Stacia Keller
University of California, Santa Barbara
H-index: 105
North America-United States
Top articles of Stacia Keller
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz | IEEE Microwave and Wireless Technology Letters | Henry Collins Emre Akso Nirupam Hatui Christopher J Clymore Christian Wurm | 2024/1/24 |
Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz | IEEE Microwave and Wireless Technology Letters | Emre Akso Henry Collins Kamruzzaman Khan Boyu Wang Weiyi Li | 2024/1/1 |
Trypanosomiasis: An emerging disease in Alpine swift (Tachymarptis melba) nestlings in Switzerland? | International Journal for Parasitology: Parasites and Wildlife | Pia Cigler G Moré P Bize CM Meier CF Frey | 2024/4/1 |
METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION OF PSEUDO-SUBSTRATES AND FORMATION OF COMPOSITES ALLOWING THE ADDITION OF PREVIOUSLY UN-ACCESSIBLE … | 2024/2/22 | ||
Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz | IEEE Microwave and Wireless Technology Letters | Emre Akso Weiyi Li Christopher Clymore Everett O’ Malley Matthew Guidry | 2024 |
First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz | IEEE Microwave and Wireless Technology Letters | Emre Akso Henry Collins Christopher Clymore Weiyi Li Matthew Guidry | 2023/2/1 |
N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization | Crystals | Vineeta R Muthuraj Wenjian Liu Henry Collins Weiyi Li Robert Hamwey | 2023/4/19 |
Properties of high to ultrahigh Si-doped GaN grown at 550° C by flow modulated metalorganic chemical vapor deposition | Applied Physics Letters | Vineeta R Muthuraj Caroline E Reilly Thomas Mates Shuji Nakamura Steven P DenBaars | 2023/4/3 |
III-N transistor structures with stepped cap layers | 2023/2/28 | ||
Demonstration of 82% relaxed In0. 18Ga0. 82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy | Physica Scripta | Kamruzzaman Khan Christian Wurm Henry Collins Vineeta R Muthuraj Md Irfan Khan | 2023/12/29 |
Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers | 2023/2/21 | ||
First Demonstration of an N-Polar InAlGaN/GaN HEMT | IEEE Electron Device Letters | Robert Hamwey Nirupam Hatui Emre Akso Feng Wu Christopher Clymore | 2023/12/25 |
Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs | IEEE Transactions on Electron Devices | Weiyi Li Brian Romanczyk Matthew Guidry Emre Akso Nirupam Hatui | 2023/2/6 |
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz | Emre Akso Christopher Clymore Wenjian Liu Henry Collins Brian Romanczyk | 2023/6/25 | |
Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition | Applied Physics Letters | Vineeta R Muthuraj Caroline E Reilly Thomas Mates Stacia Keller Shuji Nakamura | 2022/3/7 |
Improved N-polar GaN mm-wave linearity, efficiency, and noise | Matthew Guidry Pawana Shrestha Wenjian Liu Brian Romanczyk Nirupam Hatui | 2022/6/19 | |
Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE | Journal of Applied Physics | Christian Wurm Henry Collins Nirupam Hatui Weiyi Li Shubhra Pasayat | 2022/1/7 |
Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N | Christian Wurm Henry Collins Nirupam Hatui Weiyi Li Shubhra Pasayat | 2022/6/1 | |
Method to control the relaxation of thick films on lattice-mismatched substrates | 2022/12/15 | ||
Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices | Crystals | Athith Krishna Aditya Raj Nirupam Hatui Stacia Keller Umesh K Mishra | 2022/5/28 |
