Uedono Akira
University of Tsukuba
H-index: 45
Asia-Japan
Top articles of Uedono Akira
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method | Applied Physics Letters | S. F. Chichibu K. Shima K. Kurimoto Q. Bao Y. Mikawa M. Saito | 2024/4 |
Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications | ACS Applied Electronic Materials | Koki Onishi Hayato Kitagawa Shunsuke Teranishi Akira Uedono Fumihiro Inoue | 2024/4/1 |
Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy | Applied Physics Letters | T Kimura H Shimazu K Kataoka K Itoh T Narita | 2024/1/29 |
Influence of Ge to the formation of defects in epitaxial Mg2Sn1− x Ge x thermoelectric thin films | Japanese Journal of Applied Physics | Kenneth Magallon Senados Mariana SL Lima Takashi Aizawa Isao Ohkubo Takahiro Baba | 2024/1/5 |
Low-Temperature Deposited SiO2 for Advanced Chiplet | Electrochemical Society Meeting Abstracts 244 | Hayato Kitagawa Koki Onishi Junya Fuse Akira Uedono Tomoya Iwata | 2023/12/22 |
Origin of Voids at the SiO</sub> 2<//sub>/SiO</sub> 2<//sub> and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance | Ecs Journal Of Solid State Science And Technology | F Nagano F Inoue A Phommahaxay L Peng F Chancerel | 2023/3/1 |
Inorganic Temporary Direct Bonding for Collective Die to Wafer Hybrid Bonding | Fumihiro Inoue Shunsuke Teranishi Tomoya Iwata Koki Onishi Naoko Yamamoto | 2023/5/30 | |
Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE | Materials Science in Semiconductor Processing | Kacper Sierakowski Rafal Jakiela Piotr Jaroszynski Michal Fijalkowski Tomasz Sochacki | 2023/11/15 |
Mg implantation in AlN layers on sapphire substrates | Japanese Journal of Applied Physics | Hironori Okumura Akira Uedono | 2023/2/16 |
Systematic search for stabilizing dopants in ZrO2 and HfO2 using first-principles calculations | IEEE Transactions on Semiconductor Manufacturing | Yosuke Harashima Hiroaki Koga Zeyuan Ni Takehiro Yonehara Michio Katouda | 2023/4/10 |
Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application | Japanese Journal of Applied Physics | Masatomo Sumiya Osamu Goto Yuki Takahara Yasutaka Imanaka Liwen Sang | 2023/8/1 |
Precipitation Behavior in Low-alloyed Mg–Ca–Zn Alloys | ZH Li TT Sasaki D Cheng K Wang BC Zhou | 2023/2/6 | |
Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures | Shigefusa F Chichibu Kohei Shima Hiroko Iguchi Tetsuo Narita Keita Kataoka | 2023/3/17 | |
Finite temperature effects on the structural stability of Si-doped HfO2 using first-principles calculations | Applied Physics Letters | Yosuke Harashima Hiroaki Koga Zeyuan Ni Takehiro Yonehara Michio Katouda | 2023/6/26 |
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam | Akira Uedono Hideki Sakurai Jun Uzuhashi Tetsuo Narita Kacper Sierakowski | 2023/3/15 | |
Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam | Journal of Applied Physics | Akira Uedono Yasuki Kimura Takuya Hoshii Kuniyuki Kakushima Masatomo Sumiya | 2023/6/14 |
A Comprehensive Study on Chemical Bonding and Open Spaces with Silicon Carbon Nitride Films for Direct Bonding | Electrochemical Society Meeting Abstracts 244 | Sodai Ebiko Koki Onishi Akira Uedono Serena Iacovo Fumihiro Inoue | 2023/12/22 |
Origin of voids at the SiO2/SiO2 and SiCN/SiCN bonding interface using positron annihilation spectroscopy and electron spin resonance | ECS Journal of Solid State Science and Technology | F Nagano F Inoue A Phommahaxay L Peng F Chancerel | 2023/3/2 |
Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N | K Shima R Tanaka S Takashima K Ueno M Edo | 2023/6/8 | |
Negatively charged boron vacancy center in diamond | Physical Review B | T Umeda K Watanabe H Hara H Sumiya S Onoda | 2022/4/4 |
Co-Authors
