Hideto Miyake

Hideto Miyake

Mie University

H-index: 40

Asia-Japan

About Hideto Miyake

Hideto Miyake, With an exceptional h-index of 40 and a recent h-index of 27 (since 2020), a distinguished researcher at Mie University, specializes in the field of Nitride.

His recent articles reflect a diverse array of research interests and contributions to the field:

Progress in UV-B laser diodes on lattice-relaxed high-quality AlGaN fabricated on sapphire substrates

Temperature‐and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD

Fabrication of Vertical AlGaN-Based Ultraviolet-B Laser Diodes Using a Substrate Exfoliation Method with Water

Effect of Wet Etching on AlGaN‐Based Ultraviolet‐B Laser Diodes Grown on Wet‐Etched Periodic AlN Nanopillars

Optical activation of implanted lanthanoid ions in aluminum nitride semiconductors by high temperature annealing

Effect of Polarization‐Charge Modulation on the Carrier‐Injection Efficiency of AlGaN‐Based Ultraviolet‐B Laser Diodes Using Polarization Doping in the p‐Type AlGaN Cladding Layer

Growth of thick GaN films on 2-inch ScAlMgO4 substrates by halide vapor phase epitaxy

Hideto Miyake Information

University

Position

___

Citations(all)

7492

Citations(since 2020)

3289

Cited By

5310

hIndex(all)

40

hIndex(since 2020)

27

i10Index(all)

181

i10Index(since 2020)

78

Email

University Profile Page

Mie University

Google Scholar

View Google Scholar Profile

Hideto Miyake Skills & Research Interests

Nitride

Top articles of Hideto Miyake

Title

Journal

Author(s)

Publication Date

Progress in UV-B laser diodes on lattice-relaxed high-quality AlGaN fabricated on sapphire substrates

Motoaki Iwaya

Sho Iwayama

Tetsuya Takeuchi

Satoshi Kamiyama

Hideto Miyake

2024/3/9

Temperature‐and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

physica status solidi (b)

Hideaki Murotani

Kosuke Inai

Kunio Himeno

Kaichi Tani

Hiromasa Hayashi

...

2024/4/1

Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD

Junya Yoshinaga

Keitaro Ikejiri

Shuichi Koseki

Kenjiro Uesugi

Hideto Miyake

2024/3/8

Fabrication of Vertical AlGaN-Based Ultraviolet-B Laser Diodes Using a Substrate Exfoliation Method with Water

Applied Physics Express

Toma Nishibayashi

Ryosuke Kondo

Eri Matsubara

Ryoya Yamada

Yoshinori Imoto

...

2023/10/26

Effect of Wet Etching on AlGaN‐Based Ultraviolet‐B Laser Diodes Grown on Wet‐Etched Periodic AlN Nanopillars

physica status solidi (a)

Yoshinori Imoto

Ryota Hasegawa

Ayumu Yabutani

Ryosuke Kondo

Toma Nishibayashi

...

2024/4/1

Optical activation of implanted lanthanoid ions in aluminum nitride semiconductors by high temperature annealing

Optical Materials Express

Shin-ichiro Sato

Kanako Shojiki

Ken-ichi Yoshida

Hideaki Minagawa

Hideto Miyake

2024/2/1

Effect of Polarization‐Charge Modulation on the Carrier‐Injection Efficiency of AlGaN‐Based Ultraviolet‐B Laser Diodes Using Polarization Doping in the p‐Type AlGaN Cladding Layer

physica status solidi (a)

Ryosuke Kondo

Eri Matsubara

Toma Nishibayashi

Ryoya Yamada

Yoshinori Imoto

...

2024/3/25

Growth of thick GaN films on 2-inch ScAlMgO4 substrates by halide vapor phase epitaxy

Journal of Crystal Growth

Haitao Zhang

Shoma Takeda

Hideto Miyake

2024/1/1

Fabrication of deep UV LEDs with a high-quality AlGaN on face-to-face annealed sputter-deposited AlN template

Hideto Miyake

Kenjiro Uesugi

Takao Nakamura

2024/3/9

Exfoliation mechanism of AlGaN-based thin films using heated-pressurized water

Applied Physics Express

Ryoya Yamada

Eri Matsubara

Ryosuke Kondo

Toma Nishibayashi

Koki Hattori

...

2023/10/11

Fabrication of vertical AlGaN-based UV-B LD

IEICE Technical Report; IEICE Tech. Rep.

Toma Nishibayashi

Ryosuke Kondo

Eri Matsubara

Ryoya Yamada

Yoshinori Imoto

...

2023/11/23

Fabrication of 265 nm LED on face-to-face annealed sputter-deposited AlN/sapphire

Hideto Miyake

2023/3/17

Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods

physica status solidi (a)

Eri Matsubara

Tomoya Omori

Ryota Hasegawa

Kazuki Yamada

Ayumu Yabutani

...

2023/8

UV-B laser diodes fabricated on lattice relaxed high quality AlGaN templates

Motoaki Iwaya

Sho Iwayama

Tetsuya Takeuchi

Satoshi Kamiyama

Hideto Miyake

2023/10/5

The properties of UV-B laser diodes on AlN nanopillars by using wet etching method

IEICE Technical Report; IEICE Tech. Rep.

Yoshinori Imoto

Ryosuke Kondo

Ryoya Yamada

Koki Hattori

Toma Nishibayashi

...

2023/11/23

Fabrication of vertical UV light-emitting devices by separation of sapphire substrates (Conference Presentation)

Motoaki Iwaya

Toma Nishibayashi

Moe Shimokawa

Ryota Hasegawa

Eri Matsubara

...

2023/3/17

229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide

Applied Physics Express

Hiroto Honda

Soshi Umeda

Kanako Shojiki

Hideto Miyake

Shuhei Ichikawa

...

2023/6/19

Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates

physica status solidi (b)

Naoya Mokutani

Momoko Deura

Shinichiro Mouri

Kanako Shojiki

Shiyu Xiao

...

2023/9

Search for Charged Excited States of Dark Matter with KamLAND-Zen

arXiv preprint arXiv:2311.09676

S Abe

M Eizuka

S Futagi

A Gando

Y Gando

...

2023/11/16

Development of AlGaN-based laser diodes in the UV-A to UV-B regions

Motoaki Iwaya

Sho Iwayama

Tetsuya Takeuchi

Satoshi Kamiyama

Hideto Miyake

2023/3/17

See List of Professors in Hideto Miyake University(Mie University)