Paolo PAVAN

About Paolo PAVAN

Paolo PAVAN, With an exceptional h-index of 35 and a recent h-index of 21 (since 2020), a distinguished researcher at Università degli Studi di Modena e Reggio Emilia,

His recent articles reflect a diverse array of research interests and contributions to the field:

Unobtrusive Multimodal Monitoring of Physiological Signals for Driver State Analysis

From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

ANGELS-Smart Steering Wheel for Driver Safety

Driver drowsiness detection: a machine learning approach on skin conductance

A unified framework to explain random telegraph noise complexity in MOSFETs and RRAMs

Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical AlO/GaN MOS Capacitors

Paolo PAVAN Information

University

Position

Professor of Electronics

Citations(all)

7016

Citations(since 2020)

2344

Cited By

5473

hIndex(all)

35

hIndex(since 2020)

21

i10Index(all)

126

i10Index(since 2020)

65

Email

University Profile Page

Università degli Studi di Modena e Reggio Emilia

Google Scholar

View Google Scholar Profile

Top articles of Paolo PAVAN

Title

Journal

Author(s)

Publication Date

Unobtrusive Multimodal Monitoring of Physiological Signals for Driver State Analysis

IEEE Sensors Journal

Andrea Amidei

Pierangelo Maria Rapa

Giuseppe Tagliavini

Roberto Rabbeni

Luca Benini

...

2024/4/11

From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks

IEEE Transactions on Device and Materials Reliability

Sara Vecchi

Andrea Padovani

Paolo Pavan

Francesco Maria Puglisi

2024/4/1

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Journal of Semiconductors

Nicolò Zagni

Manuel Fregolent

Andrea Del Fiol

Davide Favero

Francesco Bergamin

...

2024

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Nicolò Zagni

Francesco Maria Puglisi

Paolo Pavan

Muhammad Ashraful Alam

2023/2/1

ANGELS-Smart Steering Wheel for Driver Safety

Andrea Amidei

Pierangelo Maria Rapa

Giuseppe Tagliavini

Roberto Rabbeni

Paolo Pavan

...

2023/6/8

Driver drowsiness detection: a machine learning approach on skin conductance

Sensors

Andrea Amidei

Susanna Spinsante

Grazia Iadarola

Simone Benatti

Federico Tramarin

...

2023/4/15

A unified framework to explain random telegraph noise complexity in MOSFETs and RRAMs

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2023/3/26

Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical AlO/GaN MOS Capacitors

IEEE Transactions on Electron Devices

Nicolò Zagni

Manuel Fregolent

Giovanni Verzellesi

Alberto Marcuzzi

Carlo De Santi

...

2023/11/27

Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals

Journal of Applied Physics

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2023/3/21

The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation

Sara Vecchi

Andrea Padovani

Paolo Pavan

Francesco Maria Puglisi

2023/10/8

Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model

Tommaso Zanotti

Paolo Pavan

Francesco Maria Puglisi

2023/3/13

Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture

Microelectronic Engineering

Lorenzo Benatti

Tommaso Zanotti

Paolo Pavan

Francesco Maria Puglisi

2023/8/15

Combining experiments and a novel small signal model to investigate the degradation mechanisms in ferroelectric tunnel junctions

Lorenzo Benatti

Paolo Pavan

Francesco Maria Puglisi

2022/3/27

Defects motion as the key source of random telegraph noise instability in hafnium oxide

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2022/9/19

The relevance of trapped charge for leakage and random telegraph noise phenomena

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2022/3/27

A hybrid cmos-memristor spiking neural network supporting multiple learning rules

IEEE Transactions on Neural Networks and Learning Systems

Davide Florini

Daniela Gandolfi

Jonathan Mapelli

Lorenzo Benatti

Paolo Pavan

...

2022/9/13

Exploiting blood volume pulse and skin conductance for driver drowsiness detection

Angelica Poli

Andrea Amidei

Simone Benatti

Grazia Iadarola

Federico Tramarin

...

2022/11/16

Smart material implication using spin-transfer torque magnetic tunnel junctions for logic-in-memory computing

Solid-State Electronics

Raffaele De Rose

Tommaso Zanotti

Francesco Maria Puglisi

Felice Crupi

Paolo Pavan

...

2022/8/1

The impact of electrostatic interactions between defects on the characteristics of random telegraph noise

IEEE Transactions on Electron Devices

Sara Vecchi

Paolo Pavan

Francesco Maria Puglisi

2022/10/20

Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy

ACS Applied Electronic Materials

Alok Ranjan

Francesco Maria Puglisi

Joel Molina-Reyes

Paolo Pavan

Sean J O’Shea

...

2022/7/19

See List of Professors in Paolo PAVAN University(Università degli Studi di Modena e Reggio Emilia)