Elaheh Ahmadi
University of Michigan
H-index: 31
North America-United States
Top articles of Elaheh Ahmadi
Investigation of ALD HfSiOx as gate dielectric on β-Ga2O3 (001)
Applied Physics Letters
2024/3/25
Diluted disilane as silicon source for uniform and controllable n-type doping of Ga2O3 via molecular beam epitaxy
2024/3/16
Elaheh Ahmadi
H-Index: 21
Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy
Applied Physics Letters
2024/2/5
Cindy Lee
H-Index: 32
Elaheh Ahmadi
H-Index: 21
Comparative analysis of selective area grown Ga-and N-polar InGaN/GaN nanowires for quantum emitters
AIP Advances
2024/2/1
Arnob Ghosh
H-Index: 11
Kamruzzaman Khan
H-Index: 3
Zhe Ashley Jian
H-Index: 3
Syed Hasan
H-Index: 6
Elaheh Ahmadi
H-Index: 21
Thermal stability of HVPE-grown (0001) α-Ga2O3 on sapphire template under vacuum and atmospheric environments
Journal of Vacuum Science & Technology A
2023/7/1
Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer
Advanced Electronic Materials
2023/6/27
Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy
Journal of Crystal Growth
2023/6/1
Kamruzzaman Khan
H-Index: 3
Zhe Ashley Jian
H-Index: 3
Jonathan Li
H-Index: 3
Kai Sun
H-Index: 10
Elaheh Ahmadi
H-Index: 21
Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric
Journal of Electronic Materials
2023/4
Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3
Journal of Vacuum Science and Technology A
2023/3/1
Si doping of β-Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy
Applied Physics Letters
2023/2/20
Uniform and controlled Si doping of Ga2O3 by disilane via hybrid molecular beam epitaxy
APS March Meeting Abstracts
2023
Elaheh Ahmadi
H-Index: 21
Kamruzzaman Khan
H-Index: 3
N-polar GaN: Epitaxy, properties, and device applications
2023/1/1
Demonstration of 82% relaxed In0. 18Ga0. 82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy
Physica Scripta
2023/12/29
Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy
Materials Research Letters
2023/12/2
Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties
APL Materials
2023/12/1
N-Polar GaN Deep Recess HEMT With Atomic Layer Deposition HfO as Gate Insulator
IEEE Transactions on Electron Devices
2023/7/24
Subhajit Mohanty
H-Index: 2
Elaheh Ahmadi
H-Index: 21
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
2022/12/26
Elaheh Ahmadi
H-Index: 21
Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN
Journal of Applied Physics
2022/12/15
METHOD TO CONTROL THE RELAXATION OF THICK FILMS ON LATTICE-MISMATCHED SUBSTRATES
2022/12/15
Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN
APL Materials
2022/12/1
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