Siegfried Selberherr

Siegfried Selberherr

Technische Universität Wien

H-index: 63

Europe-Austria

About Siegfried Selberherr

Siegfried Selberherr, With an exceptional h-index of 63 and a recent h-index of 32 (since 2020), a distinguished researcher at Technische Universität Wien, specializes in the field of Microelectronics, Spintronics, Semiconductor Devices, Simulation.

His recent articles reflect a diverse array of research interests and contributions to the field:

Advanced modeling and simulation of multilayer spin-transfer torque magnetoresistive random access memory with interface exchange coupling

Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds

Unified modeling of ultra-scaled STT-MRAM cells: Harnessing parasitic effects for enhanced data storage dynamics

Comprehensive mobility study of silicon nanowire transistors using multi-subband models

Technology Computer‐Aided Design: A key component of microelectronics' development

Comprehensive modeling of advanced composite magnetoresistive devices

Macroscopic transport models for classical device simulation

Switching composite free layers in ultra-scaled MRAM cells

Siegfried Selberherr Information

University

Position

Institute for Microelectronics

Citations(all)

25511

Citations(since 2020)

4620

Cited By

18769

hIndex(all)

63

hIndex(since 2020)

32

i10Index(all)

347

i10Index(since 2020)

90

Email

University Profile Page

Technische Universität Wien

Google Scholar

View Google Scholar Profile

Siegfried Selberherr Skills & Research Interests

Microelectronics

Spintronics

Semiconductor Devices

Simulation

Top articles of Siegfried Selberherr

Title

Journal

Author(s)

Publication Date

Advanced modeling and simulation of multilayer spin-transfer torque magnetoresistive random access memory with interface exchange coupling

Micromachines

Mario Bendra

Roberto L de Orio

Siegfried Selberherr

Wolfgang Goes

Viktor A Sverdlov

2024/4

Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds

Journal of Applied Physics

Hajdin Ceric

Houman Zahedmanesh

Kristof Croes

Roberto Lacerda de Orio

Siegfried Selberherr

2023/3/14

Unified modeling of ultra-scaled STT-MRAM cells: Harnessing parasitic effects for enhanced data storage dynamics

Mario Bendra

Nils Petter Jorstad

Roberto Lacerda de Orio

Siegfried Selberherr

Wolfgang Goes

...

2023/12/9

Comprehensive mobility study of silicon nanowire transistors using multi-subband models

Nano Express

Cristina Medina-Bailon

Mihail Nedjalkov

Vihar Georgiev

Siegfried Selberherr

Asen Asenov

2023/6/20

Technology Computer‐Aided Design: A key component of microelectronics' development

Siegfried Selberherr

Viktor A Sverdlov

2023/7

Comprehensive modeling of advanced composite magnetoresistive devices

Viktor A Sverdlov

Mario Bendra

Bernhard Pruckner

Simone Fiorentini

Wolfgang Goes

...

2023/9

Macroscopic transport models for classical device simulation

Johann Cervenka

Robert Kosik

Markus Jech

Martin Vasicek

Markus Gritsch

...

2022/11/11

Switching composite free layers in ultra-scaled MRAM cells

Mario Bendra

Simone Fiorentini

Tomas Hadamek

Nils Petter Jorstad

Johannes Ender

...

2023/2/12

Charge and spin transport in semiconductor devices

Viktor A Sverdlov

Siegfried Selberherr

2023/10

Switching performance of Mo-based pMTJ and dsMTJ structures

Bernhard Pruckner

Simone Fiorentini

Nils P Jørstad

Tomáš Hadámek

Siegfried Selberherr

...

2023/6

Simulation of spin-torque and magnetization dynamics in STT-MRAM multi-level cells

Mario Bendra

Simone Fiorentini

Siegfried Selberherr

Wolfgang Goes

Viktor A Sverdlov

2023/6

Micromagnetic Modeling of Double Spin-Torque Magnetic Tunnel Junction Devices

Available at SSRN 4528329

Bernhard Pruckner

Simone Fiorentini

Wolfgang Goes

Siegfried Selberherr

Viktor A Sverdlov

2023/9

A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping

Solid-State Electronics

Mario Bendra

Simone Fiorentini

Siegfried Selberherr

Wolfgang Goes

Viktor A Sverdlov

2023

Spin drift-diffusion boundary conditions for FEM modeling of multilayer SOT devices

Nils P Jørstad

Wolfgang Goes

Siegfried Selberherr

Viktor A Sverdlov

2023/9

Back-hopping in ultra-scaled MRAM cells

Mario Bendra

Simone Fiorentini

Johannes Ender

RL de Orio

Tomas Hadamek

...

2023/5/22

Micromagnetic modeling of SOT-MRAM dynamics

Nils P Jørstad

Simone Fiorentini

Wolfgang Goes

Siegfried Selberherr

Viktor A Sverdlov

2023/6

A theoretical study of armchair antimonene nanoribbons in the presence of uniaxial strain based on first-principles calculations

ACS Applied Electronic Materials

Arash Yazdanpanah Goharrizi

Ali Molajani Barzoki

Siegfried Selberherr

Lado Filipovic

2023/7/26

Finite element approach for the simulation of modern MRAM devices

Micromachines

Simone Fiorentini

Nils Petter Jørstad

Johannes Ender

Roberto Lacerda de Orio

Siegfried Selberherr

...

2023/4/22

Study of self-heating and its effects in SOT-STT-MRAM

Tomáš Hadámek

Nils P Jørstad

Wolfgang Goes

Siegfried Selberherr

Viktor A Sverdlov

2023/9

Accurate torque evaluation in elongated ultra-scaled STT-MRAM devices

Simone Fiorentini

Bernhard Pruckner

Wolfgang Goes

Siegfried Selberherr

Viktor A Sverdlov

2023/5

See List of Professors in Siegfried Selberherr University(Technische Universität Wien)

Co-Authors

H-index: 65
Tibor Grasser

Tibor Grasser

Technische Universität Wien

H-index: 61
Peter Markowich

Peter Markowich

King Abdullah University of Science and Technology

H-index: 42
christian ringhofer

christian ringhofer

Arizona State University

H-index: 27
Mahdi Pourfath

Mahdi Pourfath

University of Tehran

H-index: 25
Clemens Heitzinger

Clemens Heitzinger

Technische Universität Wien

H-index: 23
Mihail Nedjalkov, PhD Phys.,  D.Sc. Math.

Mihail Nedjalkov, PhD Phys., D.Sc. Math.

Technische Universität Wien

academic-engine