Christian Wurm
University of California, Santa Barbara
H-index: 10
North America-United States
Top articles of Christian Wurm
Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz
IEEE Microwave and Wireless Technology Letters
2024
N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz
IEEE Microwave and Wireless Technology Letters
2024/1/24
Henry Collins
H-Index: 1
Emre Akso
H-Index: 1
Nirupam Hatui
H-Index: 10
Christian Wurm
H-Index: 5
Stacia Keller
H-Index: 49
Demonstration of 82% relaxed In0. 18Ga0. 82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy
Physica Scripta
2023/12/29
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz
2023/6/25
First comparison of active and passive load pull at W-band
2023/6/16
Emre Akso
H-Index: 1
Henry Collins
H-Index: 1
Wenjian Liu
H-Index: 2
Christian Wurm
H-Index: 5
Nirupam Hatui
H-Index: 10
Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs
IEEE Transactions on Electron Devices
2023/2/6
First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz
IEEE Microwave and Wireless Technology Letters
2023/2/1
Method to control the relaxation of thick films on lattice-mismatched substrates
2022/12/15
Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE
2022/12/3
Improved N-polar GaN mm-wave linearity, efficiency, and noise
2022/6/19
Impact of In flux on self-assembled InGaN/GaN superlattice grown on GaN template by plasma-assisted molecular beam epitaxy
2022/6/1
Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N
2022/6/1
Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE
Journal of Applied Physics
2022/1/7
Molecular Beam Epitaxy for New Generation Nitride Devices
2022
Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy
Physical Review Materials
2021/12/28
Kamruzzaman Khan
H-Index: 3
Kai Sun
H-Index: 10
Christian Wurm
H-Index: 5
Kanak Datta
H-Index: 3
Elaheh Ahmadi
H-Index: 21
GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and> 50 mA/mm on-current
2021/12/11
Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy
APL Materials
2021/12/1
Hybrid Asymmetrical Load Modulated Balanced Amplifier With Wide Bandwidth and Three-Way-Doherty Efficiency Enhancement
IEEE Microwave and Wireless Components Letters
2021/3/24
6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates
IEEE Microwave and Wireless Components Letters
2021/3/18
N-polar GaN-on-Sapphire deep recess HEMTs with high W-band power density
IEEE Electron Device Letters
2020/9/7
