Fernando Ponce
Arizona State University
H-index: 66
North America-United States
Top articles of Fernando Ponce
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications | IEEE Transactions on Electron Devices | Kai Fu Shisong Luo Houqiang Fu Kevin Hatch Shanthan Reddy Alugubelli | 2023/10/10 |
Exploring the Effect of Diffraction Conditions on Off-Axis Phonon EELS | Yifan Wang Shize Yang Alec Fischer Timothy Grotjohn Fernando Ponce | 2023/8/1 | |
Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness | Journal of Crystal Growth | Yuto Ando Frank Mehnke Henri Bouchard Zhiyu Xu Alec M Fischer | 2023/4/1 |
The effect of step-flow growth on the surface morphology and optical properties of thick diamond films | Diamond and Related Materials | AM Fischer A Bhattacharya A Hardy TA Grotjohn FA Ponce | 2023/12/1 |
Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD | Nano Studies | R Dupuis J Kim M Ji Y Liu Th Detchprohm | 2022 |
High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach | Russell D Dupuis Frank Mehnke Alec M Fischer Zhiyu Xu Henri K Bouchard | 2022/3/5 | |
Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness | Journal of Applied Physics | Frank Mehnke Alec M Fischer Zhiyu Xu Henri Bouchard Theeradetch Detchprohm | 2022/2/21 |
Nanostructured materials for high efficiency solar cells | Daniel N Micha Roberto Jakomin Rudy MS Kawabata Mauricio P Pires Fernando A Ponce | 2021/1/1 | |
Microstructure of Epitaxial III–V Nitride Thin Films | Fernando A Ponce | 2021/10/8 | |
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress | Houqiang Fu Kai Fu Chen Yang Hanxiao Liu Kevin A Hatch | 2021/10/1 | |
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices | Applied Physics Letters | Kai Fu Houqiang Fu Xuguang Deng Po-Yi Su Hanxiao Liu | 2021/5/31 |
High resolution TEM of hydrogen-induced microdefects in silicon | FA Ponce NM Johnson JC Tramontana J Walker | 2021/1/31 | |
Modeling of impact ionization and charge trapping in SuperCDMS HVeV detectors | Journal of Low Temperature Physics | F Ponce W Page PL Brink B Cabrera M Cherry | 2020/5 |
Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films | Applied Physics Letters | Po-Yi Su Hanxiao Liu Chen Yang Kai Fu Houqiang Fu | 2020/9/8 |
Investigation of polycrystalline GaxIn1− xP for potential use as a solar cell absorber with tunable bandgap | Journal of Applied Physics | Abhinav Chikhalkar Abhinandan Gangopadhyay Hanxiao Liu Chaomin Zhang Fernando A Ponce | 2020/2/21 |
Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices | Semiconductor Science and Technology | Kai Fu Xin Qi Houqiang Fu Po-Yi Su Hanxiao Liu | 2020/11/25 |
The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers | Journal of Applied Physics | Po-Yi Su Hanxiao Liu Shuo Wang Zhihao Wu Rong Liu | 2020/8/7 |
High-field spatial imaging of charge transport in silicon at low temperature | AIP Advances | C Stanford RA Moffatt NA Kurinsky PL Brink B Cabrera | 2020/2/1 |
High resolution electron microscopy of II–VI compound semiconductors | R Sinclair FA Ponce T Yamashita David J Smith | 2020/11/25 | |
GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD | IEEE Transactions on Electron Devices | Chen Yang Houqiang Fu Viswanathan Naveen Kumar Kai Fu Hanxiao Liu | 2020/8/5 |
Co-Authors
