Mario Lanza

About Mario Lanza

Mario Lanza, With an exceptional h-index of 47 and a recent h-index of 43 (since 2020), a distinguished researcher at King Abdullah University of Science and Technology, specializes in the field of Nanoelectronics, 2D Materials, Resistive Switching, Scanning Probe Microscopy.

His recent articles reflect a diverse array of research interests and contributions to the field:

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Stochastic resonance in 2D materials based memristors

Impact of hydrogenation on the stability and mechanical properties of amorphous boron nitride

3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach

Hardware implementation of memristor-based artificial neural networks

Solution-processed memristors: performance and reliability

Anisotropic Superconducting Nb2CTx MXene Processed by Atomic Exchange at the Wafer Scale

Nonepitaxial Wafer‐Scale Single‐Crystal 2D Materials on Insulators

Mario Lanza Information

University

Position

(KAUST)

Citations(all)

8962

Citations(since 2020)

7060

Cited By

3896

hIndex(all)

47

hIndex(since 2020)

43

i10Index(all)

123

i10Index(since 2020)

106

Email

University Profile Page

King Abdullah University of Science and Technology

Google Scholar

View Google Scholar Profile

Mario Lanza Skills & Research Interests

Nanoelectronics

2D Materials

Resistive Switching

Scanning Probe Microscopy

Top articles of Mario Lanza

Title

Journal

Author(s)

Publication Date

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Advanced Functional Materials

Sebastian Pazos

Thales Becker

Marco Antonio Villena

Wenwen Zheng

Yaqing Shen

...

2024/4

Stochastic resonance in 2D materials based memristors

npj 2D Materials and Applications

JB Roldán

Antonio Cantudo

JJ Torres

D Maldonado

Yaqing Shen

...

2024/1/30

Impact of hydrogenation on the stability and mechanical properties of amorphous boron nitride

Journal of Physics: Materials

Onurcan Kaya

Luigi Colombo

Aleandro Antidormi

Marco A Villena

Mario Lanza

...

2024/3/28

3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach

Materials Horizons

D Maldonado

A Cantudo

FM Gómez-Campos

Yue Yuan

Yaqing Shen

...

2024

Hardware implementation of memristor-based artificial neural networks

Fernando Aguirre

Abu Sebastian

Manuel Le Gallo

Wenhao Song

Tong Wang

...

2024/3/4

Solution-processed memristors: performance and reliability

Sebastian Pazos

Xiangming Xu

Tianchao Guo

Kaichen Zhu

Husam N Alshareef

...

2024/4/12

Anisotropic Superconducting Nb2CTx MXene Processed by Atomic Exchange at the Wafer Scale

Advanced Materials

Xiangming Xu

Chenghui Zhang

Jun Yin

Jasmin Smajic

Mohammed Bahabri

...

2024/1

Nonepitaxial Wafer‐Scale Single‐Crystal 2D Materials on Insulators

Advanced Materials

Junzhu Li

Yue Yuan

Mario Lanza

Iwnetim Abate

Bo Tian

...

2024/3

A 5D, dynamic, spin physical unclonable function device

Cell Reports Physical Science

Hao Guo

Yue Qin

Yanming Liu

Sebastian Pazos

Xiaonan Wang

...

2024/4/9

Characterizing ABS–copper chemistry-dependent adhesion: From the atomic to macro level

Journal of Materials Research and Technology

Ran Tao

Hakkim Vovusha

Xiaole Li

Ruslan Melentiev

Kaichen Zhu

...

2024/2/21

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Advanced Functional Materials

Jihoon Yang

Aram Yoon

Donghyun Lee

Seunguk Song

IL John Jung

...

2023/9/27

Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

ACS Applied Electronic Materials

Juan B Roldán

Antonio Cantudo

David Maldonado

Cristina Aguilera-Pedregosa

Enrique Moreno

...

2024/2/15

Inkjet-printed h-BN memristors for hardware security

Nanoscale

Kaichen Zhu

Giovanni Vescio

Sergio González-Torres

Julià López-Vidrier

Juan Luis Frieiro

...

2023

The gap between academia and industry in resistive switching research

Nature Electronics

Mario Lanza

Gabriel Molas

Ishai Naveh

2023/4

Conductance quantization in h-bn memristors

Applied Physics Letters

Juan B Roldan

D Maldonado

A Cantudo

Yaqing Shen

Wenwen Zheng

...

2023/5/15

Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability

ACS Applied Electronic Materials

Timm Swoboda

Xing Gao

Carlos MM Rosário

Fei Hui

Kaichen Zhu

...

2023/9/5

High-performance van der Waals antiferroelectric CuCrP2S6-based memristors

Nature Communications

Yinchang Ma

Yuan Yan

Linqu Luo

Sebastian Pazos

Chenhui Zhang

...

2023/11/30

Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy

Nanoscale

Timm Swoboda

Nicolás Wainstein

Sanchit Deshmukh

Çağıl Köroğlu

Xing Gao

...

2023

Editorial Special Issue on Dielectrics for 2-D Electronics

IEEE Transactions on Electron Devices

Mario Lanza

Kin-Leong Pey

Tibor Grasser

2023/3/24

Cellular automata imbedded memristor-based recirculated logic in-memory computing

Nature Communications

Yanming Liu

He Tian

Fan Wu

Anhan Liu

Yihao Li

...

2023/5/10

See List of Professors in Mario Lanza University(King Abdullah University of Science and Technology)

Co-Authors

H-index: 210
Hongjie Dai

Hongjie Dai

Stanford University

H-index: 142
Prof. Jing Kong

Prof. Jing Kong

Massachusetts Institute of Technology

H-index: 128
Andrea C. Ferrari

Andrea C. Ferrari

University of Cambridge

H-index: 126
Husam N Alshareef

Husam N Alshareef

King Abdullah University of Science and Technology

H-index: 125
H.-S. Philip Wong

H.-S. Philip Wong

Stanford University

H-index: 98
xixiang zhang

xixiang zhang

King Abdullah University of Science and Technology

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