Gerhard Rzepa
Technische Universität Wien
H-index: 22
Europe-Austria
Top articles of Gerhard Rzepa
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters | IEEE Transactions on Electron Devices | Dmitry Yakimets Krishna K Bhuwalka Hao Wu Gerhard Rzepa Markus Karner | 2024/2/27 |
Overview of Emerging Semiconductor Device Model Methodologies: From Device Physics to Machine Learning Engines | Xufan Li Zhenhua Wu Gerhard Rzepa Markus Karner Haoqing Xu | 2024/2/6 | |
Comphy v3. 0—a compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices | Microelectronics Reliability | Dominic Waldhoer Christian Schleich Jakob Michl Alexander Grill Dieter Claes | 2023/7/1 |
Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations | Materials Science Forum | Aleksandr Vasilev Maximilian Wolfgang Feil Christian Schleich Bernhard Stampfer Gerhard Rzepa | 2023/6/30 |
DTCO flow for air spacer generation and its impact on power and performance at N7 | Solid-State Electronics | Lado Filipovic Oskar Baumgartner Xaver Klemenschits Julius Piso Josip Bobinac | 2023/1/1 |
Performance and variability-aware SRAM design for Gate-All-Around nanosheets and benchmark with FinFETs at 3nm technology node | Gerhard Rzepa Krishna K Bhuwalka Oskar Baumgartner Daniele Leonelli Hui-Wen Karner | 2022/12/3 | |
Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology | Gautam Gaddemane Krishna K Bhuwalka Philippe Matagne Gerhard Rzepa Maarten Van de Put | 2022/9/19 | |
Optimization and benchmarking FinFETs and GAA nanosheet architectures at 3-nm technology node: Impact of unique boosters | IEEE Transactions on Electron Devices | Krishna K Bhuwalka Hao Wu Wenbo Zhao Gerhard Rzepa Oskar Baumgartner | 2022/6/8 |
TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs | IEEE Transactions on Electron Devices | Alexander Vasilev Markus Jech Alexander Grill Gerhard Rzepa Christian Schleich | 2022/4/19 |
Variability-aware DTCO flow: Projections to n3 FinFET and nanosheet 6T SRAM | M Karner G Rzepa O Baumgartner G Strof F Schanovsky | 2021/9/27 | |
1.5-nm node surrounding gate transistor (SGT)-SRAM cell with staggered pillar and self-aligned process for gate, bottom contact, and pillar | Yisuo Li Kenichi Kanazawa Tetsuo Izawa Koji Sakui Georg Strof | 2021/5/16 | |
A TCAD compatible SONOS trapping layer model for accurate programming dynamics | Franz Schanovsky Devin Verreck Antonio Arreghini Gerhard Rzepa Zlatan Stanojevic | 2021/5/16 | |
Reliability and variability-aware DTCO flow: Demonstration of projections to n3 FinFET and nanosheet technologies | Gerhard Rzepa Markus Karner Oskar Baumgartner Georg Strof Franz Schanovsky | 2021/3/21 | |
Understanding the ISPP slope in charge trap flash memory and its impact on 3-D NAND scaling | D Verreck A Arreghini F Schanovsky G Rzepa Z Stanojevic | 2021/12/11 | |
Impact of single-defects on the variability of CMOS inverter circuits | Microelectronics Reliability | Michael Waltl Dominic Waldhoer Konstantinos Tselios Bernhard Stampfer Christian Schleich | 2021/11/1 |
The mysterious bipolar bias temperature stress from the perspective of gate-sided hydrogen release | Tibor Grasser Ben Kaczer B O’Sullivan Gerhard Rzepa Bernhard Stampfer | 2020/4/28 | |
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors | Alexander Vasilev Markus Jech Alexander Grill Gerhard Rzepa Christian Schleich | 2020/10/4 | |
A Single-Trap Study of PBTI in SiON nMOS Transistors | Michael Waltl Bernhard Stampfer Gerhard Rzepa Ben Kaczer Tibor Grasser | 2020/10/1 | |
Performance and leakage analysis of Si and Ge NWFETs using a combined subband BTE and WKB approach | Z Stanojević G Strof O Baumgartner G Rzepa M Karner | 2020/9/23 | |
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities | IEEE Transactions on Electron Devices | Markus Jech Gunnar Rott Hans Reisinger Stanislav Tyaginov Gerhard Rzepa | 2020/6/23 |
