Daniel M. Fleetwood
Vanderbilt University
H-index: 91
North America-United States
Top articles of Daniel M. Fleetwood
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
In Memoriam Floyd Coppage | IEEE Transactions on Nuclear Science | Dan Fleetwood | 2024/4/18 |
Single-Event Burnout in Vertical β-Ga2O3 Diodes with Pt/PtOx Schottky Contacts and High-k Field-Plate Dielectrics | IEEE Transactions on Nuclear Science | S Islam AS Senarath E Farzana DR Ball A Sengupta | 2024/2/26 |
Special NSREC 2023 Issue of the IEEE Transactions on Nuclear Science Editor Comments | IEEE Transactions on Nuclear Science | Dan Fleetwood Heather Quinn Steven Moss Vincent Goiffon Philippe Paillet | 2024/4/18 |
Outstanding Conference Paper Award: 2023 IEEE Nuclear and Space Radiation Effects Conference | IEEE Transactions on Nuclear Science | Dan Fleetwood | 2024/4/18 |
Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors | Journal of Applied Physics | XY Luo A O'Hara X Li PF Wang EX Zhang | 2024/1/14 |
Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers | Electronics | Taeyeong Kim Gyungtae Ryu Jongho Lee Moon-Kyu Cho Daniel M Fleetwood | 2024/4/11 |
Nsrec 2023 Special Issue of the IEEE Transactions on Nuclear Science List of Reviewers | IEEE Transactions on Nuclear Science | Dan Fleetwood | 2024/4/18 |
Low-frequency noise due to iron impurity centers in GaN-based HEMTs | IEEE Transactions on Electron Devices | Daniel M Fleetwood Xun Li En Xia Zhang Ronald D Schrimpf Sokrates T Pantelides | 2024/1/3 |
Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design | Applied Physics Letters | AS Senarath S Islam A Sengupta MW McCurdy T Anderson | 2024/3/25 |
In Memoriam Clyde Combs, Jr. | IEEE Transactions on Nuclear Science | Dan Fleetwood | 2024/4/18 |
Defects in as-processed, irradiated, and stressed GaAs-based device structures | Bulletin of the American Physical Society | Andrew O'Hara Xuyi Luo Enxia Zhang Ronald Schrimpf Daniel Fleetwood | 2024/3/5 |
2023 IEEE Nuclear and Space Radiation Effects Conference Awards: Comments by the Chair | IEEE Transactions on Nuclear Science | Julien Mekki Dan Fleetwood | 2024/4/18 |
Comparative energetics of nanovoid growth in wide-and ultrawide-band gap semiconductors | Bulletin of the American Physical Society | Haardik Pandey Grant Mayberry Demos Negash Ronald Schrimpf Daniel Fleetwood | 2024/3/5 |
IEEE: Comments by the Editors | IEEE Trans. Nucl. Sci. | Dan Fleetwood Lili Ding Daniel Loveless Jeffrey Black Vincent Goiffon | 2023 |
Negative bias-temperature instabilities and low-frequency noise in Ge FinFETs | IEEE Transactions on Device and Materials Reliability | Xuyi Luo En Xia Zhang Peng Fei Wang Kan Li Dimitri Linten | 2023/1/30 |
Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors | Applied Physics Letters | DM Fleetwood | 2023/4/24 |
Defect and impurity-center activation and passivation in irradiated AlGaN/GaN HEMTs | IEEE Transactions on Nuclear Science | X Li PF Wang X Zhao H Qiu M Gorchichko | 2023/11/28 |
Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices | IEEE Transactions on Nuclear Science | Daniel M Fleetwood En Xia Zhang Ronald D Schrimpf Sokrates T Pantelides Stefano Bonaldo | 2023/10/10 |
Low-frequency noise in nanowires | Nanoscale | Daniel M. Fleetwood | 2023 |
Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics | IEEE Transactions on Nuclear Science | Kan Li Xuyi Luo MW Rony Mariia Gorchichko Gaspard Hiblot | 2023/1/25 |
Co-Authors
