Giovanni Verzellesi
Università degli Studi di Modena e Reggio Emilia
H-index: 31
Europe-Italy
Top articles of Giovanni Verzellesi
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs | IEEE Electron Device Letters | Nicolò Zagni Giovanni Verzellesi Alessandro Bertacchini Mattia Borgarino Ferdinando Iucolano | 2024/3/11 |
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD | Journal of Semiconductors | Nicolò Zagni Manuel Fregolent Andrea Del Fiol Davide Favero Francesco Bergamin | 2024 |
III-N optoelectronic devices: understanding the physics of electro-optical degradation | Matteo Meneghini Nicola Roccato Francesco Piva Carlo De Santi Matteo Buffolo | 2023/3/14 | |
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability | IEEE Transactions on Electron Devices | Enrico Zanoni Carlo De Santi Zhan Gao Matteo Buffolo Mirko Fornasier | 2023/10/9 |
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs | N Zagni A Chini G Verzellesi M Cioni G Giorgino | 2023 | |
Unveiling the role of hole barrier traps on ON-resistance instability after gate bias stress in p-GaN power HEMTs | Nicolò Zagni Alessandro Chini Giovanni Verzellesi Marcello Cioni Giovanni Giorgino | 2023/10/8 | |
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical AlO/GaN MOS Capacitors | IEEE Transactions on Electron Devices | Nicolò Zagni Manuel Fregolent Giovanni Verzellesi Alberto Marcuzzi Carlo De Santi | 2023/11/27 |
Mechanisms of step-stress degradation in carbon-doped 0.15 μm algan/Gan hemts for power RF applications | IEEE Transactions on Device and Materials Reliability | Nicolò Zagni Veronica Zhan Gao Giovanni Verzellesi Alessandro Chini Alessio Pantellini | 2023/8/14 |
Neutron irradiation of Hydrogenated Amorphous Silicon pin diodes and charge selective contacts detectors | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | M Menichelli M Bizzarri M Boscardin L Calcagnile M Caprai | 2023/7/1 |
Dynamic Behavior of Threshold Voltage and – Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect | IEEE Transactions on Electron Devices | Zhan Gao Carlo De Santi Fabiana Rampazzo Marco Saro Mirko Fornasier | 2023/10/31 |
Displacement damage in Hydrogenated Amorphous Silicon pin diodes and charge selective contacts detectors | Authorea Preprints | Mauro Menichelli Marco Bizzarri Maurizio Boscardin Lucio Calcagnile Mirco Caprai | 2023/10/31 |
Gate-Bias Induced RON Instability in p-GaN Power HEMTs | IEEE Electron Device Letters | Alessandro Chini Nicolò Zagni Giovanni Verzellesi Marcello Cioni Giovanni Giorgino | 2023/4/7 |
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress | Microelectronics Reliability | Nicola Roccato Francesco Piva Carlo De Santi Matteo Buffolo Camille Haller | 2022/11/1 |
Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II | Giovanni Verzellesi | 2022/3/1 | |
High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices | Nanomaterials | Francesca Peverini Marco Bizzarri Maurizio Boscardin Lucio Calcagnile Mirco Caprai | 2022/10/4 |
Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors | Journal of Instrumentation | M Menichelli M Bizzarri M Boscardin M Caprai AP Caricato | 2022/3/18 |
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters | M Buffolo N Roccato Francesco Piva Carlo DE SANTI C Haller | 2022 | |
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications | Micromachines | Nicolò Zagni Giovanni Verzellesi Alessandro Chini | 2022/12/17 |
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics | Nicola Roccato Francesco Piva Carlo De Santi Riccardo Brescancin Kalparupa Mukherjee | 2022/3/5 | |
Discriminating the effects of deep-levels in InGaN/GaN LEDs: impact on forward leakage current | M Buffolo N Roccato F Piva C De Santi C Haller | 2022 |
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