Hajime Tanaka

Hajime Tanaka

Osaka University

H-index: 6

Asia-Japan

About Hajime Tanaka

Hajime Tanaka, With an exceptional h-index of 6 and a recent h-index of 6 (since 2020), a distinguished researcher at Osaka University, specializes in the field of Semiconductor Physics, Carrier Transport.

His recent articles reflect a diverse array of research interests and contributions to the field:

Origin of hole mobility anisotropy in 4H-SiC

Corrigendum:“Full-band Monte Carlo analysis of strain effects on carrier transport in GaN”[Jpn. J. Appl. Phys. 63 02SP35 (2024)]

Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure

Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems

Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface

Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC

Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer

Tunneling current through non-alloyed metal/heavily-doped SiC interfaces

Hajime Tanaka Information

University

Position

___

Citations(all)

162

Citations(since 2020)

137

Cited By

75

hIndex(all)

6

hIndex(since 2020)

6

i10Index(all)

4

i10Index(since 2020)

4

Email

University Profile Page

Osaka University

Google Scholar

View Google Scholar Profile

Hajime Tanaka Skills & Research Interests

Semiconductor Physics

Carrier Transport

Top articles of Hajime Tanaka

Title

Journal

Author(s)

Publication Date

Origin of hole mobility anisotropy in 4H-SiC

Journal of Applied Physics

Ryoya Ishikawa

Hajime Tanaka

Mitsuaki Kaneko

Tsunenobu Kimoto

2024/2/21

Corrigendum:“Full-band Monte Carlo analysis of strain effects on carrier transport in GaN”[Jpn. J. Appl. Phys. 63 02SP35 (2024)]

Japanese Journal of Applied Physics

Wataru Miyazaki

Hajime Tanaka

Nobuya Mori

2024/4/18

Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure

Japanese Journal of Applied Physics

Seyed Ali Mojtahedzadeh

Hajime Tanaka

Nobuya Mori

2024/2/19

Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems

Japanese Journal of Applied Physics

Seyed Ali Mojtahedzadeh

Hajime Tanaka

Nobuya Mori

2024/4/15

Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface

Japanese Journal of Applied Physics

Keisuke Utsumi

Hajime Tanaka

Nobuya Mori

2024/1/30

Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC

Materials Science in Semiconductor Processing

Hajime Tanaka

Tsunenobu Kimoto

Nobuya Mori

2024/4/1

Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer

Japanese Journal of Applied Physics

Sachika Nagamizo

Hajime Tanaka

Nobuya Mori

2024/1/24

Tunneling current through non-alloyed metal/heavily-doped SiC interfaces

Materials Science in Semiconductor Processing

Masahiro Hara

Takeaki Kitawaki

Hajime Tanaka

Mitsuaki Kaneko

Tsunenobu Kimoto

2024/3/1

Full-band Monte Carlo analysis of strain effects on carrier transport in GaN

Japanese Journal of Applied Physics

Wataru Miyazaki

Hajime Tanaka

Nobuya Mori

2024/1/4

Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential

Japanese Journal of Applied Physics

Yutoku Murakami

Sachika Nagamizo

Hajime Tanaka

Nobuya Mori

2024/2/22

Experimental determination of intrinsic carrier density in 4H-SiC based on electron diffusion current in an npn bipolar junction transistor

Journal of Applied Physics

Satoshi Asada

Koichi Murata

Hajime Tanaka

Hidekazu Tsuchida

2023/12/21

Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC

physica status solidi (b)

Ryoya Ishikawa

Hajime Tanaka

Mitsuaki Kaneko

Tsunenobu Kimoto

2023/10

Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness

Applied Physics Express

Jo Okada

Hajime Tanaka

Nobuya Mori

2023/9/15

Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces

Applied Physics Express

Takeaki Kitawaki

Masahiro Hara

Hajime Tanaka

Mitsuaki Kaneko

Tsunenobu Kimoto

2023/3/23

Tight-binding analysis of the effect of strain on the band structure of GaN

Japanese Journal of Applied Physics

Wataru Miyazaki

Hajime Tanaka

Nobuya Mori

2023/2/24

Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased condition based on complex band structure

Japanese Journal of Applied Physics

Yutoku Murakami

Sachika Nagamizo

Hajime Tanaka

Nobuya Mori

2023/1/31

Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes

Journal of Applied Physics

H Tanaka

T Kimoto

N Mori

2022/6/14

Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes

Applied Physics Letters

Masahiro Hara

Hajime Tanaka

Mitsuaki Kaneko

Tsunenobu Kimoto

2022/4/25

Carrier trapping effects on forward characteristics of SiC pin diodes fabricated on high-purity semi-insulating substrates

IEEE Transactions on Electron Devices

Katsuya Takahashi

Hajime Tanaka

Mitsuaki Kaneko

Tsunenobu Kimoto

2022/3/10

Analytical models for inter-layer tunneling in two-dimensional materials

Japanese Journal of Applied Physics

Nobuya Mori

Futo Hashimoto

Takaya Mishima

Hajime Tanaka

2022/2/11

See List of Professors in Hajime Tanaka University(Osaka University)

Co-Authors

H-index: 73
Tsunenobu Kimoto

Tsunenobu Kimoto

Kyoto University

H-index: 47
Suda Jun

Suda Jun

Nagoya University

H-index: 26
Masahiro Horita

Masahiro Horita

Kyoto University

H-index: 26
Nobuya Mori

Nobuya Mori

Osaka University

H-index: 15
Takuya Maeda

Takuya Maeda

Cornell University

H-index: 15
Takuma Kobayashi

Takuma Kobayashi

Osaka University

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