Taeho Kim
KAIST
H-index: 15
Asia-South Korea
Top articles of Taeho Kim
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
Novel strategies for low-voltage NAND flash memory with negative capacitance effect | Japanese Journal of Applied Physics | Giuk Kim Taeho Kim Sangho Lee Junghyeon Hwang Minhyun Jung | 2024/4/16 |
Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same | 2023/12/21 | ||
The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications | Advanced Functional Materials | Taeho Kim Giuk Kim Young Kyu Lee Dong Han Ko Junghyeon Hwang | 2023/2 |
Effect of annealing temperature on minimum domain size of ferroelectric hafnia | ACS Applied Electronic Materials | Seokjung Yun Hoon Kim Myungsoo Seo Min-Ho Kang Taeho Kim | 2023 |
Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process | IEEE Transactions on Electron Devices | Junghyeon Hwang Minki Kim Minhyun Jung Taeho Kim Youngin Goh | 2022/4/25 |
Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices | Giuk Kim Hunbeom Shin Taehyong Eom Minhyun Jung Taeho Kim | 2022/12/3 | |
High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory | Journal of Materials Chemistry C | Giuk Kim Sangho Lee Taehyong Eom Taeho Kim Minhyun Jung | 2022 |
Effect of floating gate insertion on the analog states of ferroelectric field-effect transistors | IEEE Transactions on Electron Devices | Sangho Lee Youngkyu Lee Giuk Kim Taeho Kim Taehyong Eom | 2022/11/29 |
Steep-slope transistor with an imprinted antiferroelectric film | ACS Applied Materials & Interfaces | Sangho Lee Yongsun Lee Taeho Kim Giuk Kim Taehyong Eom | 2022/11/17 |
Vertical‐Pillar Ferroelectric Field‐Effect‐Transistor Memory | physica status solidi (RRL)–Rapid Research Letters | Sangho Lee Giuk Kim Taeho Kim Taehyong Eom Sanghun Jeon | 2022/10 |
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High … | ACS Applied Materials & Interfaces | Venkateswarlu Gaddam Giuk Kim Taeho Kim Minhyun Jung Chaeheon Kim | 2022/9/15 |
Power-delay area-efficient processing-in-memory based on nanocrystalline Hafnia ferroelectric field-effect transistors | ACS Applied Materials & Interfaces | Giuk Kim Dong Han Ko Taeho Kim Sangho Lee Minhyun Jung | 2022/12/28 |
Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H2O2 Oxidant | physica status solidi (RRL)–Rapid Research Letters | Hyoungkyu Kim Seokjung Yun Tae Ho Kim Hoon Kim Changdeuck Bae | 2021/5 |
High‐Performance and High‐Endurance HfO2‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel | physica status solidi (RRL)–Rapid Research Letters | Taeho Kim Junghyeon Hwang Giuk Kim Minhyun Jung Sanghun Jeon | 2021/5 |
Interfacial Dipole Modulation Device with SiOX Switching Species | IEEE Journal of the Electron Devices Society | Giuk Kim Taeho Kim Sanghun Jeon | 2020/11/24 |
Effect of Additional Annealing on Ferroelectric Hafnium | Myung Soo Seo Min Ho Kang Tae Ho Kim Young In Goh Sang Hun Jeon | 2020/1/19 | |
Evolution of crystallographic structure and ferroelectricity of Hf0. 5Zr0. 5O2 films with different deposition rate | AIP Advances | Taeho Kim Minho An Sanghun Jeon | 2020/1/1 |
Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0. 5Zr0. 5O2 bilayer system | Solid-State Electronics | Dipjyoti Das Taeho Kim Venkateswarlu Gaddam Changhwan Shin Sanghun Jeon | 2020/12/1 |
