John D. Cressler

John D. Cressler

Georgia Institute of Technology

H-index: 62

North America-United States

About John D. Cressler

John D. Cressler, With an exceptional h-index of 62 and a recent h-index of 26 (since 2020), a distinguished researcher at Georgia Institute of Technology, specializes in the field of All-things-SiGe, electronics, photonics, radiation effects, cryogenics.

His recent articles reflect a diverse array of research interests and contributions to the field:

Systems and methods for general-purpose, high-performance transversal filter processing

Avalanche photodiodes and methods of making the same

A -Band Stacked Frequency Quadrupler With a Dual-Driven Core Achieving 10.3% Drain Efficiency

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Comparing 3rd-Order Digital Modulation Schemes for SEU Resilience in RF Receivers due to SETs in the SiGe LNA

How to Consider SEEs When Designing a SiGe Low-Noise Amplifier-An Overview

A SiGe HBT D-Band LNA Utilizing Asymmetric Broadside Coupled Lines

5-GHz Injection-Locked Delay Cell with 10–25 ns Adjustable Group-Delay in SiGe BiCMOS

John D. Cressler Information

University

Position

Professor of Electrical and Computer Engineering

Citations(all)

19821

Citations(since 2020)

4341

Cited By

17332

hIndex(all)

62

hIndex(since 2020)

26

i10Index(all)

465

i10Index(since 2020)

118

Email

University Profile Page

Georgia Institute of Technology

Google Scholar

View Google Scholar Profile

John D. Cressler Skills & Research Interests

All-things-SiGe

electronics

photonics

radiation effects

cryogenics

Top articles of John D. Cressler

Title

Journal

Author(s)

Publication Date

Systems and methods for general-purpose, high-performance transversal filter processing

2023/12/19

Avalanche photodiodes and methods of making the same

2024/1/4

A -Band Stacked Frequency Quadrupler With a Dual-Driven Core Achieving 10.3% Drain Efficiency

IEEE Microwave and Wireless Technology Letters

Yaw A Mensah

Sunil G Rao

Jeffrey W Teng

John D Cressler

2024/4/30

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Electronics

Taeyeong Kim

Gyungtae Ryu

Jongho Lee

Moon-Kyu Cho

Daniel M Fleetwood

...

2024/4/11

Comparing 3rd-Order Digital Modulation Schemes for SEU Resilience in RF Receivers due to SETs in the SiGe LNA

IEEE Transactions on Nuclear Science

Delgermaa Nergui

Zachary R Brumbach

Adrian Ildefonso

Jeffrey W Teng

Sunil G Rao

...

2024/3/7

How to Consider SEEs When Designing a SiGe Low-Noise Amplifier-An Overview

Jeffrey W Teng

Delgermaa Nergui

Yaw A Mensah

Adrian Ildefonso

John D Cressler

2024/2/28

A SiGe HBT D-Band LNA Utilizing Asymmetric Broadside Coupled Lines

IEEE Microwave and Wireless Technology Letters

Arya Moradinia

Sunil G Rao

John D Cressler

2023/3/1

5-GHz Injection-Locked Delay Cell with 10–25 ns Adjustable Group-Delay in SiGe BiCMOS

IEEE Transactions on Circuits and Systems II: Express Briefs

Amirreza Alizadeh

Milad Frounchi

John D Cressler

Bertan Bakkaloglu

Sayfe Kiaei

2023/6/15

D-Band Active Transmission Line With 33-GHz Bandwidth and 13-dB Gain at f /2

IEEE Transactions on Microwave Theory and Techniques

Amirreza Alizadeh

Saleh Hassanzadehyamchi

Arya Moradinia

Ata Sarrafi Nazhad

Milad Frounchi

...

2023/10/4

Silicon Earth—Part 2: From Transistor to IC

IEEE Electron Devices Magazine

John D Cressler

2023/12

A 117–155-GHz SiGe HBT -Band Subharmonic Mixer Utilizing a Novel 180 Hybrid Coupler

IEEE Microwave and Wireless Technology Letters

Arya Moradinia

Yaw A Mensah

Brett L Ringel

John D Cressler

2023/2/22

A V-Band LC-VCO and Doubler with Wide Tuning Range and Low Phase Noise Using Series-Shunt Anti-Parallel SiGe HBT Switches

Wonsub Lim

Arya Moradinia

Sanghoon Lee

Clifford D Cheon

Christopher T Coen

...

2023/6/11

Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking

Sensors

Ickhyun Song

Gyungtae Ryu

Seung Hwan Jung

John D Cressler

Moon-Kyu Cho

2023/7/28

Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low Noise Amplifier

IEEE Transactions on Nuclear Science

Delgermaa Nergui

Jeffrey W Teng

Zachary R Brumbach

Adrian Ildefonso

Sunil G Rao

...

2023/11/1

Impact of Device Layout on Thermal Parameters and RF Performance of 90-nm SiGe HBTs

IEEE Transactions on Electron Devices

Nelson E Sepúlveda-Ramos

Jeffrey W Teng

Adrian Ildefonso

Harrison P Lee

Sunil G Rao

...

2023/1/6

A 110-145 GHz SiGe HBT D-Band Vector Modulator Phase Shifter Utilizing Differential Quadrature Delay Lines

IEEE Solid-State Circuits Letters

Arya Moradinia

Yaw A Mensah

Wonsub Lim

Sanghoon Lee

John D Cressler

2023/4/17

Direct measurement of total-ionizing-dose-induced phase shifts in commercially available, integrated silicon-photonic waveguides

IEEE Transactions on Nuclear Science

George N Tzintzarov

Jeffrey W Teng

Delgermaa Nergui

Brett L Ringel

Stephen D LaLumondiere

...

2023/7/7

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs

Harrison P Lee

Nelson E Sepúlveda-Ramos

Jeffrey W Teng

Jackson P Moody

Delgermaa Nergui

...

2023/10/16

Analysis of Optical Single-Event Transients in Integrated Silicon Photonics Mach-Zehnder Modulators for Space-based Optical Communications

IEEE Transactions on Nuclear Science

Mozhgan Hosseinzadeh

Jeffrey W Teng

Delgermaa Nergui

Brett L Ringel

Adrian Ildefonso

...

2023/12/29

A High-Efficiency W-Band Frequency Quadrupler With Current-Reusing Stacked Push–Push Stages

IEEE Microwave and Wireless Technology Letters

Yaw A Mensah

Sunil G Rao

Jeffrey W Teng

John D Cressler

2023/1/2

See List of Professors in John D. Cressler University(Georgia Institute of Technology)