Michael Waltl
Technische Universität Wien
H-index: 28
Europe-Austria
Top articles of Michael Waltl
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Variability and High Temperature Reliability of Graphene Field-Effect Transistors with Thin Epitaxial CaF2 Insulators | Yury Illarionov Theresia Knobloch Burkay Uzlu Alexander Banshchikov Illiya Ivanov | 2024/2/9 | |
Extraction of Charge Trapping Kinetics of Defects from Single-Defect Measurements | IEEE Transactions on Device and Materials Reliability | Michael Waltl Bernhard Stampfer Tibor Grasser | 2024/5/1 |
Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs | arXiv preprint arXiv:2404.13463 | Maximilian W Feil Magdalena Weger Hans Reisinger Thomas Aichinger André Kabakow | 2024/4/20 |
A DLTS study on Deep Trench Processing induced Trap States in Silicon Photodiodes | IEEE Transactions on Device and Materials Reliability | Paul Stampfer Frederic Roger Lukas Cvitkovich Tibor Grasser Michael Waltl | 2024/3/27 |
Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators | arXiv preprint arXiv:2309.11233 | Yury Yu Illarionov Theresia Knobloch Burkay Uzlu Alexander G Banshikov Iliya A Ivanov | 2023/9/20 |
Charged instrinsic defect states in amorphous Si3N4 | Christoph Wilhelmer Diego Milardovich Dominic Waldhör Lukas Cvitkovich Michael Waltl | 2023/5/29 | |
Comphy v3. 0—a compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices | Microelectronics Reliability | Dominic Waldhoer Christian Schleich Jakob Michl Alexander Grill Dieter Claes | 2023/7/1 |
Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4) | Nanomaterials | Christoph Wilhelmer Dominic Waldhoer Lukas Cvitkovich Diego Milardovich Michael Waltl | 2023/8/9 |
Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses | A Provias T Knobloch A Kitamura KP O’Brien CJ Dorow | 2023/12/9 | |
Physical Modelling of Charge Trapping Effects in SiC MOSFETs | Materials Science Forum | Michael Waltl Christian Schleich Aleksandr Vasilev Dominic Waldhoer Bernhard Stampfer | 2023/6/30 |
Revealing the Impact of Gate Area Scaling on Charge Trapping employing SiO2 Transistors | IEEE Transactions on Device and Materials Reliability | K Tselios T Knobloch D Waldhoer B Stampfer E Ioannidis | 2023/3/27 |
All-Optical ReLU as a Photonic Neural Activation Function | Margareta V Stephanie Lam Pham Alexander Schindler Michael Waltl Tibor Grasser | 2023/7/17 | |
Advanced Extraction of Trap Parameters from Single-Defect Measurements | Michael Waltl Bernhard Stampfer Tibor Grasser | 2023/10/8 | |
Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations | Materials Science Forum | Aleksandr Vasilev Maximilian Wolfgang Feil Christian Schleich Bernhard Stampfer Gerhard Rzepa | 2023/6/30 |
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability | Christian Bogner Christian Schlunder Michael Waltl Hans Reisinger Tibor Grasser | 2023/3/26 | |
Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs | Materials Science Forum | Yoanlys Hernandez Christian Schleich Bernhard Stampfer Tibor Grasser Michael Waltl | 2023/7/10 |
Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H) | Christoph Wilhelmer Dominic Waldhoer Diego Milardovich Lukas Cvitkovich Michael Waltl | 2023/9/27 | |
A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays | A Grill J Michl J Diaz-Fortuny A Beckers E Bury | 2023/3/7 | |
Ab initio investigations of electron and hole trapping processes of H induced defects in amorphous SiO₂ | Christoph Wilhelmer Dominic Waldhör Lukas Cvitkovich Michael Waltl Tibor Grasser | 2023/6/12 | |
Lifetime Projection of Bipolar Operation of SiC DMOSFET | Materials Science Forum | Christian Schleich Maximilian Wolfgang Feil Dominic Waldhoer Aleksandr Vasilev Tibor Grasser | 2023/7/5 |
