Shubham Mondal
University of Michigan
H-index: 11
North America-United States
Top articles of Shubham Mondal
A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction
Journal of Crystal Growth
2024/3/1
Suryansh Dongre
H-Index: 2
Jhuma Saha
H-Index: 6
Debabrata Das
H-Index: 12
Sritoma Paul
H-Index: 3
Shubham Mondal
H-Index: 3
Ferroelectric YAlN grown by molecular beam epitaxy
Applied Physics Letters
2023/7/17
ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel
2023/6/25
Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTs
2023/6/25
Ding Wang
H-Index: 9
Ping Wang
H-Index: 3
Shubham Mondal
H-Index: 3
Yuanpeng Wu
H-Index: 12
Tao Ma
H-Index: 14
Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing
Advanced Materials
2023/5
Ding Wang
H-Index: 9
Ping Wang
H-Index: 3
Shubham Mondal
H-Index: 3
Yuanpeng Wu
H-Index: 12
Tao Ma
H-Index: 14
Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors
ACS Applied Materials & Interfaces
2023/3/28
Ping Wang
H-Index: 3
Ding Wang
H-Index: 9
Shubham Mondal
H-Index: 3
Yuanpeng Wu
H-Index: 12
Tao Ma
H-Index: 14
A synergetic cocatalyst for conversion of carbon dioxide, sunlight and water into methanol
2023/3/7
Dawn of nitride ferroelectric semiconductors: from materials to devices
2023/2/1
Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT
Applied Physics Letters
2023/2/27
Ding Wang
H-Index: 9
Ping Wang
H-Index: 3
Shubham Mondal
H-Index: 3
Yuanpeng Wu
H-Index: 12
Tao Ma
H-Index: 14
Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy
Applied Physics Letters
2023/1/30
Ding Wang
H-Index: 9
Ping Wang
H-Index: 3
Shubham Mondal
H-Index: 3
Yuanpeng Wu
H-Index: 12
Tao Ma
H-Index: 14
Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties
APL Materials
2023/12/1
Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures
Applied Surface Science
2023/11/15
Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy
Applied Physics Letters
2023/10/30
Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers
Applied Physics Letters
2023/9/4
On the surface oxidation and band alignment of ferroelectric Sc0. 18Al0. 82N/GaN heterostructures
Applied Surface Science
2023/8/15
ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window
IEEE Transactions on Electron Devices
2023/8/1
Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN
APL Materials
2022/12/1
Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy
Applied Physics Letters
2022/7/25
Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy
Applied Physics Letters
2022/7/11
Fully Epitaxial Ferroelectric III-Nitride Semiconductors: From Materials to Devices
2022/6/26
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