive Field in 300 nm Sputtered Ferroelectric Al0.70Sc0.30N

2021/5/16

Pyroelectric lithium niobate electron emission-based ion-pump

Journal of Vacuum Science & Technology B

2021/3/1

Ved Gund
Ved Gund

H-Index: 4

See List of Professors in Ved Gund University(Cornell University)

Co-Authors

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