Francesco Maria Puglisi

About Francesco Maria Puglisi

Francesco Maria Puglisi, With an exceptional h-index of 27 and a recent h-index of 22 (since 2020), a distinguished researcher at Università degli Studi di Modena e Reggio Emilia, specializes in the field of Micro and Nanoelectronics, Non-volatile Memories, RRAM, Noise, Reliability and Variability.

His recent articles reflect a diverse array of research interests and contributions to the field:

Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators

From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks

Information Transfer in Neuronal Circuits: From Biological Neurons to Neuromorphic Electronics

Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture

Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals

Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model

Biologically plausible information propagation in a complementary metal-oxide semiconductor integrate-and-fire artificial neuron circuit with memristive synapses

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Francesco Maria Puglisi Information

University

Position

Associate Professor of Electronics

Citations(all)

3291

Citations(since 2020)

2650

Cited By

1418

hIndex(all)

27

hIndex(since 2020)

22

i10Index(all)

65

i10Index(since 2020)

56

Email

University Profile Page

Università degli Studi di Modena e Reggio Emilia

Google Scholar

View Google Scholar Profile

Francesco Maria Puglisi Skills & Research Interests

Micro and Nanoelectronics

Non-volatile Memories

RRAM

Noise

Reliability and Variability

Top articles of Francesco Maria Puglisi

Title

Journal

Author(s)

Publication Date

Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators

IEEE Transactions on Device and Materials Reliability

Tommaso Zanotti

Alok Ranjan

Sean J O’Shea

Nagarajan Raghavan

Ramesh Thamankar

...

2024/4/29

From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks

IEEE Transactions on Device and Materials Reliability

Sara Vecchi

Andrea Padovani

Paolo Pavan

Francesco Maria Puglisi

2024/4/1

Information Transfer in Neuronal Circuits: From Biological Neurons to Neuromorphic Electronics

Intelligent Computing

Daniela Gandolfi

Lorenzo Benatti

Tommaso Zanotti

Giulia M Boiani

Albertino Bigiani

...

2024/2/1

Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture

Microelectronic Engineering

Lorenzo Benatti

Tommaso Zanotti

Paolo Pavan

Francesco Maria Puglisi

2023/8/15

Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals

Journal of Applied Physics

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2023/3/21

Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model

Tommaso Zanotti

Paolo Pavan

Francesco Maria Puglisi

2023/3/13

Biologically plausible information propagation in a complementary metal-oxide semiconductor integrate-and-fire artificial neuron circuit with memristive synapses

Nano Futures

Lorenzo Benatti

Tommaso Zanotti

Daniela Gandolfi

Jonathan Mapelli

Francesco Maria Puglisi

2023/5/26

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Nicolò Zagni

Francesco Maria Puglisi

Paolo Pavan

Muhammad Ashraful Alam

2023/2/1

The role of defects and interface degradation on ferroelectric HZO capacitors aging

Lorenzo Benatti

Sara Vecchi

Milan Pesic

Francesco Maria Puglisi

2023/3/26

A unified framework to explain random telegraph noise complexity in MOSFETs and RRAMs

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2023/3/26

Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

Nanoscale

Sebastian Pazos

Wenwen Zheng

Tommaso Zanotti

Fernando Aguirre

Thales Becker

...

2023

Reliability Analysis of Random Telegraph Noisebased True Random Number Generators

Tommaso Zanotti

Alok Ranjan

Sean J O’Shea

Nagarajan Raghavan

Ramesh Thamankar

...

2023/10/8

Linking the intrinsic electrical response of ferroelectric devices to material properties by means of impedance spectroscopy

IEEE Transactions on Device and Materials Reliability

Lorenzo Benatti

Sara Vecchi

Francesco Maria Puglisi

2023/3/24

The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation

Sara Vecchi

Andrea Padovani

Paolo Pavan

Francesco Maria Puglisi

2023/10/8

Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights

Neuromorphic Computing and Engineering

Laura Bégon-Lours

Mattia Halter

Marilyne Sousa

Youri Popoff

Diana Dávila Pineda

...

2022/3/25

Defects motion as the key source of random telegraph noise instability in hafnium oxide

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2022/9/19

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

Mario Lanza

Abu Sebastian

Wei D Lu

Manuel Le Gallo

Meng-Fan Chang

...

2022/6/3

The impact of electrostatic interactions between defects on the characteristics of random telegraph noise

IEEE Transactions on Electron Devices

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2022/10/20

Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware

Advanced Electronic Materials

Laura Bégon‐Lours

Mattia Halter

Francesco Maria Puglisi

Lorenzo Benatti

Donato Francesco Falcone

...

2022/6

A hybrid cmos-memristor spiking neural network supporting multiple learning rules

IEEE Transactions on Neural Networks and Learning Systems

Davide Florini

Daniela Gandolfi

Jonathan Mapelli

Lorenzo Benatti

Paolo Pavan

...

2022/9/13

See List of Professors in Francesco Maria Puglisi University(Università degli Studi di Modena e Reggio Emilia)

Co-Authors

H-index: 93
Eric Pop

Eric Pop

Stanford University

H-index: 53
Luca LARCHER

Luca LARCHER

Università degli Studi di Modena e Reggio Emilia

H-index: 47
Mario Lanza

Mario Lanza

King Abdullah University of Science and Technology

H-index: 37
Juan B. Roldán

Juan B. Roldán

Universidad de Granada

H-index: 35
Alessandro Chini

Alessandro Chini

Università degli Studi di Modena e Reggio Emilia

H-index: 35
Paolo PAVAN

Paolo PAVAN

Università degli Studi di Modena e Reggio Emilia

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