Juan B. Roldán

About Juan B. Roldán

Juan B. Roldán, With an exceptional h-index of 37 and a recent h-index of 27 (since 2020), a distinguished researcher at Universidad de Granada, specializes in the field of Nanoelectronics, RRAMs, Memristors, Circuit and electron device simulation, Electron device compact modeling.

His recent articles reflect a diverse array of research interests and contributions to the field:

Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

Stochastic resonance in 2D materials based memristors

Different PCA approaches for vector functional time series with applications to resistive switching processes

Hysteresis in memristors produces a conduction inductance and a conduction capacitance effects

Non-uniform WENO-based quasi-interpolating splines from the Bernstein-Bézier representation and applications

3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach

Hardware implementation of memristor-based artificial neural networks

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Juan B. Roldán Information

University

Position

Department of Electronics and Computer Technology. (Spain)

Citations(all)

5089

Citations(since 2020)

3025

Cited By

2795

hIndex(all)

37

hIndex(since 2020)

27

i10Index(all)

120

i10Index(since 2020)

72

Email

University Profile Page

Google Scholar

Juan B. Roldán Skills & Research Interests

Nanoelectronics

RRAMs

Memristors

Circuit and electron device simulation

Electron device compact modeling

Top articles of Juan B. Roldán

Title

Journal

Author(s)

Publication Date

Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

ACS Applied Electronic Materials

Juan B Roldán

Antonio Cantudo

David Maldonado

Cristina Aguilera-Pedregosa

Enrique Moreno

...

2024/2/15

Stochastic resonance in 2D materials based memristors

npj 2D Materials and Applications

JB Roldán

Antonio Cantudo

JJ Torres

D Maldonado

Yaqing Shen

...

2024/1/30

Different PCA approaches for vector functional time series with applications to resistive switching processes

Mathematics and Computers in Simulation

C Acal

AM Aguilera

FJ Alonso

JE Ruiz-Castro

JB Roldán

2024/4/22

Hysteresis in memristors produces a conduction inductance and a conduction capacitance effects

Physical Chemistry Chemical Physics

Juan Bisquert

Juan B Roldán

Enrique Miranda

2024

Non-uniform WENO-based quasi-interpolating splines from the Bernstein-Bézier representation and applications

Mathematics and Computers in Simulation

F Aràndiga

D Barrera

S Eddargani

MJ Ibáñez

JB Roldán

2024/4/16

3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach

Materials Horizons

D Maldonado

A Cantudo

FM Gómez-Campos

Yue Yuan

Yaqing Shen

...

2024

Hardware implementation of memristor-based artificial neural networks

Fernando Aguirre

Abu Sebastian

Manuel Le Gallo

Wenhao Song

Tong Wang

...

2024/3/4

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Materials Science in Semiconductor Processing

D Maldonado

G Vinuesa

S Aldana

FL Aguirre

A Cantudo

...

2024/1/1

Compact Modeling of Hysteresis in Organic Thin-Film Transistors

Authorea Preprints

A Romero

JA Jiménez-Tejada

Rodrigo Picos

D Lara

JB Roldán

...

2024/2/20

Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories

Micromachines

Cristina Aguilera-Pedregosa

David Maldonado

Mireia B González

Enrique Moreno

Francisco Jiménez-Molinos

...

2023/3/10

Conductance quantization in h-bn memristors

Applied Physics Letters

Juan B Roldan

D Maldonado

A Cantudo

Yaqing Shen

Wenwen Zheng

...

2023/5/15

TiN/Ti/HfO 2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance

Frontiers in Neuroscience

David Maldonado

Antonio Cantudo

Eduardo Perez

Rocio Celeste Romero Zaliz

Emilio Perez-Bosch Quesada

...

2023/9

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Advanced Functional Materials

Sebastian Pazos

Thales Becker

Marco Antonio Villena

Wenwen Zheng

Yaqing Shen

...

2024/4

Variability and power enhancement of current controlled resistive switching devices

Microelectronic Engineering

G Vinuesa

H García

JM Lendínez

E García-Ochoa

MB González

...

2023/5/1

Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

Journal of Physics D: Applied Physics

H García

G Vinuesa

E García-Ochoa

FL Aguirre

MB González

...

2023/6/12

An approach to non-homogenous phase-type distributions through multiple cut-points

Quality Engineering

Juan Eloy Ruiz-Castro

Christian Acal

Juan B Roldán

2023/1/13

Holistic variability analysis in resistive switching memories using a two-dimensional variability coefficient

ACS Applied Materials & Interfaces

Christian Acal

David Maldonado

Ana M Aguilera

Kaichen Zhu

Mario Lanza

...

2023/4/7

A Comparison of Resistive Switching Parameters for Memristive Devices with HfO2 Mono Layers and Al2O3/HfO2 Bilayers at the Wafer Scale

Eduardo Perez

David Maldonado

Mamathamba K Mahadevaiah

Emilio Perez-Bosch Quesada

Antonio Cantudo

...

2023/6/6

Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

Nanoscale

Sebastian Pazos

Wenwen Zheng

Tommaso Zanotti

Fernando Aguirre

Thales Becker

...

2023

Hybrid 2D/CMOS microchips for memristive applications

Mario Lanza

2023/10/22

See List of Professors in Juan B. Roldán University(Universidad de Granada)

Co-Authors

academic-engine