Anchal Agarwal

About Anchal Agarwal

Anchal Agarwal, With an exceptional h-index of 16 and a recent h-index of 13 (since 2020), a distinguished researcher at University of California, Santa Barbara, specializes in the field of III-V, Design of Experiments, Device Physics, Solid State Electronics, MOCVD.

His recent articles reflect a diverse array of research interests and contributions to the field:

Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers

Electro-thermal investigation of GaN vertical trench MOSFETs

Anchal Agarwal Information

University

Position

___

Citations(all)

1010

Citations(since 2020)

738

Cited By

515

hIndex(all)

16

hIndex(since 2020)

13

i10Index(all)

22

i10Index(since 2020)

18

Email

University Profile Page

Google Scholar

Anchal Agarwal Skills & Research Interests

III-V

Design of Experiments

Device Physics

Solid State Electronics

MOCVD

Top articles of Anchal Agarwal

Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers

2023/2/21

Electro-thermal investigation of GaN vertical trench MOSFETs

IEEE Electron Device Letters

2021/3/10

See List of Professors in Anchal Agarwal University(University of California, Santa Barbara)

Co-Authors

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