Tibor Grasser
Technische Universität Wien
H-index: 65
Europe-Austria
Top articles of Tibor Grasser
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Extraction of Charge Trapping Kinetics of Defects from Single-Defect Measurements | IEEE Transactions on Device and Materials Reliability | Michael Waltl Bernhard Stampfer Tibor Grasser | 2024/5/1 |
Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors | npj 2D Materials and Applications | Yu Yu Illarionov A Karl Q Smets B Kaczer T Knobloch | 2024/2/2 |
Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs | arXiv preprint arXiv:2404.13463 | Maximilian W Feil Magdalena Weger Hans Reisinger Thomas Aichinger André Kabakow | 2024/4/20 |
Direct Evidence of Contact-Induced Variability in Industrially-Fabricated Highly-Scaled MoS2 FETs | Luca Panarella Ben Kaczer Quentin Smets Stanislav Tyaginov Pablo Saraza Canflanca | 2024/1/12 | |
A DLTS study on Deep Trench Processing induced Trap States in Silicon Photodiodes | IEEE Transactions on Device and Materials Reliability | Paul Stampfer Frederic Roger Lukas Cvitkovich Tibor Grasser Michael Waltl | 2024/3/27 |
PtSe₂ vdW single-crystal surfaces studied at the atomic scale with ncAFM | Igor Sokolovic Saeed Rasouli Bing Wu Zdeněk Sofer Aleksandar Matković | 2024/3/19 | |
Initial stages of growth and electronic properties of epitaxial SrF2 thin films on Ag (1 1 1) | Applied Surface Science | Mauro Borghi Andrea Mescola Guido Paolicelli Monica Montecchi Sergio D'Addato | 2024/2/18 |
Variability and High Temperature Reliability of Graphene Field-Effect Transistors with Thin Epitaxial CaF2 Insulators | Yury Illarionov Theresia Knobloch Burkay Uzlu Alexander Banshchikov Illiya Ivanov | 2024/2/9 | |
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability | Christian Bogner Christian Schlunder Michael Waltl Hans Reisinger Tibor Grasser | 2023/3/26 | |
Charged instrinsic defect states in amorphous Si3N4 | Christoph Wilhelmer Diego Milardovich Dominic Waldhör Lukas Cvitkovich Michael Waltl | 2023/5/29 | |
Physical Modelling of Charge Trapping Effects in SiC MOSFETs | Materials Science Forum | Michael Waltl Christian Schleich Aleksandr Vasilev Dominic Waldhoer Bernhard Stampfer | 2023/6/30 |
Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs | Materials Science Forum | Yoanlys Hernandez Christian Schleich Bernhard Stampfer Tibor Grasser Michael Waltl | 2023/7/10 |
(Invited) Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials | Electrochemical Society Meeting Abstracts 243 | Theresia Knobloch Tibor Grasser | 2023/8/28 |
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes | IEEE Transactions on Electron Devices | Paul Stampfer Frederic Roger Tibor Grasser Michael Waltl | 2023/9/25 |
Hot-carrier-degradation measured with charge-pumping in trench devices despite deep contacts | Sabina Sušnik Gregor Pobegen Tibor Grasser | 2023/10/8 | |
Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses | A Provias T Knobloch A Kitamura KP O’Brien CJ Dorow | 2023/12/9 | |
Dynamic modeling of Si (100) thermal oxidation: Oxidation mechanisms and realistic amorphous interface generation | Applied Surface Science | Lukas Cvitkovich Dominic Waldhör Al-Moatassem El-Sayed Markus Jech Christoph Wilhelmer | 2023/2/1 |
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs | Maximilian W Feil Katja Waschneck Hans Reisinger Judith Berens Thomas Aichinger | 2023/3/26 | |
DELMEP: a deep learning algorithm for automated annotation of motor evoked potential latencies | Scientific Reports | Diego Milardovich Victor H Souza Ivan Zubarev Sergei Tugin Jaakko O Nieminen | 2023/5/22 |
Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations | Materials Science Forum | Aleksandr Vasilev Maximilian Wolfgang Feil Christian Schleich Bernhard Stampfer Gerhard Rzepa | 2023/6/30 |
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