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chen lin

About chen lin

chen lin, With an exceptional h-index of 34 and a recent h-index of 33 (since 2020), a distinguished researcher at Fudan University, specializes in the field of semiconductor.

His recent articles reflect a diverse array of research interests and contributions to the field:

BEOL Compatible Ultra-Thin ITO Transistor with Performance Recoverable Capability by in situ Electrothermal Annealing

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Organic heterojunction synaptic device with ultra high recognition rate for neuromorphic computing

Ionic Diffusive Nanomemristors with Dendritic Competition and Cooperation Functions for Ultralow Voltage Neuromorphic Computing

A Photomemristor with Temporal Dynamics for In-sensor Reservoir Computing

Novel Three-Dimensional Artificial Neural Network Based on an Eight-Layer Vertical Memristor with an Ultrahigh Rectify Ratio (> 107) and an Ultrahigh Nonlinearity (> 105) for …

Through silicon via structure for three-dimensional integrated circuit packaging and manufacturing method thereof

SOI active transfer board for three-dimensional packaging and preparation method thereof

chen lin Information

University

Position

___

Citations(all)

3617

Citations(since 2020)

3085

Cited By

1130

hIndex(all)

34

hIndex(since 2020)

33

i10Index(all)

92

i10Index(since 2020)

82

Email

University Profile Page

Google Scholar

chen lin Skills & Research Interests

semiconductor

Top articles of chen lin

BEOL Compatible Ultra-Thin ITO Transistor with Performance Recoverable Capability by in situ Electrothermal Annealing

IEEE Electron Device Letters

2024/3/27

Xianghui Li
Xianghui Li

H-Index: 14

Siwei Wang
Siwei Wang

H-Index: 3

Tianyu Wang
Tianyu Wang

H-Index: 3

Lin Chen
Lin Chen

H-Index: 21

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Journal of Materials Chemistry C

2022

Sangho Lee
Sangho Lee

H-Index: 3

Taeho Kim
Taeho Kim

H-Index: 4

Minhyun Jung
Minhyun Jung

H-Index: 6

Myounggon Kang
Myounggon Kang

H-Index: 16

Sanghun Jeon
Sanghun Jeon

H-Index: 30

Organic heterojunction synaptic device with ultra high recognition rate for neuromorphic computing

Nano Research

2024/3/14

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

Ionic Diffusive Nanomemristors with Dendritic Competition and Cooperation Functions for Ultralow Voltage Neuromorphic Computing

ACS nano

2024/3/13

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Li Ji
Li Ji

H-Index: 6

Lin Chen
Lin Chen

H-Index: 21

A Photomemristor with Temporal Dynamics for In-sensor Reservoir Computing

IEEE Electron Device Letters

2024/2/5

Tianyu Wang
Tianyu Wang

H-Index: 3

Chen Wang
Chen Wang

H-Index: 22

Lin Chen
Lin Chen

H-Index: 21

Novel Three-Dimensional Artificial Neural Network Based on an Eight-Layer Vertical Memristor with an Ultrahigh Rectify Ratio (> 107) and an Ultrahigh Nonlinearity (> 105) for …

Nano Letters

2024/2/5

Chen Lu
Chen Lu

H-Index: 6

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

Through silicon via structure for three-dimensional integrated circuit packaging and manufacturing method thereof

2024/1/30

SOI active transfer board for three-dimensional packaging and preparation method thereof

2024/1/23

Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic Computing

Nano Letters

2024/1/19

Chen Lu
Chen Lu

H-Index: 6

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

ACS Applied Electronic Materials

2024/1/17

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

Three-dimensional capacitor-inductor based on high functional density through silicon via structure and preparation method thereof

2024/1/9

Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications

Materials Horizons

2024

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

Ferroelectric artificial synapse for neuromorphic computing and flexible applications

Fundamental Research

2023/11/1

Hao Zhu
Hao Zhu

H-Index: 30

Li Ji
Li Ji

H-Index: 6

Lin Chen
Lin Chen

H-Index: 21

Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations

IEEE Transactions on Electron Devices

2023/9/5

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

Novel brain‐inspired optomemristive feedback neuron for neuromorphic computing

Brain‐X

2023/9

Lin Chen
Lin Chen

H-Index: 21

Tianyu Wang
Tianyu Wang

H-Index: 3

Fully Light Modulated Self-Powered Optoelectronic Memristor for Neuromorphic Computing

IEEE Electron Device Letters

2023/8/21

Chen Lu
Chen Lu

H-Index: 6

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels

Advanced Materials

2023/8

Yue Liu
Yue Liu

H-Index: 1

Xufeng Zhou
Xufeng Zhou

H-Index: 1

Hui Yan
Hui Yan

H-Index: 9

Xiang Shi
Xiang Shi

H-Index: 7

Ke Chen
Ke Chen

H-Index: 6

Tianyu Wang
Tianyu Wang

H-Index: 3

Jiaxin Chen
Jiaxin Chen

H-Index: 3

Lin Chen
Lin Chen

H-Index: 21

Peining Chen
Peining Chen

H-Index: 30

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Advanced Electronic Materials

2023/8

Tianyu Wang
Tianyu Wang

H-Index: 3

Pei Liu
Pei Liu

H-Index: 9

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

Research progress of siVEGF complex and their application in antiangiogenic therapy

2023/7/20

Yan Wang
Yan Wang

H-Index: 2

Lin Chen
Lin Chen

H-Index: 21

Fan Jia
Fan Jia

H-Index: 8

Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films

IEEE Electron Device Letters

2023/7/20

Tianyu Wang
Tianyu Wang

H-Index: 3

Hao Zhu
Hao Zhu

H-Index: 30

Lin Chen
Lin Chen

H-Index: 21

See List of Professors in chen lin University(Fudan University)