Nobuya Mori

Nobuya Mori

Osaka University

H-index: 26

Asia-Japan

About Nobuya Mori

Nobuya Mori, With an exceptional h-index of 26 and a recent h-index of 14 (since 2020), a distinguished researcher at Osaka University, specializes in the field of Semiconductor.

His recent articles reflect a diverse array of research interests and contributions to the field:

Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness

Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC

Full-band Monte Carlo analysis of strain effects on carrier transport in GaN

Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential

Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure

Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface

Corrigendum:“Full-band Monte Carlo analysis of strain effects on carrier transport in GaN”[Jpn. J. Appl. Phys. 63 02SP35 (2024)]

Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer

Nobuya Mori Information

University

Osaka University

Position

___

Citations(all)

3794

Citations(since 2020)

901

Cited By

3246

hIndex(all)

26

hIndex(since 2020)

14

i10Index(all)

68

i10Index(since 2020)

19

Email

University Profile Page

Osaka University

Nobuya Mori Skills & Research Interests

Semiconductor

Top articles of Nobuya Mori

Title

Journal

Author(s)

Publication Date

Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness

Japanese Journal of Applied Physics

Jin Hyong Lim

Nobuya Mori

2024/1/10

Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC

Materials Science in Semiconductor Processing

Hajime Tanaka

Tsunenobu Kimoto

Nobuya Mori

2024/4/1

Full-band Monte Carlo analysis of strain effects on carrier transport in GaN

Japanese Journal of Applied Physics

Wataru Miyazaki

Hajime Tanaka

Nobuya Mori

2024/1/4

Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential

Japanese Journal of Applied Physics

Yutoku Murakami

Sachika Nagamizo

Hajime Tanaka

Nobuya Mori

2024/2/22

Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure

Japanese Journal of Applied Physics

Seyed Ali Mojtahedzadeh

Hajime Tanaka

Nobuya Mori

2024/2/19

Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface

Japanese Journal of Applied Physics

Keisuke Utsumi

Hajime Tanaka

Nobuya Mori

2024/1/30

Corrigendum:“Full-band Monte Carlo analysis of strain effects on carrier transport in GaN”[Jpn. J. Appl. Phys. 63 02SP35 (2024)]

Japanese Journal of Applied Physics

Wataru Miyazaki

Hajime Tanaka

Nobuya Mori

2024/4/18

Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer

Japanese Journal of Applied Physics

Sachika Nagamizo

Hajime Tanaka

Nobuya Mori

2024/1/24

Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems

Japanese Journal of Applied Physics

Seyed Ali Mojtahedzadeh

Hajime Tanaka

Nobuya Mori

2024/4/15

Effects of hydrogen radical treatment on piezoresistance coefficients of germanium

Applied Physics Express

Kazunori Matsuda

Masashi Yamamoto

Michio Mikawa

Shiro Nagaoka

Nobuya Mori

...

2023/4/18

Tight-binding analysis of the effect of strain on the band structure of GaN

Japanese Journal of Applied Physics

Wataru Miyazaki

Hajime Tanaka

Nobuya Mori

2023/2/24

Accuracy of equivalent model in band-to-band tunneling simulation of semiconductor nanowires

Japanese Journal of Applied Physics

Jo Okada

Nobuya Mori

Gennady Mil’nikov

2023/2/9

Calculation of Electric Field Distribution in 3D Monte Carlo Device Simulation using Machine Learning

Shunsuke Kuramoto

Nobuya Mori

2023/11/16

Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased conditions based on the complex band structure

Japanese Journal of Applied Physics

Yutoku Murakami

Sachika Nagamizo

Hajime Tanaka

Nobuya Mori

2023/1/31

RSDFT-NEGF transport simulations in realistic nanoscale transistors

Journal of Computational Electronics

Gennady Mil’nikov

Jun-ichi Iwata

Nobuya Mori

Atsushi Oshiyama

2023/10

Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness

Applied Physics Express

Jo Okada

Hajime Tanaka

Nobuya Mori

2023/9/15

Analytical models for inter-layer tunneling in two-dimensional materials

Japanese Journal of Applied Physics

Nobuya Mori

Futo Hashimoto

Takaya Mishima

Hajime Tanaka

2022/2/11

Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes

Journal of Applied Physics

H Tanaka

T Kimoto

N Mori

2022/6/14

Electron and Phonon Transport Simulation for Quantum Hybrid System

Nobuya Mori

Gennady Mil’nikov

2022/5/4

Reduction of order of device Hamiltonian with adaptive moment estimation

Japanese Journal of Applied Physics

Jo Okada

Futo Hashimoto

Nobuya Mori

2021/1/15

See List of Professors in Nobuya Mori University(Osaka University)

Nobuya Mori FAQs

What is Nobuya Mori's h-index at Osaka University?

The h-index of Nobuya Mori has been 14 since 2020 and 26 in total.

What are Nobuya Mori's top articles?

The articles with the titles of

Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness

Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC

Full-band Monte Carlo analysis of strain effects on carrier transport in GaN

Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential

Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure

Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface

Corrigendum:“Full-band Monte Carlo analysis of strain effects on carrier transport in GaN”[Jpn. J. Appl. Phys. 63 02SP35 (2024)]

Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer

...

are the top articles of Nobuya Mori at Osaka University.

What are Nobuya Mori's research interests?

The research interests of Nobuya Mori are: Semiconductor

What is Nobuya Mori's total number of citations?

Nobuya Mori has 3,794 citations in total.

What are the co-authors of Nobuya Mori?

The co-authors of Nobuya Mori are Takeshi Fujita, Kohei M. Itoh, J.C. Maan, Newton La Scala Jr., Hajime Tanaka.

Co-Authors

H-index: 81
Takeshi Fujita

Takeshi Fujita

Kochi University of Technology

H-index: 65
Kohei M. Itoh

Kohei M. Itoh

Keio University

H-index: 63
J.C. Maan

J.C. Maan

Radboud Universiteit

H-index: 38
Newton La Scala Jr.

Newton La Scala Jr.

Universidade Estadual Paulista

H-index: 6
Hajime Tanaka

Hajime Tanaka

Osaka University

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