Enrique Miranda
Universidad Autónoma de Barcelona
H-index: 38
Europe-Spain
Top articles of Enrique Miranda
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Event-driven Stochastic Compact Model for Resistive Switching Devices | Authorea Preprints | Jordi Suñé M Bargalló-González M Saludes F Campabadal E Miranda | 2024/2/16 |
Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices | Scientific Reports | FL Aguirre E Piros N Kaiser T Vogel S Petzold | 2024/1/11 |
SPICE simulation of the time-dependent clustering model for dielectric breakdown | Solid-State Electronics | E Salvador R Rodriguez E Miranda | 2024/5/1 |
Hysteresis in memristors produces a conduction inductance and a conduction capacitance effects | Physical Chemistry Chemical Physics | Juan Bisquert Juan B Roldán Enrique Miranda | 2024 |
Self-organizing neuromorphic nanowire networks are stochastic dynamical systems | Gianluca Milano Fabio Michieletti Carlo Ricciardi Enrique Miranda | 2024/4/4 | |
A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories | Materials Science in Semiconductor Processing | D Maldonado G Vinuesa S Aldana FL Aguirre A Cantudo | 2024/1/1 |
Hardware implementation of memristor-based artificial neural networks | Fernando Aguirre Abu Sebastian Manuel Le Gallo Wenhao Song Tong Wang | 2024/3/4 | |
The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices | IEEE Electron Device Letters | Enrique Miranda E Piros FL Aguirre T Kim P Schreyer | 2024/2/20 |
Fundamentals and SPICE implementation of the dynamic memdiode model for bipolar resistive switching devices | Authorea Preprints | Enrique Miranda Jordi Suñé | 2023/10/30 |
Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model | IEEE Electron Device Letters | E Miranda E Piros FL Aguirre T Kim P Schreyer | 2023/7/24 |
Analysis of the Polarity-Dependent Catastrophic Damage in TiN/Ti/HfO2/W Memristors | Mercedes Saludes Francesca Campabadal Enrique Miranda Mireia Bargalló | 2023/12/18 | |
Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard | Advanced Quantum Technologies | Jordi Suñé Fernando Aguirre Mireia Bargalló González Francesca Campabadal Enrique Miranda | 2023/7 |
SPICE Modeling of Memristive Devices-Based Neural Networks | FL Aguirre J Suñé E Miranda | 2023/10/16 | |
Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models | Solid-State Electronics | Enrique Miranda Fernando Leonel Aguirre E Salvador Mireia B Gonzalez Francesca Campabadal | 2023/12/1 |
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices | Journal of Physics D: Applied Physics | H García G Vinuesa E García-Ochoa FL Aguirre MB González | 2023/6/12 |
Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks | APL Machine Learning | F Aguirre E Piros N Kaiser T Vogel S Petzold | 2023/9/1 |
The Method of Elementary Solvers in SPICE | Authorea Preprints | Enrique Miranda | 2023/10/31 |
Variability in resistive memories | Juan B Roldán Enrique Miranda David Maldonado Alexey N Mikhaylov Nikolay V Agudov | 2023/6 | |
Oxide Breakdown Spot Spatial Patterns as Fingerprints for Optical Physical Unclonable Functions | IEEE Electron Device Letters | Marc Porti Miquel Redón Jordi Muñoz Montserrat Nafría Enrique Miranda | 2023/8/4 |
HfO2-Based Antifuse Memory Cells | Authorea Preprints | Enrique Miranda Fernando Aguirre Mercedes Saludes Mireia B Gonzalez Jordi Suñé | 2023/10/30 |
Co-Authors
