Srabanti Chowdhury
Stanford University
H-index: 36
North America-United States
Top articles of Srabanti Chowdhury
Title | Journal | Author(s) | Publication Date |
|---|---|---|---|
10 MHz-Switching on GaN Trench CAVET up to 300° C Operation Enabled by High Channel Mobility | IEEE Electron Device Letters | Xinyi Wen Bhawani Shankar Kwangjae Lee Hayao Kasai Maliha Noshin | 2024/1/31 |
From Wide to Ultrawide-Bandgap Semiconductors for High Power and High Frequency Electronic Devices | Kelly Woo Zhengliang Bian Maliha Noshin Rafael Perez Martinez Mohamadali Malakoutian | 2024/1/23 | |
Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN | Nanotechnology | Kwang Jae Lee Yusuke Nakazato Jaeyi Chun Xinyi Wen Chuanzhe Meng | 2022/10/4 |
Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs | IEEE Transactions on Microwave Theory and Techniques | Rafael Perez Martinez Masaya Iwamoto Jianjun Xu Chad Gillease Steven Cochran | 2024/1/10 |
Semiconductor apparatuses and methods involving diamond and GaN-based FET structures | 2024/4/16 | ||
Control of Schottky barrier height in diamond using UV-generated ozone and its effect on barrier inhomogeneity and temperature dependent properties | Diamond and Related Materials | Kelly Woo Mohamadali Malakoutian Devansh Saraswat Zhengliang Bian Aaron Hardy | 2024/4/3 |
Development of 300–400° C grown diamond for semiconductor devices thermal management | MRS Advances | Mohamadali Malakoutian Rohith Soman Kelly Woo Srabanti Chowdhury | 2024/2 |
Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution | Yuke Cao James W Pomeroy Jingshan Wang Patrick Fay Bhawani Shankar | 2023/3/15 | |
Overview of wide/ultra-wide bandgap power semiconductor devices for distributed energy resources | IEEE Journal of Emerging and Selected Topics in Power Electronics | Sudip K Mazumder Lars F Voss Karen Dowling Adam Conway David Hall | 2023/5/19 |
On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials | Mohamadali Malakoutian Srabanti Chowdhury | 2023/10/16 | |
Demonstration of Millimeter-Wave GaN IMPATT Oscillator at Ka-band | Z Bian A Marshall C Pao T Lee S Chowdhury | 2023/12/9 | |
On uniform avalanche in III-nitrides and its application | Bhawani Shankar Ke Zeng Srabanti Chowdhury | 2023/3/15 | |
High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion | Crystals | Xinyi Wen Kwang Jae Lee Yusuke Nakazato Jaeyi Chun Srabanti Chowdhury | 2023/4/21 |
Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors | Applied Physics Letter | Maliha Noshin Xinyi Wen Rohith Soman Xiaoqing Xu Srabanti Chowdhury | 2023/8/8 |
Interlayer Engineering to Achieve <1 m2K/GW Thermal Boundary Resistances to Diamond for Effective Device Cooling | K Woo M Malakoutian Y Jo X Zheng T Pfeifer | 2023/12/9 | |
Methods and apparatuses involving diamond growth on gan | 2023/2/2 | ||
Compound Semiconductors. | Grace Xing Zetian Mi Srabanti Chowdhury | 2023/4 | |
Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits | Dennis Rich Anna Kasperovich Mohamadali Malakoutian Robert M Radway Shiho Hagiwara | 2023/7/9 | |
Thermal dissipation in stacked devices | WY Woon Sam Vaziri CC Shih I Datye M Malakoutian | 2023/12/9 | |
(Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices | Luke Yates Andrew T Binder Anthony Rice Andrew M Armstrong Jeffrey Steinfeldt | 2023/12/22 |
Co-Authors
