Colin Humphreys

About Colin Humphreys

Colin Humphreys, With an exceptional h-index of 72 and a recent h-index of 34 (since 2020), a distinguished researcher at Queen Mary University of London, specializes in the field of Materials science, graphene, Gallium Nitride, electron microscopy, science and religion.

His recent articles reflect a diverse array of research interests and contributions to the field:

Wafer-scale transfer-free graphene as an ITO replacement for OLEDs

Research data supporting" Optical and structural properties of dislocations in InGaN"

From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene

Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene

Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)

The relationship between epitaxial growth, defect microstructure and luminescence in GaN

‘Nano-machining’using a focused ion beam

Modelling of electron energy-loss spectroscopy detection limits

Colin Humphreys Information

University

Position

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Citations(all)

34128

Citations(since 2020)

12236

Cited By

27211

hIndex(all)

72

hIndex(since 2020)

34

i10Index(all)

405

i10Index(since 2020)

164

Email

University Profile Page

Google Scholar

Colin Humphreys Skills & Research Interests

Materials science

graphene

Gallium Nitride

electron microscopy

science and religion

Top articles of Colin Humphreys

Wafer-scale transfer-free graphene as an ITO replacement for OLEDs

2023/10/22

Research data supporting" Optical and structural properties of dislocations in InGaN"

2023/1/19

From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene

Microscopy and Microanalysis

2022/8

Colin Humphreys
Colin Humphreys

H-Index: 37

Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene

Physical Review B

2022/4/13

Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)

Advanced Optical Materials

2022/2

The relationship between epitaxial growth, defect microstructure and luminescence in GaN

2022/1/26

‘Nano-machining’using a focused ion beam

2022/1/26

Modelling of electron energy-loss spectroscopy detection limits

2022/1/26

Observation of the mixed dynamic form factor in the Ag M4, 5-edge

2022/1/26

Martensitic transformation and characterisation of the structure of a NiAl-Ni3Al alloy

2022/1/26

Electron microscopy and analysis: the future

2022/1/26

Colin Humphreys
Colin Humphreys

H-Index: 37

Electron beam damage in titanium dioxide films

2022/1/26

Quantification of the composition of silicon germanium/silicon structures by high-angle annular dark field imaging

2022/1/26

Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials

Physical Review B

2022/1/5

Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]

Physical Review B

2021/3/12

Defects in MBE and MOCVD-grown GaAs on Si

2021/1/31

Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100)

2021/1/31

TEM compositional microanalysis in III–V alloys

2021/1/31

High spatial resolution EDX microanalysis of III–V semiconducting materials

2021/1/31

See List of Professors in Colin Humphreys University(Queen Mary University of London)

Co-Authors

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