Tony Kenyon

Tony Kenyon

University College London

H-index: 39

Europe-United Kingdom

About Tony Kenyon

Tony Kenyon, With an exceptional h-index of 39 and a recent h-index of 27 (since 2020), a distinguished researcher at University College London, specializes in the field of Memristors, Nanotechnology, neuromorphic computing, RRAM.

His recent articles reflect a diverse array of research interests and contributions to the field:

Hardware implementation of memristor-based artificial neural networks

FabSim3: An automation toolkit for verified simulations using high performance computing

A Compact SPICE Model for Current Transients within the Subthreshold Regime of Memristors

Unipolar potentiation and depression in memristive devices utilising the subthreshold regime

Artificial dendritic computation: The case for dendrites in neuromorphic circuits

Method for manufacturing a memory resistor device

Brain-inspired computing needs a master plan

Mitigating non-idealities of memristive-based artificial neural networks-an algorithmic approach

Tony Kenyon Information

University

Position

Vice Dean (Research) | Professor of Nanoelectronic & Nanophotonic Materials

Citations(all)

7699

Citations(since 2020)

3517

Cited By

5532

hIndex(all)

39

hIndex(since 2020)

27

i10Index(all)

94

i10Index(since 2020)

55

Email

University Profile Page

University College London

Google Scholar

View Google Scholar Profile

Tony Kenyon Skills & Research Interests

Memristors

Nanotechnology

neuromorphic computing

RRAM

Top articles of Tony Kenyon

Title

Journal

Author(s)

Publication Date

Hardware implementation of memristor-based artificial neural networks

Fernando Aguirre

Abu Sebastian

Manuel Le Gallo

Wenhao Song

Tong Wang

...

2024/3/4

FabSim3: An automation toolkit for verified simulations using high performance computing

Computer Physics Communications

Derek Groen

Hamid Arabnejad

Diana Suleimenova

Wouter Edeling

Erwan Raffin

...

2023/2/1

A Compact SPICE Model for Current Transients within the Subthreshold Regime of Memristors

Daniel J Mannion

Wing H Ng

Adnan Mehonic

Anthony J Kenyon

2023/10/25

Unipolar potentiation and depression in memristive devices utilising the subthreshold regime

IEEE Transactions on Nanotechnology

Daniel J Mannion

Viet Cuong Vu

Wing H Ng

Adnan Mehonic

Anthony J Kenyon

2023/6/8

Artificial dendritic computation: The case for dendrites in neuromorphic circuits

arXiv preprint arXiv:2304.00951

Daniel John Mannion

Anthony Joseph Kenyon

2023/4/3

Method for manufacturing a memory resistor device

2023/3/23

Brain-inspired computing needs a master plan

Adnan Mehonic

Anthony J Kenyon

2022/4/14

Mitigating non-idealities of memristive-based artificial neural networks-an algorithmic approach

Adnan Mehonic

Dovydas Joksas

Nikolaos Barmpatsalos

Wing H Ng

Anthony J Kenyon

...

2022/3/6

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware

Advanced Intelligent Systems

Dovydas Joksas

AbdulAziz AlMutairi

Oscar Lee

Murat Cubukcu

Antonio Lombardo

...

2022/8

Memristors, Spintronics and 2D Materials for Future Computing Systems

arXiv preprint arXiv:2203.06147

Dovydas Joksas

A AlMutairi

Oscar Lee

Murat Cubukcu

Antonio Lombardo

...

2022/3

Defining the performance of SiOx ReRAM by engineering oxide microstructure

Anthony J Kenyon

Adnan Mehonic

Wing Ng

Longfei Zhao

Horatio Cox

...

2022/6/8

Nonideality‐Aware Training for Accurate and Robust Low‐Power Memristive Neural Networks

Advanced Science

Dovydas Joksas

Erwei Wang

Nikolaos Barmpatsalos

Wing H Ng

Anthony J Kenyon

...

2022/6

Engineering silicon oxide by argon ion implantation for high performance resistance switching

Frontiers in Materials

L Zhao

WH Ng

AP Knights

DV Stevanovic

DJ Mannion

...

2022/5/27

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

APL Materials

Horatio RJ Cox

Mark Buckwell

Wing H Ng

Daniel J Mannion

Adnan Mehonic

...

2021/11/1

Substitutional tin acceptor states in black phosphorus

The Journal of Physical Chemistry C

Mark Wentink

Julian Gaberle

Martik Aghajanian

Arash A Mostofi

Neil J Curson

...

2021/10/11

Light-activated switching resistor, an optical sensor incorporating a light-activated switching resistor, and methods of using such devices

2021/6/8

Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM

Frontiers in nanotechnology

Mark Buckwell

Wing H Ng

Daniel J Mannion

Horatio RJ Cox

Stephen Hudziak

...

2021/12/22

Switching resistor and method of making such a device

2021/5/11

Standards for the characterization of endurance in resistive switching devices

Mario Lanza

Rainer Waser

Daniele Ielmini

J Joshua Yang

Ludovic Goux

...

2021/11/3

The nature of column boundaries in micro-structured silicon oxide nanolayers.

APL Materials

K Patel

J Cottom

A Mehonic

WH Ng

AJ Kenyon

...

2021/12/1

See List of Professors in Tony Kenyon University(University College London)

Co-Authors

H-index: 107
Parkin I

Parkin I

University College London

H-index: 72
Colin Humphreys

Colin Humphreys

Queen Mary University of London

H-index: 50
Michel Bosman

Michel Bosman

National University of Singapore

H-index: 48
Nina F. Thornhill

Nina F. Thornhill

Imperial College London

H-index: 37
Papakonstantinou Ioannis

Papakonstantinou Ioannis

University College London

H-index: 31
Sarah Fearn

Sarah Fearn

Imperial College London

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