Suda Jun
Nagoya University
H-index: 47
Asia-Japan
Top articles of Suda Jun
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Demonstration of AlGaN-on-AlN pn Diodes With Dopant-Free Distributed Polarization Doping | IEEE Transactions on Electron Devices | Takeru Kumabe Akira Yoshikawa Seiya Kawasaki Maki Kushimoto Yoshio Honda | 2024/2/26 |
Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer | IEEE Transactions on Electron Devices | Yuji Ando Kensuke Oishi Hidemasa Takahashi Ryutaro Makisako Akio Wakejima | 2024/4/1 |
Electrical characterization of AlGaN/GaN-HEMTs on semi-insulating GaN substrates doped with Fe, C, or Mn and grown by hydride vapor phase epitaxy | Journal of Electron Devices | H Mosbahi M Gassoumi H Mejri MA Zaidi Christophe Gaquière | 2012 |
Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs | Applied Physics Express | Takashi Ishida Takashi Ushijima Shosuke Nakabayashi Kozo Kato Takayuki Koyama | 2024/2/6 |
Suppression of threshold voltage shift due to positive bias stress in GaN planar MOSFETs by post-deposition annealing | Japanese Journal of Applied Physics | Yuki Ichikawa Katsunori Ueno Tsurugi Kondo Ryo Tanaka Shinya Takashima | 2024/1/4 |
Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n-and p-/n+ junctions | Tetsuo Narita Masakazu Kanechika Kazuyoshi Tomita Yoshitaka Nagasato Takeshi Kondo | 2024/3/9 | |
Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers | Applied Physics Express | Meguru Endo Masahiro Horita Jun Suda | 2024/1/3 |
Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications | IEEE Transactions on Electron Devices | Matteo Meneghini Geok Ing Ng Farid Medjdoub Matteo Buffolo Shireen Warnock | 2024/3/1 |
Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse | Applied Physics Letters | Shota Kaneki Taichiro Konno Takeshi Kimura Kazutaka Kanegae Jun Suda | 2024/1/1 |
Realization of low specific-contact-resistance on N-polar GaN surface using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique | Applied Physics Express | Shinji Yamada Masanori Shirai Hiroki Kobayashi Manabu Arai Tetsu Kachi | 2024/3/1 |
Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures | Shigefusa F Chichibu Kohei Shima Hiroko Iguchi Tetsuo Narita Keita Kataoka | 2023/3/17 | |
Correlation between non-ionizing energy loss and production rate of electron trap at EC−(0.12–0.20) eV formed in gallium nitride by various types of radiation | Applied Physics Letters | Keito Aoshima Masahiro Horita Jun Suda | 2023/1/2 |
High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3 | Applied Physics Express | Koji Ito Masahiro Horita Jun Suda Tsunenobu Kimoto | 2023/7/7 |
Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition | Kenji Ito Tetsuo Narita Hiroko Iguchi Shiro Iwasaki Daigo Kikuta | 2023/12/9 | |
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam | Akira Uedono Hideki Sakurai Jun Uzuhashi Tetsuo Narita Kacper Sierakowski | 2023/3/15 | |
Prospects of mist CVD for fabrication of β-Ga₂O₃ MESFETs on β-Ga₂O₃ (010) substrates | Applied Physics Express | Hitoshi Takane Yuji Ando Hidemasa Takahashi Ryutaro Makisako Hikaru Ikeda | 2023 |
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs | Ryo Tanaka Shinya Takashima Katsunori Ueno Masahiro Horita Jun Suda | 2023/6/8 | |
Demonstration of AlN-based Vertical pn Diodes with Dopant-Free Distributed-Polarization Doping | Takeru Kumabe Akira Yoshikawa M Kushimoto Y Honda M Arai | 2023/12/9 | |
Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions | Applied Physics Letters | Tetsuo Narita Masakazu Kanechika Kazuyoshi Tomita Yoshitaka Nagasato Takeshi Kondo | 2023/3/13 |
RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography | Electronics Letters | Yuji Ando Hidemasa Takahashi Ryutaro Makisako Akio Wakejima Jun Suda | 2023/5 |
