Joerg Appenzeller
Purdue University
H-index: 72
North America-United States
Top articles of Joerg Appenzeller
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Reliability of High-Performance Monolayer MoS2 Transistors on Scaled High-κ HfO2 | Zhihong Chen Hao-Yu Lan Shao-Heng Yang Rahul Tripathi Joerg Appenzeller | 2024/4/1 | |
Unconventional Spin Hall Effect in Low Symmetry Semimetal for Large Spin-Orbit Readout Unit | Bulletin of the American Physical Society | Rahul Tripathi Hao-Yu Lan Punyashloka Debashis Hai Li Mahendra DC | 2024/3/6 |
Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS FETs | arXiv preprint arXiv:2308.10989 | John Daniel Zheng Sun Xuejian Zhang Yuanqiu Tan Neil Dilley | 2023/8/21 |
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics | arXiv preprint arXiv:2312.09136 | Cindy Y Chen Zheng Sun Riccardo Torsi Ke Wang Jessica Kachian | 2023/12/14 |
Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727 μA/μm Ion and 490 μS/ μm gmax via Hybrid Charge Transfer and Molecular Doping | Hao-Yu Lan Rahul Tripathi Xiangkai Liu Joerg Appenzeller Zhihong Chen | 2023/12/9 | |
A magnetoelectric memory device based on pseudo-magnetization | Journal of Applied Physics | Tingting Shen Orchi Hassan Neil R Dilley Supriyo Datta Kerem Y Camsari | 2023/7/21 |
A mobility study of monolayer MoS2 on low-κ/high-κ dielectrics | Zheng Sun Cindy Chen Joshua A Robinson Zhihong Chen Joerg Appenzeller | 2023/6/25 | |
High-Performance Complementary Circuits from Two-Dimensional MoTe2 | Nano Letters | Jun Cai Zheng Sun Peng Wu Rahul Tripathi Hao-Yu Lan | 2023/11/17 |
Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOxInterfacial Layer | IEEE Transactions on Electron Devices | Hao-Yu Lan Vladimir P Oleshko Albert V Davydov Joerg Appenzeller Zhihong Chen | 2023/3/13 |
Cross-coupled gated tunnel diode (xtd) device with increased peak-to-valley current ratio (pvcr) | 2023/9/14 | ||
Design and Process Co-Optimization of 2-D Monolayer Transistors via Machine Learning | IEEE Transactions on Electron Devices | Chin-Cheng Chiang Hao-Yu Lan Lina Liu Yong P Chen Dmitry Zemlyanov | 2023/9/12 |
Electric field control of interaction between magnons and quantum spin defects | Physical Review Research | Abhishek B Solanki Simeon I Bogdanov Mohammad M Rahman Avinash Rustagi Neil R Dilley | 2022/2/23 |
Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2 | ACS nano | Zheng Sun Chin-Sheng Pang Peng Wu Terry YT Hung Ming-Yang Li | 2022/9/12 |
Explaining Steep-Slope Switching in Carbon Nanotube Dirac-Source Field-Effect Transistors | IEEE Transactions on Electron Devices | Peng Wu Joerg Appenzeller | 2022/7/13 |
Design considerations for 2-D Dirac-source FETs—Part I: Basic operation and device parameters | IEEE Transactions on Electron Devices | Peng Wu Joerg Appenzeller | 2022/6/17 |
2022 Index Electron Device Letters Vol. 43 | IEEE Electron Device Letters | KA Aabrar T Abbey S Abdulazhanov C Adelmann MM Afandi | 2022/12 |
Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking | arXiv preprint arXiv:2203.11248 | Peng Wu Joerg Appenzeller | 2022/3/21 |
Cross-coupled gated tunneling diodes with unprecedented PVCRs enabling compact SRAM design—Part II: SRAM circuit | IEEE Transactions on Electron Devices | Mengyuan Li Peng Wu Bo Zhou Joerg Appenzeller Xiaobo Sharon Hu | 2022/9/29 |
Two-dimensional transistors with reconfigurable polarities for secure circuits | NATURE electronics | Peng Wu Dayane Reis Xiaobo Sharon Hu Joerg Appenzeller | 2021/1 |
Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices | IEEE Electron Device Letters | Chin-Cheng Chiang Hao-Yu Lan Chin-Sheng Pang Joerg Appenzeller Zhihong Chen | 2021/12/13 |
Co-Authors
