Umesh Mishra
University of California, Santa Barbara
H-index: 130
North America-United States
Top articles of Umesh Mishra
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz | IEEE Microwave and Wireless Technology Letters | Emre Akso Weiyi Li Christopher Clymore Everett O’ Malley Matthew Guidry | 2024 |
Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs | IEEE Transactions on Electron Devices | Shalini Lal Jing Lu Brian J Thibeault Man Hoi Wong Chris G Van de Walle | 2024/2/5 |
N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz | IEEE Microwave and Wireless Technology Letters | Henry Collins Emre Akso Nirupam Hatui Christopher J Clymore Christian Wurm | 2024/1/24 |
Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz | IEEE Microwave and Wireless Technology Letters | Emre Akso Henry Collins Kamruzzaman Khan Boyu Wang Weiyi Li | 2024/1/1 |
METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION OF PSEUDO-SUBSTRATES AND FORMATION OF COMPOSITES ALLOWING THE ADDITION OF PREVIOUSLY UN-ACCESSIBLE … | 2024/2/22 | ||
Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges | AIP Advances | Matthew S Wong Aditya Raj Hsun-Ming Chang Vincent Rienzi Feng Wu | 2023/1/1 |
N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization | Crystals | Vineeta R Muthuraj Wenjian Liu Henry Collins Weiyi Li Robert Hamwey | 2023/4/19 |
First Demonstration of an N-Polar InAlGaN/GaN HEMT | IEEE Electron Device Letters | Robert Hamwey Nirupam Hatui Emre Akso Feng Wu Christopher Clymore | 2023/12/25 |
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz | Emre Akso Christopher Clymore Wenjian Liu Henry Collins Brian Romanczyk | 2023/6/25 | |
Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply | Proceedings of the IEEE | Umesh K Mishra | 2023/4/5 |
First comparison of active and passive load pull at W-band | Christopher J Clymore Emre Akso Matthew Guidry Henry Collins Wenjian Liu | 2023/6/16 | |
Innovations in GaN Four Quadrant Switch technology | Geetak Gupta Carl Neufeld Davide Bisi Yulu Huang Bill Cruse | 2023/12/4 | |
Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands | IEEE Transactions on Microwave Theory and Techniques | Rohit R Karnaty Pawana Shrestha Matthew Guidry Brian Romanczyk Umesh K Mishra | 2023/3/8 |
Modeling and Measurement of Dual-Threshold N-polar GaN HEMTS for High-Linearity RF Applications | Rohit R Karnaty Pawana Shrestha Matthew Guidry Brian Romanczyk Umesh K Mishra | 2023/6/11 | |
Iii-nitride devices with through-via structures | 2023/10/19 | ||
Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs | IEEE Transactions on Electron Devices | Weiyi Li Brian Romanczyk Matthew Guidry Emre Akso Nirupam Hatui | 2023/2/6 |
III-N transistor structures with stepped cap layers | 2023/2/28 | ||
Gate-tunable superconductor-semiconductor parametric amplifier | Physical Review Applied | D Phan P Falthansl-Scheinecker U Mishra WM Strickland D Langone | 2023/6/9 |
Iii-nitride devices including a depleting layer | 2023/9/21 | ||
First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz | IEEE Microwave and Wireless Technology Letters | Emre Akso Henry Collins Christopher Clymore Weiyi Li Matthew Guidry | 2023/2/1 |
