Andreas Rosenauer
Universität Bremen
H-index: 56
Europe-Germany
Top articles of Andreas Rosenauer
Tuning the Morphology and Chemical Distribution of Ag Atoms in Au rich Nanoparticles using Electrochemical Dealloying
Nanoscale
2024
Andreas Rosenauer
H-Index: 32
Erratum:“Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy”[APL Mater. 11, 111113 (2023)]
APL Materials
2024/1/1
Characterization of mixing in nanoparticle hetero‐aggregates by convolutional neural networks
Nano Select
2024
Lutz Mädler
H-Index: 45
Andreas Rosenauer
H-Index: 32
Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1− x) 2O3 on m-plane α-Al2O3 by molecular beam epitaxy
APL Materials
2024/1/1
Manuel Alonso-Orts
H-Index: 4
Debdeep Jena
H-Index: 63
Andreas Rosenauer
H-Index: 32
Martin Eickhoff
H-Index: 31
Patrick Vogt
H-Index: 12
Using convolutional neural networks for stereological characterization of 3D hetero-aggregates based on synthetic STEM data
Machine Learning: Science and Technology
2023/10/27
Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2
2D Materials
2024/3/19
Christian Petersen
H-Index: 15
Thomas Schmidt
H-Index: 4
Jens Falta
H-Index: 14
Andreas Rosenauer
H-Index: 32
Martin Eickhoff
H-Index: 31
GaN atomic electric fields from a segmented STEM detector: Experiment and simulation
Journal of Microscopy
2024/2/19
Andreas Rosenauer
H-Index: 32
Atom counting based on Voronoi averaged STEM intensities using a crosstalk correction scheme
Ultramicroscopy
2024/2/1
Andreas Rosenauer
H-Index: 32
Growth and characterization of sputter-deposited Ga2O3-based memristive devices
Applied Physics Letters
2023/11/20
Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
APL Materials
2023/11/1
New Perspectives for Evaluating the Mass Transport in Porous Catalysts and Unfolding Macro-and Microkinetics
Catalysis Letters
2023/11
Sputter-Deposited β-Ga₂O₃ Films With Al Top Electrodes for Resistive Random Access Memory Technology*
2023/10/22
Nucleation Window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3 (vol 23, pg 4435, 2023)
Crystal Growth & Design
2023/5/23
Correction to “Nucleation Window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3”
Crystal Growth & Design
2023/10/19
Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy
APL Materials
2023/9/1
Material Discrimination in Nanoparticle Hetero‐Aggregates by Analysis of Scanning Transmission Electron Microscopy Images
Particle & Particle Systems Characterization
2023/9
Lutz Mädler
H-Index: 45
Andreas Rosenauer
H-Index: 32
Flame Aerosol Synthesis of Metal Sulfides at High Temperature in Oxygen‐Lean Atmosphere (Adv. Mater. 28/2023)
Advanced Materials
2023/7
Nanoporous gold: From structure evolution to functional properties in catalysis and electrochemistry
2023/5/3
Systematic errors of electric field measurements in ferroelectrics by unit cell averaged momentum transfers in STEM
Microscopy and Microanalysis
2023/4/1
Mauricio Cattaneo
H-Index: 6
Andreas Rosenauer
H-Index: 32
Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices
Discover Nano
2023/3/1
Co-Authors
