Myounggon Kang
Korea National University of Transportation
H-index: 24
Asia-South Korea
Top articles of Myounggon Kang
Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings
Electronics
2024/4/20
Myounggon Kang
H-Index: 16
Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices
Micromachines
2024/3/27
Myounggon Kang
H-Index: 16
Jongwook Jeon
H-Index: 9
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications
Electronics
2024/2/26
Myounggon Kang
H-Index: 16
Yuri Kim
H-Index: 12
An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications
Electronics
2024/1/22
Jin-Seong Park
H-Index: 40
Myounggon Kang
H-Index: 16
The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory
Electronics
2024/1/11
Myounggon Kang
H-Index: 16
Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor
AIP Advances
2023/4/1
Myounggon Kang
H-Index: 16
Jongwook Jeon
H-Index: 9
Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system
Materials Science in Semiconductor Processing
2023/4/1
Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory
Applied Sciences
2023/3/7
Jihwan Lee
H-Index: 7
Myounggon Kang
H-Index: 16
Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time
Applied Sciences
2023/2/24
Myounggon Kang
H-Index: 16
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors
Materials
2023/2/17
Myounggon Kang
H-Index: 16
Sungjun Kim
H-Index: 18
Mimicking biological synapses with a-HfSiO
2023
Selective Erase Operation for Multiple Strings of 3D Ferroelectric (Fe)-NAND Flash Memory
IEEE Electron Device Letters
2023/12/28
Myounggon Kang
H-Index: 16
Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process
Nanomaterials
2023/10/28
Myounggon Kang
H-Index: 16
Sungjun Kim
H-Index: 18
Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing
ACS Materials Letters
2023/10/23
Circuit simulation of floating-gate FET (FGFET) for logic application
2023/10/20
Jongwook Jeon
H-Index: 9
Myounggon Kang
H-Index: 16
Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
Journal of Alloys and Compounds
2023/10/15
Investigation on floating-gate field-effect transistor for logic-in-memory application
Journal of Physics D: Applied Physics
2023/9/21
Myounggon Kang
H-Index: 16
Jongwook Jeon
H-Index: 9
SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
Nanomaterials
2023/9/21
Analysis of Logic-in-Memory Full Adder Circuit with Floating Gate Field Effect Transistor (FGFET)
IEEE Access
2023/8/31
Myounggon Kang
H-Index: 16
Jongwook Jeon
H-Index: 9
Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications
Nano Convergence
2023/7/10
