Myounggon Kang

About Myounggon Kang

Myounggon Kang, With an exceptional h-index of 24 and a recent h-index of 18 (since 2020), a distinguished researcher at Korea National University of Transportation, specializes in the field of Semiconductor Device.

His recent articles reflect a diverse array of research interests and contributions to the field:

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications

The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory

Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings

Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices

Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory

Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications

Circuit simulation of floating-gate FET (FGFET) for logic application

Myounggon Kang Information

University

Position

Department of Electronics Engineering Professor

Citations(all)

2638

Citations(since 2020)

1624

Cited By

1628

hIndex(all)

24

hIndex(since 2020)

18

i10Index(all)

65

i10Index(since 2020)

45

Email

University Profile Page

Korea National University of Transportation

Google Scholar

View Google Scholar Profile

Myounggon Kang Skills & Research Interests

Semiconductor Device

Top articles of Myounggon Kang

Title

Journal

Author(s)

Publication Date

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

Electronics

Seonjun Choi

Myounggon Kang

Hong-sik Jung

Yuri Kim

Yun-heub Song

2024/2/26

An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications

Electronics

Seonjun Choi

Jin-Seong Park

Myounggon Kang

Hong-sik Jung

Yun-heub Song

2024/1/22

The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory

Electronics

Myeongsang Yun

Gyuhyeon Lee

Gyunseok Ryu

Hyoungsoo Kim

Myounggon Kang

2024/1/11

Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings

Electronics

Taeyoung Cho

Sungyeop Jung

Myounggon Kang

2024/4/20

Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices

Micromachines

Sangki Cho

Sueyeon Kim

Myounggon Kang

Seungjae Baik

Jongwook Jeon

2024/3/27

Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory

Applied Sciences

Gyunseok Ryu

Hyunju Kim

Jihwan Lee

Myounggon Kang

2023/3/7

Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications

Nano Convergence

Muhammad Ismail

Maria Rasheed

Chandreswar Mahata

Myounggon Kang

Sungjun Kim

2023/7/10

Circuit simulation of floating-gate FET (FGFET) for logic application

Yunjae Kim

Hyoungsoo Kim

Jongwook Jeon

Seungjae Baik

Myounggon Kang

2023/10/20

Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time

Applied Sciences

Taeyoung Cho

Hyunju Kim

Myounggon Kang

2023/2/24

An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied

Electronics

Seonjun Choi

Myounggon Kang

Yun-Heub Song

2023/7/4

Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation

Journal of Alloys and Compounds

Muhammad Ismail

Maria Rasheed

Chandreswar Mahata

Myounggon Kang

Sungjun Kim

2023/10/15

Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors

Materials

Youngboo Cho

Jihyung Kim

Myounggon Kang

Sungjun Kim

2023/2/17

Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing

Ceramics International

Muhammad Ismail

Chandreswar Mahata

Myounggon Kang

Sungjun Kim

2023/6/1

Investigation on floating-gate field-effect transistor for logic-in-memory application

Journal of Physics D: Applied Physics

Sueyeon Kim

Sangki Cho

Insoo Choi

Myounggon Kang

Seungjae Baik

...

2023/9/21

Selective Erase Operation for Multiple Strings of 3D Ferroelectric (Fe)-NAND Flash Memory

IEEE Electron Device Letters

Gyunseok Ryu

Myounggon Kang

2023/12/28

Mimicking biological synapses with a-HfSiO

Muhammad Ismail

Maria Rasheed

Chandreswar Mahata

Myounggon Kang

Sungjun Kim

2023

Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor

AIP Advances

Sangki Cho

Sueyeon Kim

Insoo Choi

Myounggon Kang

Seungjae Baik

...

2023/4/1

SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing

Nanomaterials

Muhammad Ismail

Chandreswar Mahata

Myounggon Kang

Sungjun Kim

2023/9/21

Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process

Nanomaterials

Minkang Kim

Dongyeol Ju

Myounggon Kang

Sungjun Kim

2023/10/28

Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system

Materials Science in Semiconductor Processing

Chaeun Kim

Yunseok Lee

Sunghun Kim

Myounggon Kang

Sungjun Kim

2023/4/1

See List of Professors in Myounggon Kang University(Korea National University of Transportation)