Motoaki Iwaya

Motoaki Iwaya

Meijo University

H-index: 49

Asia-Japan

About Motoaki Iwaya

Motoaki Iwaya, With an exceptional h-index of 49 and a recent h-index of 28 (since 2020), a distinguished researcher at Meijo University, specializes in the field of Semiconductor device, Nitride semiconductor, LED, laser diode, crystal growth.

His recent articles reflect a diverse array of research interests and contributions to the field:

Fabrication of Vertical AlGaN-Based Ultraviolet-B Laser Diodes Using a Substrate Exfoliation Method with Water

Fabrication and characterizations of GaN-based nanowire/multi-quantum shell (MQS) LEDs

Enhancing the optical properties of organic fluorine compound-encapsulated AlGaN-based ultraviolet light-emitting diodes with Ni/Au reflective electrodes

Characteristics of Stacked GaInN‐Based Red, Green, and Blue Full‐Color Monolithic μLED Arrays Connected via Tunnel Junctions

Laminate and method of manufacturing laminate

Novel UV‐B Phototherapy With a Light‐Emitting Diode Device Prevents Atherosclerosis by Augmenting Regulatory T‐Cell Responses in Mice

In-situ structural controls during the GaN-based VCSEL growths

Effect of Wet Etching on AlGaN‐Based Ultraviolet‐B Laser Diodes Grown on Wet‐Etched Periodic AlN Nanopillars

Motoaki Iwaya Information

University

Position

___

Citations(all)

9557

Citations(since 2020)

3772

Cited By

7324

hIndex(all)

49

hIndex(since 2020)

28

i10Index(all)

220

i10Index(since 2020)

120

Email

University Profile Page

Meijo University

Google Scholar

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Motoaki Iwaya Skills & Research Interests

Semiconductor device

Nitride semiconductor

LED

laser diode

crystal growth

Top articles of Motoaki Iwaya

Title

Journal

Author(s)

Publication Date

Fabrication of Vertical AlGaN-Based Ultraviolet-B Laser Diodes Using a Substrate Exfoliation Method with Water

Applied Physics Express

Toma Nishibayashi

Ryosuke Kondo

Eri Matsubara

Ryoya Yamada

Yoshinori Imoto

...

2023/10/26

Fabrication and characterizations of GaN-based nanowire/multi-quantum shell (MQS) LEDs

Satoshi Kamiyama

Tetsuya Takeuchi

Motoaki Iwaya

2024/3/13

Enhancing the optical properties of organic fluorine compound-encapsulated AlGaN-based ultraviolet light-emitting diodes with Ni/Au reflective electrodes

Japanese Journal of Applied Physics

Koji Okuno

Rie Iwatsuki

Koichi Mizutani

Masaki Ohya

Yoshiki Saito

...

2024/2/21

Characteristics of Stacked GaInN‐Based Red, Green, and Blue Full‐Color Monolithic μLED Arrays Connected via Tunnel Junctions

physica status solidi (a)

Tatsunari Saito

Naoki Hasegawa

Yoshinobu Suehiro

Norikatsu Koide

Tetsuya Takeuchi

...

2024/3/12

Laminate and method of manufacturing laminate

2024/4/4

Novel UV‐B Phototherapy With a Light‐Emitting Diode Device Prevents Atherosclerosis by Augmenting Regulatory T‐Cell Responses in Mice

Journal of the American Heart Association

Toru Tanaka

Naoto Sasaki

Aga Krisnanda

Masakazu Shinohara

Hilman Zulkifli Amin

...

2024/1/16

In-situ structural controls during the GaN-based VCSEL growths

Tetsuya Takeuchi

Satoshi Kamiyama

Motoaki Iwaya

2024/3/9

Effect of Wet Etching on AlGaN‐Based Ultraviolet‐B Laser Diodes Grown on Wet‐Etched Periodic AlN Nanopillars

physica status solidi (a)

Yoshinori Imoto

Ryota Hasegawa

Ayumu Yabutani

Ryosuke Kondo

Toma Nishibayashi

...

2024/4/1

Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs

Nanoscale Advances

Soma Inaba

Weifang Lu

Ayaka Shima

Shiori Ii

Mizuki Takahashi

...

2024

Progress in UV-B laser diodes on lattice-relaxed high-quality AlGaN fabricated on sapphire substrates

Motoaki Iwaya

Sho Iwayama

Tetsuya Takeuchi

Satoshi Kamiyama

Hideto Miyake

2024/3/9

Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser

Applied Physics Letters

Ruka Watanabe

Kenta Kobayashi

Mitsuki Yanagawa

Tetsuya Takeuchi

Satoshi Kamiyama

...

2024/3/25

LED ARRAY

2024/2/29

Effect of Polarization‐Charge Modulation on the Carrier‐Injection Efficiency of AlGaN‐Based Ultraviolet‐B Laser Diodes Using Polarization Doping in the p‐Type AlGaN Cladding Layer

physica status solidi (a)

Ryosuke Kondo

Eri Matsubara

Toma Nishibayashi

Ryoya Yamada

Yoshinori Imoto

...

2024/3/25

RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

Applied Physics Express

Tatsunari Saito

Naoki Hasegawa

Keigo Imura

Yoshinobu Suehiro

Tetsuya Takeuchi

...

2023/8/17

The properties of UV-B laser diodes on AlN nanopillars by using wet etching method

IEICE Technical Report; IEICE Tech. Rep.

Yoshinori Imoto

Ryosuke Kondo

Ryoya Yamada

Koki Hattori

Toma Nishibayashi

...

2023/11/23

蛍光 4H-SiC の結晶成長圧力制御による発光強度分布改善

Syota Akiyoshi

Taisei Mizuno

S Kamiyama

Motoaki Iwaya

Tetsuya Takeuchi

...

2023

Development of AlGaN-based laser diodes in the UV-A to UV-B regions

Motoaki Iwaya

Sho Iwayama

Tetsuya Takeuchi

Satoshi Kamiyama

Hideto Miyake

2023/3/17

MOVPE-growth of conductive AlInN/GaN DBRs towards GaN-based VCSELs

Tetsuya Takeuchi

Satoshi Kamiyama

Motoaki Iwaya

2023/3/17

Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications

physica status solidi (a)

Ayumu Yabutani

Ryota Hasegawa

Ryosuke Kondo

Eri Matsubara

Daichi Imai

...

2023/8

Exfoliation mechanism of AlGaN-based thin films using heated-pressurized water

Applied Physics Express

Ryoya Yamada

Eri Matsubara

Ryosuke Kondo

Toma Nishibayashi

Koki Hattori

...

2023/10/11

See List of Professors in Motoaki Iwaya University(Meijo University)

Co-Authors

H-index: 108
Hiroshi AMANO  (天野 浩)

Hiroshi AMANO (天野 浩)

Nagoya University

H-index: 66
Fernando Ponce

Fernando Ponce

Arizona State University

H-index: 49
Satoshi Kamiyama

Satoshi Kamiyama

Meijo University

H-index: 42
Tania Paskova

Tania Paskova

North Carolina State University

H-index: 40
Hideto Miyake

Hideto Miyake

Mie University

H-index: 37
Galia Pozina

Galia Pozina

Linköpings Universitet

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