Taeho Kim

Taeho Kim

KAIST

H-index: 15

Asia-South Korea

About Taeho Kim

Taeho Kim, With an exceptional h-index of 15 and a recent h-index of 12 (since 2020), a distinguished researcher at KAIST, specializes in the field of FeRAM, Ferroelectric, Negative Capacitance, NCFET, TFT.

His recent articles reflect a diverse array of research interests and contributions to the field:

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same

The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications

Effect of annealing temperature on minimum domain size of ferroelectric hafnia

Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process

Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

Effect of floating gate insertion on the analog states of ferroelectric field-effect transistors

Taeho Kim Information

University

KAIST

Position

Ph. D. candidate at

Citations(all)

739

Citations(since 2020)

581

Cited By

420

hIndex(all)

15

hIndex(since 2020)

12

i10Index(all)

20

i10Index(since 2020)

14

Email

University Profile Page

KAIST

Taeho Kim Skills & Research Interests

FeRAM

Ferroelectric

Negative Capacitance

NCFET

TFT

Top articles of Taeho Kim

Title

Journal

Author(s)

Publication Date

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Japanese Journal of Applied Physics

Giuk Kim

Taeho Kim

Sangho Lee

Junghyeon Hwang

Minhyun Jung

...

2024/4/16

Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same

2023/12/21

The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications

Advanced Functional Materials

Taeho Kim

Giuk Kim

Young Kyu Lee

Dong Han Ko

Junghyeon Hwang

...

2023/2

Effect of annealing temperature on minimum domain size of ferroelectric hafnia

ACS Applied Electronic Materials

Seokjung Yun

Hoon Kim

Myungsoo Seo

Min-Ho Kang

Taeho Kim

...

2023

Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process

IEEE Transactions on Electron Devices

Junghyeon Hwang

Minki Kim

Minhyun Jung

Taeho Kim

Youngin Goh

...

2022/4/25

Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices

Giuk Kim

Hunbeom Shin

Taehyong Eom

Minhyun Jung

Taeho Kim

...

2022/12/3

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

Journal of Materials Chemistry C

Giuk Kim

Sangho Lee

Taehyong Eom

Taeho Kim

Minhyun Jung

...

2022

Effect of floating gate insertion on the analog states of ferroelectric field-effect transistors

IEEE Transactions on Electron Devices

Sangho Lee

Youngkyu Lee

Giuk Kim

Taeho Kim

Taehyong Eom

...

2022/11/29

Steep-slope transistor with an imprinted antiferroelectric film

ACS Applied Materials & Interfaces

Sangho Lee

Yongsun Lee

Taeho Kim

Giuk Kim

Taehyong Eom

...

2022/11/17

Vertical‐Pillar Ferroelectric Field‐Effect‐Transistor Memory

physica status solidi (RRL)–Rapid Research Letters

Sangho Lee

Giuk Kim

Taeho Kim

Taehyong Eom

Sanghun Jeon

2022/10

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High …

ACS Applied Materials & Interfaces

Venkateswarlu Gaddam

Giuk Kim

Taeho Kim

Minhyun Jung

Chaeheon Kim

...

2022/9/15

Power-delay area-efficient processing-in-memory based on nanocrystalline Hafnia ferroelectric field-effect transistors

ACS Applied Materials & Interfaces

Giuk Kim

Dong Han Ko

Taeho Kim

Sangho Lee

Minhyun Jung

...

2022/12/28

Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H2O2 Oxidant

physica status solidi (RRL)–Rapid Research Letters

Hyoungkyu Kim

Seokjung Yun

Tae Ho Kim

Hoon Kim

Changdeuck Bae

...

2021/5

High‐Performance and High‐Endurance HfO2‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel

physica status solidi (RRL)–Rapid Research Letters

Taeho Kim

Junghyeon Hwang

Giuk Kim

Minhyun Jung

Sanghun Jeon

2021/5

Interfacial Dipole Modulation Device with SiOX Switching Species

IEEE Journal of the Electron Devices Society

Giuk Kim

Taeho Kim

Sanghun Jeon

2020/11/24

Effect of Additional Annealing on Ferroelectric Hafnium

Myung Soo Seo

Min Ho Kang

Tae Ho Kim

Young In Goh

Sang Hun Jeon

...

2020/1/19

Evolution of crystallographic structure and ferroelectricity of Hf0. 5Zr0. 5O2 films with different deposition rate

AIP Advances

Taeho Kim

Minho An

Sanghun Jeon

2020/1/1

Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0. 5Zr0. 5O2 bilayer system

Solid-State Electronics

Dipjyoti Das

Taeho Kim

Venkateswarlu Gaddam

Changhwan Shin

Sanghun Jeon

2020/12/1

See List of Professors in Taeho Kim University(KAIST)

Taeho Kim FAQs

What is Taeho Kim's h-index at KAIST?

The h-index of Taeho Kim has been 12 since 2020 and 15 in total.

What are Taeho Kim's top articles?

The articles with the titles of

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same

The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications

Effect of annealing temperature on minimum domain size of ferroelectric hafnia

Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process

Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

Effect of floating gate insertion on the analog states of ferroelectric field-effect transistors

...

are the top articles of Taeho Kim at KAIST.

What are Taeho Kim's research interests?

The research interests of Taeho Kim are: FeRAM, Ferroelectric, Negative Capacitance, NCFET, TFT

What is Taeho Kim's total number of citations?

Taeho Kim has 739 citations in total.