Yury Illarionov (Юрий Юрьевич Илларионов)
Technische Universität Wien
H-index: 21
Europe-Austria
Top articles of Yury Illarionov (Юрий Юрьевич Илларионов)
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Variability and High Temperature Reliability of Graphene Field-Effect Transistors with Thin Epitaxial CaF2 Insulators | Yury Illarionov Theresia Knobloch Burkay Uzlu Alexander Banshchikov Illiya Ivanov | 2024/2/9 | |
Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors | npj 2D Materials and Applications | Yu Yu Illarionov A Karl Q Smets B Kaczer T Knobloch | 2024/2/2 |
Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators | arXiv preprint arXiv:2309.11233 | Yury Yu Illarionov Theresia Knobloch Burkay Uzlu Alexander G Banshikov Iliya A Ivanov | 2023/9/20 |
Calcium Fluoride Films with 2–10 nm Thickness on Silicon-(111): Growth, Diagnostics, Study of the through Current Transport | Semiconductors | AG Banshchikov MI Vexler IA Ivanov Yu Yu Illarionov NS Sokolov | 2023/4 |
Modeling the Performance and Reliability of Two-Dimensional Semiconductor Transistors | T Knobloch D Waldhoer MR Davoudi A Karl P Khakbaz | 2023/12/9 | |
Effect of fluoride layer thickness on the leakage current in Au/CaF2/Si (111) heterostructures | Thin Solid Films | AG Banshchikov PA Dvortsova Yu Yu Illarionov IA Ivanov NS Sokolov | 2023/10/31 |
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning | Nature Electronics | Theresia Knobloch Burkay Uzlu Yury Yu Illarionov Zhenxing Wang Martin Otto | 2022/6 |
Highly stable GFETs with 2nm crystalline CaF2 insulators | Yury Illarionov Theresia Knobloch B Uzlu NS Sokolov Max C Lemme | 2022 | |
Finding suitable gate insulators for reliable 2D FETs | Theresia Knobloch Yury Yu Illarionov Tibor Grasser | 2022/3/27 | |
Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs | Yury Illarionov Theresia Knobloch Michael Waltl Q Smets L Panarella | 2022 | |
Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology? | Michael Waltl Theresia Knobloch Konstantinos Tselios Lado Filipovic Bernhard Stampfer | 2022/12 | |
Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T | Viktor Sverdlov Heribert Seiler Al-Moatasem El-Sayed Yury Illarionov Hans Kosina | 2022 | |
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study | Dominic Waldhoer Bibhas Manna Al-Moatassem B El-Sayed Theresia Knobloch Yury Illarionov | 2022/9/19 | |
C}{V}{D}-{G}{F}{E}{T} s with {R} ecord-small {H} ysteresis {O} wing to 2nm {E} pitaxial {C} a {F} 2 {I} nsulators} | P} roceedings of the {D} evice {R} esearch {C} onference ({D}{ | Yury Illarionov B Uzlu Theresia Knobloch AG Banshchikov Viktor Sverdlov | 2022 |
Edge modes and their conductance in narrow nanoribbons of 2D materials in a topological phase | Solid-State Electronics | Viktor Sverdlov Heribert Seiler Al-Moatasem Bellah El-Sayed Yury Illarionov Hans Kosina | 2022/7/1 |
Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning | Theresia Knobloch Yury Illarionov Tibor Grasser | 2022 | |
Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning | arXiv preprint arXiv:2104.08172 | Theresia Knobloch Burkay Uzlu Yury Yu Illarionov Zhenxing Wang Martin Otto | 2021/4/16 |
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials | Theresia Knobloch Yury Yu Illarionov Fabian Ducry Christian Schleich Stefan Wachter | 2021/2 | |
Inorganic molecular crystals for 2D electronics | Nature Electronics | Yu.Yu. Illarionov T. Knobloch T. Grasser | 2021/12 |
Correction: Dielectric Properties of Ultrathin CaF 2 Ionic Crystals (Advanced Materials,(2020), 32, 34,(2002525), 10.1002/adma. 202002525) | Advanced Materials | Chao Wen Alexander G Banshchikov Yury Y Illarionov Werner Frammelsberger Theresia Knobloch | 2021/1/1 |
Co-Authors
