Brian Romanczyk
University of California, Santa Barbara
H-index: 21
North America-United States
Top articles of Brian Romanczyk
Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz
IEEE Microwave and Wireless Technology Letters
2024
Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz
IEEE Microwave and Wireless Technology Letters
2024/1/1
Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands
IEEE Transactions on Microwave Theory and Techniques
2023/3/8
Brian Romanczyk
H-Index: 13
III-N transistor structures with stepped cap layers
2023/2/28
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs
IEEE Transactions on Electron Devices
2023/2/6
First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz
IEEE Microwave and Wireless Technology Letters
2023/2/1
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz
2023/6/25
Modeling and Measurement of Dual-Threshold N-polar GaN HEMTS for High-Linearity RF Applications
2023/6/11
Brian Romanczyk
H-Index: 13
Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE
2022/12/3
GaN/AlGaN superlattice based E-mode hole channel FinFET with Schottky gate
IEEE Electron Device Letters
2022/11/17
Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise
2022/6/19
NOVEL APPROACH TO CONTROLLING LINEARITY IN N-POLAR GAN MISHEMTS
2021/12/23
GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and> 50 mA/mm on-current
2021/12/11
Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs
2021/11/7
Commercially Available N-polar GaN HEMT Epitaxy for RF Applications
2021/11/7
Structure for increasing mobility in a high electron mobility transistor
2021/8/24
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
Applied Physics Letters
2021/8/16
Brian Romanczyk
H-Index: 13
Xun Zheng
H-Index: 8
Haoran Li
H-Index: 32
Elaheh Ahmadi
H-Index: 21
Stacia Keller
H-Index: 49
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs
2021/3/21
6.2 W/mm and record 33.8% pae at 94 GHz from n-polar GaN deep recess MIS-HEMTs with ALD Ru gates
IEEE Microwave and Wireless Components Letters
2021/3/18
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