H.-S. Philip Wong
Stanford University
H-index: 125
North America-United States
Top articles of H.-S. Philip Wong
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors | Advanced Electronic Materials | Hsin‐Yuan Chiu Tzu‐Ang Chao Nathaniel S Safron Sheng‐Kai Su San‐Lin Liew | 2024/3 |
Memory array, memory structure and operation method of memory array | 2024/2/13 | ||
Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array | Advanced Materials Interfaces | Tzu‐Ang Chao Chih‐Piao Chuu San‐Lin Liew I‐Fan Hu Sheng‐Kai Su | 2024/2 |
Memory cell with built-in amplifying function, memory device and method using the same | 2022/3/10 | ||
Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory | Nature Communications | Xiangjin Wu Asir Intisar Khan Hengyuan Lee Chen-Feng Hsu Huairuo Zhang | 2024/1/22 |
Design Guidelines for Oxide Semiconductor Gain Cell Memory on a Logic Platform | IEEE Transactions on Electron Devices | Shuhan Liu Koustav Jana Kasidit Toprasertpong Jian Chen Zheng Liang | 2024/4/17 |
Forming-Free Selectors Based on Te in an Insulating SiO x Matrix | IEEE Transactions on Electron Devices | Isha M Datye Sam Vaziri Elia Ambrosi Asir Intisar Khan Heungdong Kwon | 2024/1 |
Understanding Superlattices of Sb2Te3/Ge4Sb6Te7 for Low-Power and High-Speed Phase Change Memory | Bulletin of the American Physical Society | Xiangjin Wu Asir Intisar Khan H-S Philip Wong Eric Pop | 2024/3/7 |
Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping | Nature Electronics | Zichen Zhang Matthias Passlack Gregory Pitner Shreyam Natani Sheng-Kai Su | 2023/12 |
Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping | Nathaniel Safion Hsin-Yuan Chiu Tzu-Ang Chao Sheng-Kai Su Matthias Passlack | 2023/12/9 | |
Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe2 P-Type Field-Effect Transistors | IEEE Transactions on Electron Devices | Ning Yang Yuxuan Cosmi Lin Chih-Piao Chuu M Saifur Rahman Tong Wu | 2023/2/6 |
A disposable reader-sensor solution for wireless temperature logging | Device | Siavash Kananian Jihun Rho Cheng Chen Shahab Mirjalili Alwin Daus | 2023/12/22 |
Scaled contact length with low contact resistance in monolayer 2D channel transistors | Wen-Chia Wu Terry YT Hung D Mahaveer Sathaiya Dongxu Fan Goutham Arutchelvan | 2023/6/11 | |
Recent advances and future prospects for memristive materials, devices, and systems | Min-Kyu Song Ji-Hoon Kang Xinyuan Zhang Wonjae Ji Alon Ascoli | 2023/6/29 | |
Effect of Metal Coupling on Schottky Barrier Height Extraction | Sheng-Kai Su Edward Chen Alfonso Sanchez-Soares Thomas Kelly Giorgos Fagas | 2023/9/27 | |
Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors | IEEE Transactions on Electron Devices | Wen-Chia Wu Terry YT Hung D Mahaveer Sathaiya Goutham Arutchelvan Chen-Feng Hsu | 2023/11/8 |
Technology prospects for data-intensive computing | Proceedings of the IEEE | Kerem Akarvardar H-S Philip Wong | 2023/1/11 |
Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel | Ang-Sheng Chou Ching-Hao Hsu Yu-Tung Lin Goutham Arutchelvan Edward Chen | 2023/12/9 | |
Hybrid 2T nMOS/pMOS Gain Cell Memory with Indium-tin-oxide and Carbon Nanotube MOSFETs for Counteracting Capacitive Coupling | IEEE Electron Device Letters | Shuhan Liu Shengman Li Qing Lin Koustav Jana Subhasish Mitra | 2023/12/18 |
Neural network compression for noisy storage devices | ACM Transactions on Embedded Computing Systems | Berivan Isik Kristy Choi Xin Zheng Tsachy Weissman Stefano Ermon | 2023/5/13 |
