Takuya Maeda
Cornell University
H-index: 15
North America-United States
Top articles of Takuya Maeda
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering | Applied Physics Express | Atsushi Kobayashi Yoshio Honda Takuya Maeda Tomoya Okuda Kohei Ueno | 2023/12/29 |
AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality | Joseph Casamento Kazuki Nomoto Thai-Son Nguyen Hyunjea Lee Chandrasekhar Savant | 2023/10/16 | |
Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN | ACS Applied Electronic Materials | Atsushi Kobayashi Shunya Kihira Toru Akiyama Takahiro Kawamura Takuya Maeda | 2023/1/9 |
AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer | Applied Physics Express | Takuya Maeda Ryan Page Kazuki Nomoto Masato Toita Huili Grace Xing | 2022/5/27 |
Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties | Applied Physics Letters | Joseph Casamento Hyunjea Lee Takuya Maeda Ved Gund Kazuki Nomoto | 2022/4/11 |
FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors | J Casamento K Nomoto TS Nguyen H Lee C Savant | 2022/12/3 | |
Impact ionization coefficients and critical electric field in GaN | Journal of Applied Physics | Takuya Maeda Tetsuo Narita Shinji Yamada Tetsu Kachi Tsunenobu Kimoto | 2021/5/14 |
Breakdown Electric Field of GaN p+-n and pn Junction Diodes with Various Doping Concentrations | IEEE Electron Device Letters | Takuya Maeda Tetsuo Narita Shinji Yamada Tetsu Kachi Tsunenobu Kimoto | 2021/11 |
Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1− xN/GaN heterostructures | APL Materials | Joseph Casamento Hyunjea Lee Celesta S Chang Matthew F Besser Takuya Maeda | 2021/9/1 |
Ferroelectricity in polar ScAlN/GaN epitaxial semiconductor heterostructures | arXiv preprint arXiv:2105.10114 | Joseph Casamento Ved Gund Hyunjea Lee Kazuki Nomoto Takuya Maeda | 2021/5/21 |
Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces | Applied Physics Express | Masahiro Hara Satoshi Asada Takuya Maeda Tsunenobu Kimoto | 2020/3/13 |
GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX | Kazuki Nomoto Reet Chaudhuri Samuel James Bader Lei Li Austin Hickman | 2020/12/12 | |
Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition | AIP Advances | Takuya Maeda Mitsuru Okigawa Yuji Kato Isao Takahashi Takashi Shinohe | 2020/12/1 |
Experimental determination of impact ionization coefficients along<11-20> in 4H-SiC | IEEE Transactions on Electron Devices | Dionysios Stefanakis Xilun Chi Takuya Maeda Mitsuaki Kaneko Tsunenobu Kimoto | 2020/8/10 |
Study on Avalanche Breakdown in GaN | https://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/253283/2/dkogk04708.pdf | T. Maeda | 2020/3/23 |
