Satoshi Kamiyama
Meijo University
H-index: 49
Asia-Japan
Top articles of Satoshi Kamiyama
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods | physica status solidi (a) | Eri Matsubara Tomoya Omori Ryota Hasegawa Kazuki Yamada Ayumu Yabutani | 2023/8 |
Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions | physica status solidi (b) | Koji Okuno Koichi Mizutani Kazuyoshi Iida Masaki Ohya Naoki Sone | 2022/6 |
Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs | Nanophotonics | Sae Katsuro Weifang Lu Kazuma Ito Nanami Nakayama Shiori Yamamura | 2022/11/30 |
Reduction of dislocation density in lattice-relaxed Al0. 68Ga0. 32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance … | Applied Physics Express | Tomoya Omori Ayumu Yabutani Shunya Tanaka Kazuki Yamada Moe Shimokawa | 2022/3/3 |
Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency | ACS Applied Materials & Interfaces | Dong-Pyo Han Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama | 2022/5/24 |
High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning | Applied Physics Express | Kana Shibata Tsuyoshi Nagasawa Kenta Kobayashi Ruka Watanabe Takayuki Tanaka | 2022/11/1 |
Improved passivation depth of porous fluorescent 6H-SiC with Si/C faces using atomic layer deposition | Japanese Journal of Applied Physics | Kosuke Yanai Weifang Lu Yoma Yamane Keita Kodera Yiyu Ou | 2022/2/18 |
Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN | Applied Physics Express | Kanako Shojiki Moe Shimokawa Sho Iwayama Tomoya Omori Shohei Teramura | 2022/4/19 |
Superlattice-induced variations in morphological and emission properties of GaInN/GaN multiquantum nanowire-based micro-LEDs | ACS Applied Materials & Interfaces | Soma Inaba Weifang Lu Kazuma Ito Sae Katsuro Nanami Nakayama | 2022/10/27 |
MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells | Journal of Crystal Growth | Koji Okuno Koichi Mizutani Kazuyoshi Iida Masaki Ohya Naoki Sone | 2022/1/15 |
Improvement of 650-nm red-emitting GaIn0. 17N/GaIn0. 38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration | Applied Physics Letters | Ryo Takahashi Ryoto Fujiki Keisuke Hozo Ryoya Hiramatsu Makoto Matsukura | 2022/4/4 |
A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water | Applied Physics Express | Eri Matsubara Ryota Hasegawa Toma Nishibayashi Ayumu Yabutani Ryoya Yamada | 2022/10/18 |
Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs | Nanoscale Advances | Kazuma Ito Weifang Lu Sae Katsuro Renji Okuda Nanami Nakayama | 2022 |
Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼ 43 kA cm− 2) using a laser liftoff method | Applied Physics Express | Moe Shimokawa Yuya Yamada Tomoya Omori Kazuki Yamada Ryota Hasegawa | 2022/3/28 |
Hydrogen in-situ etching of GaN surface to reduce non-radiative recombination centers in 510-nm GaInN/GaN quantum-wells | Journal of Crystal Growth | Ryoto Fujiki Ryo Takahashi Ryoya Hiramatsu Keisuke Hozo Dong-Pyo Han | 2022/9/1 |
Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation | Applied Physics Letters | Ryosuke Kondo Ayumu Yabutani Tomoya Omori Kazuki Yamada Eri Matsubara | 2022/12/19 |
Recent development of UV-B laser diodes | Motoaki Iwaya Shunya Tanaka Tomoya Omori Kazuki Yamada Ryota Hasegawa | 2022/3/16 | |
AlGaN-based UV-B laser diode with a high optical confinement factor | Applied Physics Letters | Shunya Tanaka Yuya Ogino Kazuki Yamada Tomoya Omori Reo Ogura | 2021/4/19 |
Space-charge effect on photogenerated-current and-voltage in III-nitride optoelectronic semiconductors | Photonics Research | Dong-Pyo Han Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama Isamu Akasaki | 2021/9/1 |
Reduction of dislocation density in Al0. 6Ga0. 4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes | Journal of Crystal Growth | Moe Shimokawa Shohei Teramura Shunya Tanaka Tomoya Omori Kazuki Yamada | 2021/12/1 |
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