Hajime Tanaka
Osaka University
H-index: 6
Asia-Japan
Top articles of Hajime Tanaka
Corrigendum:“Full-band Monte Carlo analysis of strain effects on carrier transport in GaN”[Jpn. J. Appl. Phys. 63 02SP35 (2024)]
Japanese Journal of Applied Physics
2024/4/18
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems
Japanese Journal of Applied Physics
2024/4/15
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC
Materials Science in Semiconductor Processing
2024/4/1
Tunneling current through non-alloyed metal/heavily-doped SiC interfaces
Materials Science in Semiconductor Processing
2024/3/1
Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential
Japanese Journal of Applied Physics
2024/2/22
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Origin of hole mobility anisotropy in 4H-SiC
Journal of Applied Physics
2024/2/21
Hajime Tanaka
H-Index: 5
Tsunenobu Kimoto
H-Index: 38
Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure
Japanese Journal of Applied Physics
2024/2/19
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface
Japanese Journal of Applied Physics
2024/1/30
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer
Japanese Journal of Applied Physics
2024/1/24
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Full-band Monte Carlo analysis of strain effects on carrier transport in GaN
Japanese Journal of Applied Physics
2024/1/4
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Experimental determination of intrinsic carrier density in 4H-SiC based on electron diffusion current in an npn bipolar junction transistor
Journal of Applied Physics
2023/12/21
Koichi Murata
H-Index: 15
Hajime Tanaka
H-Index: 5
Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC
physica status solidi (b)
2023/10
Hajime Tanaka
H-Index: 5
Tsunenobu Kimoto
H-Index: 38
Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness
Applied Physics Express
2023/9/15
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces
Applied Physics Express
2023/3/23
Tight-binding analysis of the effect of strain on the band structure of GaN
Japanese Journal of Applied Physics
2023/2/24
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Carrier trapping effects on forward characteristics of SiC pin diodes fabricated on high-purity semi-insulating substrates
IEEE Transactions on Electron Devices
2022/3/10
Hajime Tanaka
H-Index: 5
Tsunenobu Kimoto
H-Index: 38
Analytical models for inter-layer tunneling in two-dimensional materials
Japanese Journal of Applied Physics
2022/2/11
Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased condition based on complex band structure
Japanese Journal of Applied Physics
2023/1/31
Hajime Tanaka
H-Index: 5
Nobuya Mori
H-Index: 13
Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes
Journal of Applied Physics
2022/6/14
Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes
Applied Physics Letters
2022/4/25
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