Luca LARCHER

About Luca LARCHER

Luca LARCHER, With an exceptional h-index of 53 and a recent h-index of 31 (since 2020), a distinguished researcher at Università degli Studi di Modena e Reggio Emilia,

His recent articles reflect a diverse array of research interests and contributions to the field:

Device‐to‐materials pathway for electron traps detection in amorphous GeSe‐based selectors

A Multiscale-Multiphysics simulation platform for technology virtualization: from process chamber modeling to device electrical prediction

Supporting Information for Adv. Electron. Mater

Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND

Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures

Impact of Poly-Si channel: Multiscale modeling insight from first-principles to device simulation

Towards a universal model of dielectric breakdown

Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics

Luca LARCHER Information

University

Position

Applied Materials -

Citations(all)

10223

Citations(since 2020)

4835

Cited By

7215

hIndex(all)

53

hIndex(since 2020)

31

i10Index(all)

173

i10Index(since 2020)

98

Email

University Profile Page

Università degli Studi di Modena e Reggio Emilia

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Top articles of Luca LARCHER

Title

Journal

Author(s)

Publication Date

Device‐to‐materials pathway for electron traps detection in amorphous GeSe‐based selectors

Advanced Electronic Materials

Amine Slassi

Linda‐Sheila Medondjio

Andrea Padovani

Francesco Tavanti

Xu He

...

2023/4

A Multiscale-Multiphysics simulation platform for technology virtualization: from process chamber modeling to device electrical prediction

L Larcher

F Nardi

V Milo

U Kelkar

P Stout

...

2023/10/22

Supporting Information for Adv. Electron. Mater

Amine Slassi

Linda-Sheila Medondjio

Andrea Padovani

Francesco Tavanti

Xu He

...

2023

Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND

Milan Pesic

Bastien Beltrando

Tommaso Rollo

Cristian Zambelli

Andrea Padovani

...

2023/3/26

Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures

Paolo La Torraca

Andrea Padovani

Lars-Erik Wernersson

Karim Cherkaoui

Paul Hurley

...

2023/10/8

Impact of Poly-Si channel: Multiscale modeling insight from first-principles to device simulation

APS March Meeting Abstracts

Rita Maji

Tommaso Rollo

Shruba Gangopadhyay

Milan Pesic

Luca Larcher

...

2023

Towards a universal model of dielectric breakdown

Andrea Padovani

Paolo La Torraca

Jack Strand

Alexander Shluger

Valerio Milo

...

2023/3/26

Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics

Andrea Padovani

Paolo La Torraca

Luca Larcher

Jack Strand

Alexander Shluger

2023/9/27

Impact of Device Geometry, Physical Doping and Electrostatic Doping on the Frequency CV-dispersion of TFT Devices with IWO Channels

Andrea Palmieri

Karim Cherkaoui

Khandker Akif Aabrar

Yaoqiao Hu

Luca Larcher

...

2023/3/7

High-k/InGaAs interface defects at cryogenic temperature

Solid-State Electronics

Karim Cherkaoui

P La Torraca

J Lin

N Maraviglia

A Andersen

...

2023/9/1

Controlling positive feedback in filamentary

2023/12/19

Amplifier for driving a capacitive load

2023/2/21

Simulation of atomistic defects in nanoelectronics using polyhedral meshes

2023/8/17

The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers

IEEE Electron Device Letters

P La Torraca

A Padovani

J Strand

A Shluger

L Larcher

2023/11/30

A HydroDynamic model for trap-assisted tunneling conduction in ovonic devices

IEEE Transactions on Electron Devices

F Buscemi

E Piccinini

L Vandelli

F Nardi

A Padovani

...

2023/2/9

Controlling positive feedback in filamentary RRAM structures

2022/5/3

The electrons' journey in thick metal oxides

Applied Physics Letters

Francesco Caruso

Paolo La Torraca

Luca Larcher

Graziella Tallarida

Sabina Spiga

2022/7/4

Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors

IEEE Transactions on Electron Devices

Puyang Cai

Hao Li

Zhiwei Liu

Tianxiang Zhu

Min Zeng

...

2022/4/6

Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation

Journal of Applied Physics

Jack Strand

Paolo La Torraca

Andrea Padovani

Luca Larcher

Alexander L Shluger

2022/6/21

Electron-assisted switching in FeFETs: Memory window dynamics–retention–trapping mechanisms and correlation

Milan Pešić

Bastien Beltrando

Andrea Padovani

Toshihiko Miyashita

Nam-Sung Kim

...

2022/3/27

See List of Professors in Luca LARCHER University(Università degli Studi di Modena e Reggio Emilia)