Minhyun Jung
KAIST
H-index: 14
Asia-South Korea
Top articles of Minhyun Jung
Monolithic Three-Dimensional Hafnia-based Artificial Nerve System
Nano Energy
2024/4/26
Novel strategies for low-voltage NAND flash memory with negative capacitance effect
Japanese Journal of Applied Physics
2024/4/16
Taeho Kim
H-Index: 4
Sangho Lee
H-Index: 3
Minhyun Jung
H-Index: 6
Jinho Ahn
H-Index: 14
Sanghun Jeon
H-Index: 30
Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film
Advanced Electronic Materials
2024/2
Minhyun Jung
H-Index: 6
Hye Jin Kim
H-Index: 5
Yunjeong Kim
H-Index: 2
Jinho Ahn
H-Index: 14
Sanghun Jeon
H-Index: 30
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
ACS Applied Materials & Interfaces
2023/10/24
Minhyun Jung
H-Index: 6
Sanghun Jeon
H-Index: 30
High Pressure Microwave Annealing Effect on Electrical Properties of HfxZr1–xO Films near Morphotropic Phase Boundary
ACS Applied Electronic Materials
2023/8/28
Minhyun Jung
H-Index: 6
Sanghun Jeon
H-Index: 30
Power-delay area-efficient processing-in-memory based on nanocrystalline Hafnia ferroelectric field-effect transistors
ACS Applied Materials & Interfaces
2022/12/28
Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices
2022/12/3
Minhyun Jung
H-Index: 6
Taeho Kim
H-Index: 4
Sangho Lee
H-Index: 3
Minki Kim
H-Index: 5
Sanghun Jeon
H-Index: 30
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
2022/10/1
Minhyun Jung
H-Index: 6
Sanghun Jeon
H-Index: 30
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High …
ACS Applied Materials & Interfaces
2022/9/15
Wearable pressure sensor based on solution-coated fabric for pulse detection
2022/7/10
Minhyun Jung
H-Index: 6
Sanghun Jeon
H-Index: 30
Flexible and stretchable conductive fabric for temperature detection
2022/7/10
Minhyun Jung
H-Index: 6
Sanghun Jeon
H-Index: 30
Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process
IEEE Transactions on Electron Devices
2022/4/25
Novel Approach to High κ (∼ 59) and Low EOT (∼ 3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO₂/HZO) Bilayer Heterostructures and High-Pressure Annealing
2022
Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and …
ACS APPLIED MATERIALS & INTERFACES
2022
High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory
Journal of Materials Chemistry C
2022
Sangho Lee
H-Index: 3
Taeho Kim
H-Index: 4
Minhyun Jung
H-Index: 6
Myounggon Kang
H-Index: 16
Sanghun Jeon
H-Index: 30
Flexible ferroelectric hafnia-based synaptic transistor by focused-microwave annealing
ACS Applied Materials & Interfaces
2021/12/20
High performance and self-rectifying hafnia-based ferroelectric tunnel junction for neuromorphic computing and TCAM applications
2021/12/11
Youngin Goh
H-Index: 7
Minki Kim
H-Index: 5
Minhyun Jung
H-Index: 6
Seong-Ook Jung
H-Index: 20
Sanghun Jeon
H-Index: 30
Selector-less ferroelectric tunnel junctions by stress engineering and an imprinting effect for high-density cross-point synapse arrays
ACS Applied Materials & Interfaces
2021/12/2
Youngin Goh
H-Index: 7
Minki Kim
H-Index: 5
Yongsun Lee
H-Index: 1
Minhyun Jung
H-Index: 6
Sanghun Jeon
H-Index: 30
Stretchable substrate structure and the manufacturing method thereof, stretchable display and the manufacturing method thereof, and operating method of stretchable display
2021/10/12
Electrode or wiring comprising amorphous metal layer, flexible display device comprising the same and manufacturing method thereof
2021/8/10
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