Theresia Knobloch
Technische Universität Wien
H-index: 18
Europe-Austria
Top articles of Theresia Knobloch
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Variability and High Temperature Reliability of Graphene Field-Effect Transistors with Thin Epitaxial CaF2 Insulators | Yury Illarionov Theresia Knobloch Burkay Uzlu Alexander Banshchikov Illiya Ivanov | 2024/2/9 | |
Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors | npj 2D Materials and Applications | Yu Yu Illarionov A Karl Q Smets B Kaczer T Knobloch | 2024/2/2 |
Direct Evidence of Contact-Induced Variability in Industrially-Fabricated Highly-Scaled MoS2 FETs | Luca Panarella Ben Kaczer Quentin Smets Stanislav Tyaginov Pablo Saraza Canflanca | 2024/1/12 | |
Observation of Rich Defect Dynamics in Monolayer MoS2 | ACS nano | Harikrishnan Ravichandran Theresia Knobloch Andrew Pannone Alexander Karl Bernhard Stampfer | 2023/7/25 |
Multi-Scale Modeling of Transistors Based on the 2D Semiconductor Bi2O2Se | Mohammad Rasool Davoudi Pedram Khakbaz Theresia Knobloch Dominic Waldhoer Changze Liu | 2023/9/27 | |
A stochastic encoder using point defect in two-dimensional materials | Saptarshi Das Harikrishnan Ravichandran Theresia Knobloch Shiva Subbulakshmi Radhakrishnan Sergei Stepanoff | 2023/12/21 | |
High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits | ECS Transactions | Theresia Knobloch Siegfried Selberherr Tibor Grasser | 2023/5/19 |
FinFETs based on layered 2D semiconductors | Science China Materials | Theresia Knobloch Tibor Grasser | 2023/9 |
Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors | IEEE Transactions on Electron Devices | Ahmed Mounir Benjamin Iñiguez François Lime Alexander Kloes Theresia Knobloch | 2023/12/12 |
Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects | IEEE Nanotechnology Magazine | Theresia Knobloch Dominic Waldhoer Tibor Grasser | 2023/7/3 |
Defects in Strontium Titanate: A First Principles Study | Mina Bahrami Dominic Waldhoer Pedram Khakbaz Theresia Knobloch Aftab Nazir | 2023/9/27 | |
Modeling the Performance and Reliability of Two-Dimensional Semiconductor Transistors | T Knobloch D Waldhoer MR Davoudi A Karl P Khakbaz | 2023/12/9 | |
Revealing the Impact of Gate Area Scaling on Charge Trapping employing SiO2 Transistors | IEEE Transactions on Device and Materials Reliability | K Tselios T Knobloch D Waldhoer B Stampfer E Ioannidis | 2023/3/27 |
Compact IV model for back-gated and double-gated TMD FETs | Solid-State Electronics | Ahmed Mounir Benjamin Iñiguez François Lime Alexander Kloes Theresia Knobloch | 2023/9/1 |
Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses | A Provias T Knobloch A Kitamura KP O’Brien CJ Dorow | 2023/12/9 | |
(Invited) Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials | Electrochemical Society Meeting Abstracts 243 | Theresia Knobloch Tibor Grasser | 2023/8/28 |
Comphy v3. 0—a compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices | Microelectronics Reliability | Dominic Waldhoer Christian Schleich Jakob Michl Alexander Grill Dieter Claes | 2023/7/1 |
Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators | arXiv preprint arXiv:2309.11233 | Yury Yu Illarionov Theresia Knobloch Burkay Uzlu Alexander G Banshikov Iliya A Ivanov | 2023/9/20 |
Insulators for Devices Based on 2D Materials | T Grasser D Waldhör T Knobloch | 2023/10/22 | |
Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology? | Michael Waltl Theresia Knobloch Konstantinos Tselios Lado Filipovic Bernhard Stampfer | 2022/12 |
Co-Authors
