Nobuya Mori
Osaka University
H-index: 26
Asia-Japan
Top articles of Nobuya Mori
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness | Japanese Journal of Applied Physics | Jin Hyong Lim Nobuya Mori | 2024/1/10 |
Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC | Materials Science in Semiconductor Processing | Hajime Tanaka Tsunenobu Kimoto Nobuya Mori | 2024/4/1 |
Full-band Monte Carlo analysis of strain effects on carrier transport in GaN | Japanese Journal of Applied Physics | Wataru Miyazaki Hajime Tanaka Nobuya Mori | 2024/1/4 |
Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential | Japanese Journal of Applied Physics | Yutoku Murakami Sachika Nagamizo Hajime Tanaka Nobuya Mori | 2024/2/22 |
Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure | Japanese Journal of Applied Physics | Seyed Ali Mojtahedzadeh Hajime Tanaka Nobuya Mori | 2024/2/19 |
Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface | Japanese Journal of Applied Physics | Keisuke Utsumi Hajime Tanaka Nobuya Mori | 2024/1/30 |
Corrigendum:“Full-band Monte Carlo analysis of strain effects on carrier transport in GaN”[Jpn. J. Appl. Phys. 63 02SP35 (2024)] | Japanese Journal of Applied Physics | Wataru Miyazaki Hajime Tanaka Nobuya Mori | 2024/4/18 |
Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer | Japanese Journal of Applied Physics | Sachika Nagamizo Hajime Tanaka Nobuya Mori | 2024/1/24 |
Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems | Japanese Journal of Applied Physics | Seyed Ali Mojtahedzadeh Hajime Tanaka Nobuya Mori | 2024/4/15 |
Effects of hydrogen radical treatment on piezoresistance coefficients of germanium | Applied Physics Express | Kazunori Matsuda Masashi Yamamoto Michio Mikawa Shiro Nagaoka Nobuya Mori | 2023/4/18 |
Tight-binding analysis of the effect of strain on the band structure of GaN | Japanese Journal of Applied Physics | Wataru Miyazaki Hajime Tanaka Nobuya Mori | 2023/2/24 |
Accuracy of equivalent model in band-to-band tunneling simulation of semiconductor nanowires | Japanese Journal of Applied Physics | Jo Okada Nobuya Mori Gennady Mil’nikov | 2023/2/9 |
Calculation of Electric Field Distribution in 3D Monte Carlo Device Simulation using Machine Learning | Shunsuke Kuramoto Nobuya Mori | 2023/11/16 | |
Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased conditions based on the complex band structure | Japanese Journal of Applied Physics | Yutoku Murakami Sachika Nagamizo Hajime Tanaka Nobuya Mori | 2023/1/31 |
RSDFT-NEGF transport simulations in realistic nanoscale transistors | Journal of Computational Electronics | Gennady Mil’nikov Jun-ichi Iwata Nobuya Mori Atsushi Oshiyama | 2023/10 |
Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness | Applied Physics Express | Jo Okada Hajime Tanaka Nobuya Mori | 2023/9/15 |
Analytical models for inter-layer tunneling in two-dimensional materials | Japanese Journal of Applied Physics | Nobuya Mori Futo Hashimoto Takaya Mishima Hajime Tanaka | 2022/2/11 |
Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes | Journal of Applied Physics | H Tanaka T Kimoto N Mori | 2022/6/14 |
Electron and Phonon Transport Simulation for Quantum Hybrid System | Nobuya Mori Gennady Mil’nikov | 2022/5/4 | |
Reduction of order of device Hamiltonian with adaptive moment estimation | Japanese Journal of Applied Physics | Jo Okada Futo Hashimoto Nobuya Mori | 2021/1/15 |
Co-Authors
